JP4728402B2 - 支持体から物質を除去する方法 - Google Patents

支持体から物質を除去する方法 Download PDF

Info

Publication number
JP4728402B2
JP4728402B2 JP2008542435A JP2008542435A JP4728402B2 JP 4728402 B2 JP4728402 B2 JP 4728402B2 JP 2008542435 A JP2008542435 A JP 2008542435A JP 2008542435 A JP2008542435 A JP 2008542435A JP 4728402 B2 JP4728402 B2 JP 4728402B2
Authority
JP
Japan
Prior art keywords
sulfuric acid
acid composition
water vapor
liquid
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008542435A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009517865A (ja
JP2009517865A5 (enExample
Inventor
カール クリステンソン，カート
ジェイ． ヘインスタッド，ロナルド
アン リューサー，パトリシア
ジェイ． ワーゲナー，トーマス
Original Assignee
エフエスアイ インターナショナル インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エフエスアイ インターナショナル インコーポレーテッド filed Critical エフエスアイ インターナショナル インコーポレーテッド
Publication of JP2009517865A publication Critical patent/JP2009517865A/ja
Publication of JP2009517865A5 publication Critical patent/JP2009517865A5/ja
Application granted granted Critical
Publication of JP4728402B2 publication Critical patent/JP4728402B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
    • B05B7/02—Spray pistols; Apparatus for discharge
    • B05B7/12—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages
    • B05B7/1209—Spray pistols; Apparatus for discharge designed to control volume of flow, e.g. with adjustable passages the controlling means for each liquid or other fluent material being manual and interdependent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2230/00—Other cleaning aspects applicable to all B08B range
    • B08B2230/01—Cleaning with steam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2008542435A 2005-11-23 2006-11-22 支持体から物質を除去する方法 Active JP4728402B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US73972705P 2005-11-23 2005-11-23
US60/739,727 2005-11-23
PCT/US2006/045190 WO2007062111A1 (en) 2005-11-23 2006-11-22 Process for removing material from substrates

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010020903A Division JP2010157749A (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法
JP2010020904A Division JP4965673B2 (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法

Publications (3)

Publication Number Publication Date
JP2009517865A JP2009517865A (ja) 2009-04-30
JP2009517865A5 JP2009517865A5 (enExample) 2010-03-25
JP4728402B2 true JP4728402B2 (ja) 2011-07-20

Family

ID=37951429

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2008542435A Active JP4728402B2 (ja) 2005-11-23 2006-11-22 支持体から物質を除去する方法
JP2010020904A Active JP4965673B2 (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法
JP2010020903A Withdrawn JP2010157749A (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法
JP2011268220A Pending JP2012069994A (ja) 2005-11-23 2011-12-07 支持体から物質を除去する方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2010020904A Active JP4965673B2 (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法
JP2010020903A Withdrawn JP2010157749A (ja) 2005-11-23 2010-02-02 支持体から物質を除去する方法
JP2011268220A Pending JP2012069994A (ja) 2005-11-23 2011-12-07 支持体から物質を除去する方法

Country Status (6)

Country Link
US (3) US7592264B2 (enExample)
JP (4) JP4728402B2 (enExample)
KR (2) KR20080071988A (enExample)
CN (2) CN101900956A (enExample)
TW (1) TWI406110B (enExample)
WO (1) WO2007062111A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060997A (ko) 2016-09-30 2019-06-04 도오꾜오까고오교 가부시끼가이샤 세정 조성물, 세정 방법, 및 반도체의 제조 방법

