JP4743983B2 - 電荷結合イメージセンサ装置 - Google Patents

電荷結合イメージセンサ装置 Download PDF

Info

Publication number
JP4743983B2
JP4743983B2 JP2001081327A JP2001081327A JP4743983B2 JP 4743983 B2 JP4743983 B2 JP 4743983B2 JP 2001081327 A JP2001081327 A JP 2001081327A JP 2001081327 A JP2001081327 A JP 2001081327A JP 4743983 B2 JP4743983 B2 JP 4743983B2
Authority
JP
Japan
Prior art keywords
charge
image sensor
phase
sensor device
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001081327A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001326344A (ja
JP2001326344A5 (enExample
Inventor
ゴードン スティーブンス エリック
エフ デジャルダン ウィリアム
Original Assignee
イーストマン コダック カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2001326344A publication Critical patent/JP2001326344A/ja
Publication of JP2001326344A5 publication Critical patent/JP2001326344A5/ja
Application granted granted Critical
Publication of JP4743983B2 publication Critical patent/JP4743983B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1536—Frame transfer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
JP2001081327A 2000-03-22 2001-03-21 電荷結合イメージセンサ装置 Expired - Lifetime JP4743983B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/533051 2000-03-22
US09/533,051 US6693671B1 (en) 2000-03-22 2000-03-22 Fast-dump structure for full-frame image sensors with lod antiblooming structures

Publications (3)

Publication Number Publication Date
JP2001326344A JP2001326344A (ja) 2001-11-22
JP2001326344A5 JP2001326344A5 (enExample) 2008-04-24
JP4743983B2 true JP4743983B2 (ja) 2011-08-10

Family

ID=24124256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001081327A Expired - Lifetime JP4743983B2 (ja) 2000-03-22 2001-03-21 電荷結合イメージセンサ装置

Country Status (4)

Country Link
US (1) US6693671B1 (enExample)
EP (1) EP1137071B1 (enExample)
JP (1) JP4743983B2 (enExample)
DE (1) DE60142943D1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001238134A (ja) * 2000-02-23 2001-08-31 Sony Corp 固体撮像素子およびその駆動方法並びにカメラシステム
US6995795B1 (en) 2000-09-12 2006-02-07 Eastman Kodak Company Method for reducing dark current
US20050068441A1 (en) * 2003-09-26 2005-03-31 Eastman Kodak Company Multiple output CCD for color imaging
US7492404B2 (en) 2004-08-27 2009-02-17 Eastman Kodak Company Fast flush structure for solid-state image sensors
US20080007622A1 (en) * 2006-06-08 2008-01-10 Eastman Kodak Company Method of improving solid-state image sensor sensitivity
JP2009177018A (ja) * 2008-01-25 2009-08-06 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US8134630B2 (en) * 2008-05-09 2012-03-13 Truesense Imaging, Inc. System and method for draining residual charge from charge-coupled device (CCD) shift registers in image sensors having reset drains
US8329499B2 (en) * 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
JP5300577B2 (ja) * 2009-04-23 2013-09-25 三菱電機株式会社 Ｔｄｉ方式のイメージセンサ、及び該イメージセンサの駆動方法
US8800130B2 (en) 2011-05-25 2014-08-12 Truesense Imaging, Inc. Methods for producing image sensors having multi-purpose architecture
US8773563B2 (en) 2011-05-25 2014-07-08 Truesense Imaging, Inc. Multi-purpose architecture for CCD image sensors
US9049353B2 (en) 2011-09-28 2015-06-02 Semiconductor Components Industries, Llc Time-delay-and-integrate image sensors having variable integration times
CN105611197B (zh) * 2015-12-23 2018-08-17 中国科学院长春光学精密机械与物理研究所 无抗溢出功能帧转移ccd的抗饱和读出方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817788A (ja) * 1981-07-23 1983-02-02 Toshiba Corp 固体撮像装置
US4528596A (en) * 1982-11-30 1985-07-09 Rca Corporation Suppression of edge effects arising in CCD imager field registers
US4611140A (en) 1985-08-26 1986-09-09 The United States Of America As Represented By The Secretary Of The Navy Saw-CTD parallel to serial imager
KR900007234B1 (ko) * 1986-07-07 1990-10-05 가부시기가이샤 히다찌세이사구쇼 전하이송형 고체촬상소자
US4972254A (en) * 1987-02-24 1990-11-20 Kabushiki Kaisha Toshiba Solid state image sensors for reproducing high definition images
US5121214A (en) 1990-06-29 1992-06-09 The United States Of America As Represented By The United States Department Of Energy Method for eliminating artifacts in CCD imagers
US5130774A (en) * 1990-07-12 1992-07-14 Eastman Kodak Company Antiblooming structure for solid-state image sensor
AU1995092A (en) 1991-05-10 1992-12-30 Q-Dot. Inc. High-speed peristaltic ccd imager with gaas fet output
US5355165A (en) 1992-08-06 1994-10-11 Princeton Scientific Instruments, Inc. Very high frame rate CCD imager
US5343297A (en) 1992-09-17 1994-08-30 General Electric Company Charge amplifier with precise, integer gain
US5440343A (en) 1994-02-28 1995-08-08 Eastman Kodak Company Motion/still electronic image sensing apparatus
US5668597A (en) 1994-12-30 1997-09-16 Eastman Kodak Company Electronic camera with rapid automatic focus of an image upon a progressive scan image sensor
DE69632172T2 (de) * 1995-02-21 2005-04-21 Dalsa Corp Ladungsgekoppelte bildaufnahmeanordnung
JP3590944B2 (ja) * 1996-02-23 2004-11-17 日本テキサス・インスツルメンツ株式会社 電荷結合型半導体装置
JP3750221B2 (ja) * 1996-10-01 2006-03-01 ソニー株式会社 固体撮像装置
JP2894323B2 (ja) * 1997-06-23 1999-05-24 日本電気株式会社 固体撮像装置およびその製造方法
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JP2000134540A (ja) * 1998-10-29 2000-05-12 Nec Corp 固体撮像装置及びその駆動方法

