JP2006060074A5 - - Google Patents
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- JP2006060074A5 JP2006060074A5 JP2004241269A JP2004241269A JP2006060074A5 JP 2006060074 A5 JP2006060074 A5 JP 2006060074A5 JP 2004241269 A JP2004241269 A JP 2004241269A JP 2004241269 A JP2004241269 A JP 2004241269A JP 2006060074 A5 JP2006060074 A5 JP 2006060074A5
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004241269A JP4752214B2 (ja) | 2004-08-20 | 2004-08-20 | エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004241269A JP4752214B2 (ja) | 2004-08-20 | 2004-08-20 | エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010275693A Division JP2011049610A (ja) | 2010-12-10 | 2010-12-10 | ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006060074A JP2006060074A (ja) | 2006-03-02 |
| JP2006060074A5 true JP2006060074A5 (enExample) | 2007-08-09 |
| JP4752214B2 JP4752214B2 (ja) | 2011-08-17 |
Family
ID=36107280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004241269A Expired - Fee Related JP4752214B2 (ja) | 2004-08-20 | 2004-08-20 | エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4752214B2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101081485A (zh) * | 2006-05-31 | 2007-12-05 | 住友电气工业株式会社 | 表面处理方法、氮化物晶体衬底、半导体器件和制造方法 |
| JP2008010835A (ja) | 2006-05-31 | 2008-01-17 | Sumitomo Electric Ind Ltd | 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法 |
| US7585772B2 (en) | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
| EP3157045B1 (de) * | 2006-07-26 | 2021-09-08 | Freiberger Compound Materials GmbH | Geglättete iii-n-substrate |
| US8283694B2 (en) | 2006-10-19 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device |
| WO2008047627A1 (en) * | 2006-10-19 | 2008-04-24 | Sumitomo Electric Industries, Ltd. | Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element |
| US20100062601A1 (en) * | 2006-11-15 | 2010-03-11 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
| JP5231449B2 (ja) * | 2006-12-28 | 2013-07-10 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 平滑なウェハの製造方法 |
| JP2009263534A (ja) * | 2008-04-25 | 2009-11-12 | Yushiro Chem Ind Co Ltd | 砥粒分散媒、スラリー組成物、脆性材料の研磨方法およびサファイア基板の製造方法 |
| JP2012248594A (ja) * | 2011-05-26 | 2012-12-13 | Kyushu Institute Of Technology | 研磨剤 |
| JP6078864B2 (ja) * | 2011-11-01 | 2017-02-15 | 株式会社クリスタル光学 | 研磨材 |
| WO2013133198A1 (ja) * | 2012-03-05 | 2013-09-12 | 株式会社 フジミインコーポレーテッド | 研磨用組成物、及び当該研磨用組成物を用いた化合物半導体基板の製造方法 |
| JP5988480B2 (ja) * | 2012-06-05 | 2016-09-07 | 株式会社フジクラ | 研磨方法 |
| JP5990444B2 (ja) * | 2012-11-01 | 2016-09-14 | 昭和電工株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6861063B2 (ja) * | 2017-03-23 | 2021-04-21 | 山口精研工業株式会社 | 窒化アルミニウム多結晶基板用研磨剤組成物および窒化アルミニウム多結晶基板の研磨方法 |
| CN108381379B (zh) * | 2018-04-13 | 2019-05-24 | 中国电子科技集团公司第四十六研究所 | 氮化铝单晶片电解抛光及化学机械抛光相结合的抛光方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3606015B2 (ja) * | 1997-07-23 | 2005-01-05 | 豊田合成株式会社 | ３族窒化物半導体素子の製造方法 |
| JP2002176198A (ja) * | 2000-12-11 | 2002-06-21 | Mitsubishi Cable Ind Ltd | 多波長発光素子 |
| JP2002184726A (ja) * | 2000-12-19 | 2002-06-28 | Okamoto Machine Tool Works Ltd | 硬脆材料基板用研磨剤 |
| DE60230538D1 (de) * | 2001-11-20 | 2009-02-05 | Rensselaer Polytech Inst | Verfahren zum polieren der oberfläche eines substrats |
| US20060183625A1 (en) * | 2002-07-09 | 2006-08-17 | Kenichiro Miyahara | Substrate for forming thin film, thin film substrate, optical wave guide, luminescent element and substrate for carrying luminescent element |
| FR2843061B1 (fr) * | 2002-08-02 | 2004-09-24 | Soitec Silicon On Insulator | Procede de polissage de tranche de materiau |
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2004
- 2004-08-20 JP JP2004241269A patent/JP4752214B2/ja not_active Expired - Fee Related