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672487B2 (ja) * 2005-08-26 2011-04-20 大日本スクリーン製造株式会社 レジスト除去方法およびレジスト除去装置
JP4728402B2 (ja) 2005-11-23 2011-07-20 エフエスアイ インターナショナル インコーポレーテッド 支持体から物質を除去する方法
US7727900B2 (en) * 2006-02-21 2010-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Surface preparation for gate oxide formation that avoids chemical oxide formation
EP1950326A1 (en) * 2007-01-29 2008-07-30 Interuniversitair Microelektronica Centrum Method for removal of bulk metal contamination from III-V semiconductor substrates
JP5173500B2 (ja) * 2008-03-11 2013-04-03 大日本スクリーン製造株式会社 処理液供給装置およびそれを備えた基板処理装置
US8142571B2 (en) * 2008-05-15 2012-03-27 Fsi International, Inc. Process for treatment of semiconductor wafer using water vapor containing environment
JP5330793B2 (ja) * 2008-10-21 2013-10-30 東京エレクトロン株式会社 基板処理装置及び基板処理方法
KR101421752B1 (ko) * 2008-10-21 2014-07-22 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
US20100124410A1 (en) * 2008-11-18 2010-05-20 Fsi International, Inc. System for supplying water vapor in semiconductor wafer treatment
KR101294462B1 (ko) * 2008-12-30 2013-08-07 에이펫(주) 기판처리장치
US8216384B2 (en) * 2009-01-15 2012-07-10 Intermolecular, Inc. Combinatorial approach to the development of cleaning formulations for wet removal of high dose implant photoresist
US8053301B2 (en) * 2009-03-30 2011-11-08 International Business Machines Corporation CMOS SiGe channel pFET and Si channel nFET devices with minimal STI recess
JP5745913B2 (ja) * 2010-07-12 2015-07-08 富士フイルム株式会社 放射線画像検出装置
US8709165B2 (en) 2010-12-03 2014-04-29 Lam Research Ag Method and apparatus for surface treatment using inorganic acid and ozone
CN110189995A (zh) 2010-12-10 2019-08-30 东京毅力科创Fsi公司 用于从衬底选择性地移除氮化物的方法
JP5280473B2 (ja) * 2011-03-03 2013-09-04 東京エレクトロン株式会社 エッチング方法、エッチング装置および記憶媒体
JP2013004614A (ja) * 2011-06-14 2013-01-07 Toshiba Corp 塗布膜形成方法及び塗布膜形成装置
US9412628B2 (en) 2011-06-30 2016-08-09 Tel Fsi, Inc. Acid treatment strategies useful to fabricate microelectronic devices and precursors thereof
CN102923936B (zh) * 2011-08-11 2014-12-10 富泰华工业（深圳）有限公司 蚀刻装置
JP5837787B2 (ja) * 2011-09-28 2015-12-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TWI444234B (zh) * 2011-10-07 2014-07-11 Univ Chang Gung Dye adsorption system
US8664014B2 (en) 2011-11-17 2014-03-04 Intermolecular, Inc. High productivity combinatorial workflow for photoresist strip applications
US8940103B2 (en) 2012-03-06 2015-01-27 Tokyo Electron Limited Sequential stage mixing for single substrate strip processing
US9075318B2 (en) 2012-03-07 2015-07-07 Tokyo Electron Limited Sequential stage mixing for a resist batch strip process
JP5832397B2 (ja) 2012-06-22 2015-12-16 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US9875916B2 (en) 2012-07-09 2018-01-23 Tokyo Electron Limited Method of stripping photoresist on a single substrate system
JP6168271B2 (ja) * 2012-08-08 2017-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN102799083A (zh) * 2012-08-29 2012-11-28 上海宏力半导体制造有限公司 光刻胶去除系统以及光刻设备
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
US9513556B2 (en) * 2012-11-19 2016-12-06 Tokyo Electron Limited Method and system of process chemical temperature control using an injection nozzle
TWI526257B (zh) 2012-11-27 2016-03-21 東京威力科創股份有限公司 使用噴嘴清洗基板上之一層的控制
US9017568B2 (en) 2013-01-22 2015-04-28 Tel Fsi, Inc. Process for increasing the hydrophilicity of silicon surfaces following HF treatment
US8871108B2 (en) * 2013-01-22 2014-10-28 Tel Fsi, Inc. Process for removing carbon material from substrates
JP6148475B2 (ja) * 2013-01-25 2017-06-14 株式会社東芝 半導体製造装置および半導体装置の製造方法
CN103286091B (zh) * 2013-06-09 2017-09-19 京东方科技集团股份有限公司 一种基板的清洗方法
JP6204213B2 (ja) * 2014-01-28 2017-09-27 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TWI629720B (zh) 2015-09-30 2018-07-11 東京威力科創股份有限公司 用於濕蝕刻製程之溫度的動態控制之方法及設備
US9768017B1 (en) 2016-03-15 2017-09-19 United Microelectronics Corporation Method of epitaxial structure formation in a semiconductor
US11355362B2 (en) * 2017-04-25 2022-06-07 Tokyo Ohka Kogyo Co., Ltd. Washing method, washing device, storage medium, and washing composition
CN109936924A (zh) * 2019-03-06 2019-06-25 信丰福昌发电子有限公司 一种hdi线路板蚀刻设备
CN110137111A (zh) * 2019-05-23 2019-08-16 德淮半导体有限公司 气体分配装置及其使用方法
CN111112237B (zh) * 2020-01-10 2025-04-15 广东利元亨智能装备股份有限公司 激光清洗设备
JP7713834B2 (ja) * 2020-10-09 2025-07-28 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7504018B2 (ja) * 2020-12-22 2024-06-21 東京エレクトロン株式会社 基板処理方法、及び基板処理装置
KR102444967B1 (ko) 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102465982B1 (ko) 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
CN116672104B (zh) * 2023-08-04 2023-12-26 山东第一医科大学附属省立医院(山东省立医院) 一种手足外科用手术器械清洗消毒装置

