JP4752214B2 - エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 - Google Patents

エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 Download PDF

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JP4752214B2
JP4752214B2 JP2004241269A JP2004241269A JP4752214B2 JP 4752214 B2 JP4752214 B2 JP 4752214B2 JP 2004241269 A JP2004241269 A JP 2004241269A JP 2004241269 A JP2004241269 A JP 2004241269A JP 4752214 B2 JP4752214 B2 JP 4752214B2
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aln crystal
aln
crystal
epitaxial layer
layer
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JP2006060074A (ja
JP2006060074A5 (enExample
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恵二 石橋
隆幸 西浦
智喜 上村
倫正 宮永
伸介 藤原
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Sumitomo Electric Industries Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2004241269A 2004-08-20 2004-08-20 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 Expired - Fee Related JP4752214B2 (ja)

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JP2010275693A Division JP2011049610A (ja) 2010-12-10 2010-12-10 ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108381379A (zh) * 2018-04-13 2018-08-10 中国电子科技集团公司第四十六研究所 氮化铝单晶片电解抛光及化学机械抛光相结合的抛光方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101081485A (zh) * 2006-05-31 2007-12-05 住友电气工业株式会社 表面处理方法、氮化物晶体衬底、半导体器件和制造方法
JP2008010835A (ja) 2006-05-31 2008-01-17 Sumitomo Electric Ind Ltd 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法
US7585772B2 (en) 2006-07-26 2009-09-08 Freiberger Compound Materials Gmbh Process for smoothening III-N substrates
EP3157045B1 (de) * 2006-07-26 2021-09-08 Freiberger Compound Materials GmbH Geglättete iii-n-substrate
US8283694B2 (en) 2006-10-19 2012-10-09 Sumitomo Electric Industries, Ltd. GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device
WO2008047627A1 (en) * 2006-10-19 2008-04-24 Sumitomo Electric Industries, Ltd. Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element
US20100062601A1 (en) * 2006-11-15 2010-03-11 Cabot Microelectronics Corporation Methods for polishing aluminum nitride
JP5231449B2 (ja) * 2006-12-28 2013-07-10 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 平滑なウェハの製造方法
JP2009263534A (ja) * 2008-04-25 2009-11-12 Yushiro Chem Ind Co Ltd 砥粒分散媒、スラリー組成物、脆性材料の研磨方法およびサファイア基板の製造方法
JP2012248594A (ja) * 2011-05-26 2012-12-13 Kyushu Institute Of Technology 研磨剤
JP6078864B2 (ja) * 2011-11-01 2017-02-15 株式会社クリスタル光学 研磨材
WO2013133198A1 (ja) * 2012-03-05 2013-09-12 株式会社 フジミインコーポレーテッド 研磨用組成物、及び当該研磨用組成物を用いた化合物半導体基板の製造方法
JP5988480B2 (ja) * 2012-06-05 2016-09-07 株式会社フジクラ 研磨方法
JP5990444B2 (ja) * 2012-11-01 2016-09-14 昭和電工株式会社 炭化珪素半導体装置の製造方法
JP6861063B2 (ja) * 2017-03-23 2021-04-21 山口精研工業株式会社 窒化アルミニウム多結晶基板用研磨剤組成物および窒化アルミニウム多結晶基板の研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3606015B2 (ja) * 1997-07-23 2005-01-05 豊田合成株式会社 ３族窒化物半導体素子の製造方法
JP2002176198A (ja) * 2000-12-11 2002-06-21 Mitsubishi Cable Ind Ltd 多波長発光素子
JP2002184726A (ja) * 2000-12-19 2002-06-28 Okamoto Machine Tool Works Ltd 硬脆材料基板用研磨剤
DE60230538D1 (de) * 2001-11-20 2009-02-05 Rensselaer Polytech Inst Verfahren zum polieren der oberfläche eines substrats
US20060183625A1 (en) * 2002-07-09 2006-08-17 Kenichiro Miyahara Substrate for forming thin film, thin film substrate, optical wave guide, luminescent element and substrate for carrying luminescent element
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108381379A (zh) * 2018-04-13 2018-08-10 中国电子科技集团公司第四十六研究所 氮化铝单晶片电解抛光及化学机械抛光相结合的抛光方法
CN108381379B (zh) * 2018-04-13 2019-05-24 中国电子科技集团公司第四十六研究所 氮化铝单晶片电解抛光及化学机械抛光相结合的抛光方法

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