Also Published As

Publication number Publication date
JP2001326344A (ja) 2001-11-22
EP1137071A2 (en) 2001-09-26
DE60142943D1 (de) 2010-10-14
EP1137071A3 (en) 2005-09-14
EP1137071B1 (en) 2010-09-01
US6693671B1 (en) 2004-02-17

Similar Documents

Publication Publication Date Title
JP4743983B2 (ja) 電荷結合イメージセンサ装置
US10043837B2 (en) Image sensor
JPS62265759A (ja) 固体撮像素子
EP0455801A1 (en) Image sensor
CN102623479B (zh) 电荷积分多线性图像传感器
US5402459A (en) Frame transfer image sensor with electronic shutter
JPH04337670A (ja) Ｃｃｄシフトレジスタ
KR19980064279A (ko) 수직 오버플로우 드레인 및 저항성 게이트 전하 전송소자를 가지는 고체촬상소자 및 그 제어방법
EP2249390B1 (en) Solid-state imaging device
KR101159032B1 (ko) 고체 촬상 소자
JP2845216B2 (ja) 固体撮像装置およびその製造方法
JP3317248B2 (ja) 固体撮像装置
JP2699841B2 (ja) 固体撮像装置
JPH04315473A (ja) 固体撮像素子
JP2877047B2 (ja) 固体撮像装置
JP4178638B2 (ja) 固体撮像素子及びその駆動方法
JP4686830B2 (ja) 固体撮像素子及びその駆動方法
EP1417829B1 (en) Image recording device with improved image storage transition
JP2864626B2 (ja) 固体撮像装置
KR19980039142A (ko) 고체 촬상 소자
JPH03116841A (ja) 電荷結合素子
JPH0436469B2 (enExample)
JP2747328B2 (ja) 電荷転送素子
JP2848257B2 (ja) 電荷転送型固体撮像装置の撮像部とその駆動方法
JPH03102984A (ja) 固体撮像装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080310

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080310

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080310

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110419

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110421

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110510

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4743983

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term