Family Cites Families (128)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US703216A (en) * 1902-03-10 1902-06-24 James W Rickey Water-wheel-penstock construction.
US5845846A (en) 1969-12-17 1998-12-08 Fujisaki Electric Co., Ltd. Spraying nozzle and method for ejecting liquid as fine particles
SU865975A1 (ru) * 1980-01-30 1981-09-23 Уральский научно-исследовательский институт трубной промышленности Способ травлени стальных изделий
JPS60177466A (ja) * 1984-02-22 1985-09-11 Sharp Corp フロツピ−・デイスク・ドライブ制御方式
US4727512A (en) * 1984-12-06 1988-02-23 Computer Design & Applications, Inc. Interface adaptor emulating magnetic tape drive
US4778536A (en) * 1985-06-13 1988-10-18 Purusar Corporation Sulfur trioxide vapor phase stripping
US5872669A (en) * 1988-03-01 1999-02-16 Seagate Technology, Inc. Disk drive apparatus with power conservation capability
US5438674A (en) * 1988-04-05 1995-08-01 Data/Ware Development, Inc. Optical disk system emulating magnetic tape units
US5235695A (en) * 1989-06-28 1993-08-10 International Business Machines Corporation Apparatus for efficient utilization of removable data recording media
JPH0338628A (ja) * 1989-07-05 1991-02-19 Fuji Photo Film Co Ltd カメラ及び写真プリント方法
JP3122819B2 (ja) * 1990-04-11 2001-01-09 ノードソン株式会社 ノズル孔より流出する液体又は溶融体をその周辺よりの気体噴出流により偏向分配する方法
US5037506A (en) * 1990-09-06 1991-08-06 Subhash Gupta Method of stripping layers of organic materials
US5274799A (en) * 1991-01-04 1993-12-28 Array Technology Corporation Storage device array architecture with copyback cache
US5297124A (en) * 1992-04-24 1994-03-22 Miltope Corporation Tape drive emulation system for a disk drive
JPH05304126A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からの有機物の気相除去方法並びに装置
JPH05304089A (ja) * 1992-04-28 1993-11-16 Dainippon Screen Mfg Co Ltd 基板表面からのレジストの除去方法並びに装置
US5485321A (en) * 1993-12-29 1996-01-16 Storage Technology Corporation Format and method for recording optimization
JP3377294B2 (ja) * 1994-06-03 2003-02-17 大日本スクリーン製造株式会社 基板表面処理方法及び装置
US5864346A (en) * 1994-09-12 1999-01-26 Nintendo Co., Ltd. Picture display unit and image display system
US5774292A (en) * 1995-04-13 1998-06-30 International Business Machines Corporation Disk drive power management system and method
KR0146076B1 (ko) * 1995-06-28 1998-08-01 문정환 반도체 소자의 기판 전압 레규레이터 장치
JP3690619B2 (ja) * 1996-01-12 2005-08-31 忠弘 大見 洗浄方法及び洗浄装置
US5785875A (en) * 1996-02-13 1998-07-28 Micron Technology, Inc. Photoresist removal process using heated solvent vapor
US5774715A (en) * 1996-03-27 1998-06-30 Sun Microsystems, Inc. File system level compression using holes
US5998305A (en) 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
US6408359B1 (en) * 1996-04-30 2002-06-18 Matsushita Electric Industrial Co., Ltd. Storage device management system and method for distributively storing data in a plurality of storage devices
WO1997050019A1 (en) * 1996-06-25 1997-12-31 Cfm Technologies, Inc. Improved method for sulfuric acid resist stripping
US6021408A (en) * 1996-09-12 2000-02-01 Veritas Software Corp. Methods for operating a log device
US5861064A (en) * 1997-03-17 1999-01-19 Fsi Int Inc Process for enhanced photoresist removal in conjunction with various methods and chemistries
WO1999052654A1 (en) * 1998-04-16 1999-10-21 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US20020157686A1 (en) * 1997-05-09 2002-10-31 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6869487B1 (en) * 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6098148A (en) * 1997-05-29 2000-08-01 International Business Machines Corporation Storage and access of data using volume trailer
US6041329A (en) * 1997-05-29 2000-03-21 International Business Machines Corporation Automated message processing system configured to automatically manage introduction of removable data storage media into media library
US6578120B1 (en) * 1997-06-24 2003-06-10 International Business Machines Corporation Synchronization and resynchronization of loosely-coupled copy operations between a primary and a remote secondary DASD volume under concurrent updating
US6389503B1 (en) * 1997-08-04 2002-05-14 Exabyte Corporation Tape drive emulation by removable disk drive and media formatted therefor
US6173359B1 (en) * 1997-08-27 2001-01-09 International Business Machines Corp. Storage and access to scratch mounts in VTS system
US5971368A (en) 1997-10-29 1999-10-26 Fsi International, Inc. System to increase the quantity of dissolved gas in a liquid and to maintain the increased quantity of dissolved gas in the liquid until utilized
US6044442A (en) * 1997-11-21 2000-03-28 International Business Machines Corporation External partitioning of an automated data storage library into multiple virtual libraries for access by a plurality of hosts
US6105037A (en) * 1997-12-12 2000-08-15 International Business Machines Corporation Apparatus for performing automated reconcile control in a virtual tape system
US6023709A (en) * 1997-12-15 2000-02-08 International Business Machines Corporation Automated file error classification and correction in a hierarchical storage management system
US6061309A (en) * 1997-12-17 2000-05-09 International Business Machines Corporation Method and apparatus for maintaining states of an operator panel and convenience input/output station of a dual library manager/dual accessor controller system in the event of a failure to one controller
US6029179A (en) * 1997-12-18 2000-02-22 International Business Machines Corporation Automated read-only volume processing in a virtual tape server
US6725331B1 (en) * 1998-01-07 2004-04-20 Emc Corporation Method and apparatus for managing the dynamic assignment resources in a data storage system
US6231775B1 (en) * 1998-01-28 2001-05-15 Anon, Inc. Process for ashing organic materials from substrates
US6146469A (en) 1998-02-25 2000-11-14 Gamma Precision Technology Apparatus and method for cleaning semiconductor wafers
US6234641B1 (en) * 1998-02-27 2001-05-22 Kenneth R. Ungard Electroluminescent lamp kit
WO1999049998A1 (en) * 1998-03-30 1999-10-07 The Regents Of The University Of California Composition and method for removing photoresist materials from electronic components
US6070224A (en) * 1998-04-02 2000-05-30 Emc Corporation Virtual tape system
US6260110B1 (en) * 1998-04-02 2001-07-10 Emc Corporation Virtual tape system with variable size
US6269423B1 (en) * 1998-05-13 2001-07-31 International Business Machines Corporation Method and apparatus for providing improved caching for a virtual tape server
US6067587A (en) * 1998-06-17 2000-05-23 Sutmyn Storage Corporation Method for serializing and synchronizing data packets by utilizing a physical lock system and a control data structure for mutual exclusion lock
US20020095557A1 (en) * 1998-06-22 2002-07-18 Colin Constable Virtual data storage (VDS) system
JP3618552B2 (ja) * 1998-06-30 2005-02-09 富士通株式会社 記憶装置
US6353837B1 (en) * 1998-06-30 2002-03-05 Emc Corporation Method and apparatus providing mass storage access from systems using different meta-data formats
US6049848A (en) * 1998-07-15 2000-04-11 Sutmyn Storage Corporation System and method for performing high-speed tape positioning operations
US6195730B1 (en) * 1998-07-24 2001-02-27 Storage Technology Corporation Computer system with storage device mapping input/output processor
US6269431B1 (en) * 1998-08-13 2001-07-31 Emc Corporation Virtual storage and block level direct access of secondary storage for recovery of backup data
JP3507710B2 (ja) * 1998-09-11 2004-03-15 株式会社東芝 電気機器における電源回路
US6266784B1 (en) * 1998-09-15 2001-07-24 International Business Machines Corporation Direct storage of recovery plan file on remote server for disaster recovery and storage management thereof
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid
US6247096B1 (en) * 1998-11-02 2001-06-12 International Business Machines Corporation Handling eject requests of logical volumes in a data storage subsystem
US6354922B1 (en) 1999-08-20 2002-03-12 Ebara Corporation Polishing apparatus
US6336173B1 (en) * 1999-04-01 2002-01-01 International Business Machines Corporation Storing and tracking multiple copies of data in data storage libraries
US6406551B1 (en) * 1999-05-14 2002-06-18 Fsi International, Inc. Method for treating a substrate with heat sensitive agents
US6274506B1 (en) 1999-05-14 2001-08-14 Fsi International, Inc. Apparatus and method for dispensing processing fluid toward a substrate surface
US6360232B1 (en) * 1999-06-02 2002-03-19 International Business Machines Corporation Disaster recovery method for a removable media library
US6267301B1 (en) 1999-06-11 2001-07-31 Spraying Systems Co. Air atomizing nozzle assembly with improved air cap
JP3544329B2 (ja) * 1999-12-14 2004-07-21 東京エレクトロン株式会社 基板処理装置
US6336163B1 (en) * 1999-07-30 2002-01-01 International Business Machines Corporation Method and article of manufacture for inserting volumes for import into a virtual tape server
US6610168B1 (en) 1999-08-12 2003-08-26 Sipec Corporation Resist film removal apparatus and resist film removal method
US6689284B1 (en) * 1999-09-29 2004-02-10 Kabushiki Kaisha Toshiba Surface treating method
JP2001118820A (ja) * 1999-10-20 2001-04-27 Seiko Epson Corp 洗浄装置及び洗浄方法
US7203732B2 (en) * 1999-11-11 2007-04-10 Miralink Corporation Flexible remote data mirroring
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
US20020004835A1 (en) * 2000-06-02 2002-01-10 Inrange Technologies Corporation Message queue server system
US6766520B1 (en) * 2000-06-08 2004-07-20 Unisys Corporation Tape drive emulation software objects, and emulation of other peripheral systems for computers
US6418945B1 (en) * 2000-07-07 2002-07-16 Semitool, Inc. Dual cassette centrifugal processor
JP3344994B2 (ja) * 2000-08-22 2002-11-18 株式会社半導体先端テクノロジーズ レジスト剥離装置、及びレジスト剥離方法
JP2002074811A (ja) * 2000-08-30 2002-03-15 Nec Corp 電源供給制御システム及び電源供給制御方法
US6694447B1 (en) * 2000-09-29 2004-02-17 Sun Microsystems, Inc. Apparatus and method for increasing application availability during a disaster fail-back
US6451118B1 (en) 2000-11-14 2002-09-17 Anon, Inc. Cluster tool architecture for sulfur trioxide processing
US6557089B1 (en) * 2000-11-28 2003-04-29 International Business Machines Corporation Backup by ID-suppressed instant virtual copy then physical backup copy with ID reintroduced
US20020083265A1 (en) * 2000-12-26 2002-06-27 Brough Farrell Lynn Methods for increasing cache capacity
JP4034519B2 (ja) * 2001-02-06 2008-01-16 株式会社東芝 ウェハ洗浄装置及びウェハ洗浄方法
US6584989B2 (en) * 2001-04-17 2003-07-01 International Business Machines Corporation Apparatus and method for wet cleaning
US6867148B2 (en) * 2001-05-16 2005-03-15 Micron Technology, Inc. Removal of organic material in integrated circuit fabrication using ozonated organic acid solutions
US6598805B2 (en) * 2001-05-30 2003-07-29 Dainippon Screen Mfg. Co., Ltd Substrate cleaning apparatus
US6915397B2 (en) * 2001-06-01 2005-07-05 Hewlett-Packard Development Company, L.P. System and method for generating point in time storage copy
US6745212B2 (en) * 2001-06-27 2004-06-01 International Business Machines Corporation Preferential caching of uncopied logical volumes in an IBM peer-to-peer virtual tape server
JP2003017455A (ja) * 2001-07-04 2003-01-17 Seiko Epson Corp 基材処理方法、基材処理装置及び電子デバイスの製造方法
US6625704B2 (en) * 2001-08-08 2003-09-23 Sangate Systems, Inc. Data backup method and system using snapshot and virtual tape
US6877016B1 (en) * 2001-09-13 2005-04-05 Unisys Corporation Method of capturing a physically consistent mirrored snapshot of an online database
US20030120676A1 (en) * 2001-12-21 2003-06-26 Sanrise Group, Inc. Methods and apparatus for pass-through data block movement with virtual storage appliances
US7139885B2 (en) * 2001-12-27 2006-11-21 Hitachi, Ltd. Method and apparatus for managing storage based replication
US20030135672A1 (en) * 2002-01-14 2003-07-17 Imation Corp. System having tape drive emulator and data cartridge carrying a non-tape storage medium
US20030190870A1 (en) * 2002-04-03 2003-10-09 Applied Materials, Inc. Cleaning ceramic surfaces
JP4038556B2 (ja) * 2002-04-16 2008-01-30 リアライズ・アドバンストテクノロジ株式会社 レジスト膜除去装置及びレジスト膜除去方法、並びに有機物除去装置及び有機物除去方法
US20040015731A1 (en) * 2002-07-16 2004-01-22 International Business Machines Corporation Intelligent data management fo hard disk drive
US20040098244A1 (en) * 2002-11-14 2004-05-20 Imation Corp. Method and system for emulating tape storage format using a non-tape storage medium
US6908565B2 (en) * 2002-12-24 2005-06-21 Intel Corporation Etch thinning techniques for wafer-to-wafer vertical stacks
CN1321755C (zh) * 2003-01-21 2007-06-20 友达光电股份有限公司 清洗硅表面的方法以及用此方法制造薄膜晶体管的方法
US7055009B2 (en) * 2003-03-21 2006-05-30 International Business Machines Corporation Method, system, and program for establishing and maintaining a point-in-time copy
US20050010529A1 (en) * 2003-07-08 2005-01-13 Zalewski Stephen H. Method and apparatus for building a complete data protection scheme
US7953819B2 (en) * 2003-08-22 2011-05-31 Emc Corporation Multi-protocol sharable virtual storage objects
US7904428B2 (en) * 2003-09-23 2011-03-08 Symantec Corporation Methods and apparatus for recording write requests directed to a data store
US7991748B2 (en) * 2003-09-23 2011-08-02 Symantec Corporation Virtual data store creation and use
US7631120B2 (en) * 2004-08-24 2009-12-08 Symantec Operating Corporation Methods and apparatus for optimally selecting a storage buffer for the storage of data
US7409587B2 (en) * 2004-08-24 2008-08-05 Symantec Operating Corporation Recovering from storage transaction failures using checkpoints
US7239581B2 (en) * 2004-08-24 2007-07-03 Symantec Operating Corporation Systems and methods for synchronizing the internal clocks of a plurality of processor modules
US7287133B2 (en) * 2004-08-24 2007-10-23 Symantec Operating Corporation Systems and methods for providing a modification history for a location within a data store
US7827362B2 (en) * 2004-08-24 2010-11-02 Symantec Corporation Systems, apparatus, and methods for processing I/O requests
US7577807B2 (en) * 2003-09-23 2009-08-18 Symantec Operating Corporation Methods and devices for restoring a portion of a data store
US7730222B2 (en) * 2004-08-24 2010-06-01 Symantec Operating System Processing storage-related I/O requests using binary tree data structures
US7725760B2 (en) * 2003-09-23 2010-05-25 Symantec Operating Corporation Data storage system
US7296008B2 (en) * 2004-08-24 2007-11-13 Symantec Operating Corporation Generation and use of a time map for accessing a prior image of a storage device
US7577806B2 (en) * 2003-09-23 2009-08-18 Symantec Operating Corporation Systems and methods for time dependent data storage and recovery
JP4453323B2 (ja) * 2003-10-02 2010-04-21 株式会社日立製作所 複製データの管理方法、装置、及びプログラム
JP4191009B2 (ja) * 2003-11-05 2008-12-03 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
KR20050068063A (ko) 2003-12-29 2005-07-05 삼성전자주식회사 회전가능한 건조가스 노즐들을 갖는 린스/건조 장비 및이를 사용하여 반도체 웨이퍼들을 린스/건조시키는 방법
US7139887B2 (en) * 2003-12-31 2006-11-21 Veritas Operating Corporation Coordinated storage management operations in replication environment
JP2005243814A (ja) * 2004-02-25 2005-09-08 Dainippon Screen Mfg Co Ltd 基板処理装置
US7422031B2 (en) 2004-03-12 2008-09-09 Fsi International, Inc. Rotary unions, fluid delivery systems, and related methods
JP4439956B2 (ja) 2004-03-16 2010-03-24 ソニー株式会社 レジスト剥離方法およびレジスト剥離装置
US7761284B2 (en) * 2004-08-30 2010-07-20 Overland Storage, Inc. Tape emulating disk based storage system and method with automatically resized emulated tape capacity
JP4728402B2 (ja) 2005-11-23 2011-07-20 エフエスアイ インターナショナル インコーポレーテッド 支持体から物質を除去する方法
US20070227556A1 (en) 2006-04-04 2007-10-04 Bergman Eric J Methods for removing photoresist
JP5199339B2 (ja) * 2007-05-18 2013-05-15 ティーイーエル エフエスアイ，インコーポレイティド 水蒸気または蒸気を用いた基板の処理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060997A (ko) 2016-09-30 2019-06-04 도오꾜오까고오교 가부시끼가이샤 세정 조성물, 세정 방법, 및 반도체의 제조 방법
US11441101B2 (en) 2016-09-30 2022-09-13 Tokyo Ohka Kogyo Co., Ltd. Cleaning composition, cleaning method, and method for manufacturing semiconductor

Also Published As

Publication number Publication date
JP2009517865A (ja) 2009-04-30
US7592264B2 (en) 2009-09-22
US20130115782A1 (en) 2013-05-09
TWI406110B (zh) 2013-08-21
JP2012069994A (ja) 2012-04-05
CN101900956A (zh) 2010-12-01
CN101312794A (zh) 2008-11-26
TW200731029A (en) 2007-08-16
WO2007062111A1 (en) 2007-05-31
JP2010157749A (ja) 2010-07-15
KR20090130197A (ko) 2009-12-18
JP2010147493A (ja) 2010-07-01
CN101312794B (zh) 2012-07-04
JP4965673B2 (ja) 2012-07-04
KR20080071988A (ko) 2008-08-05
US20070161248A1 (en) 2007-07-12
US8394228B2 (en) 2013-03-12
US8859435B2 (en) 2014-10-14
US20100018951A1 (en) 2010-01-28

Similar Documents

Publication Publication Date Title
JP4728402B2 (ja) 支持体から物質を除去する方法
KR102156457B1 (ko) 기판으로부터 탄소 재료를 제거하기 위한 프로세스
JP5249462B2 (ja) 水蒸気または蒸気を用いた基板の処理方法
US9059104B2 (en) Process for selectively removing nitride from substrates
US6558477B1 (en) Removal of photoresist through the use of hot deionized water bath, water vapor and ozone gas
JPH05152203A (ja) 基板処理方法および処理装置
JPH0626206B2 (ja) 基板より気相法で膜除去する方法及び装置
JP2006108304A (ja) 基板処理装置
US7527698B2 (en) Method and apparatus for removing a liquid from a surface of a substrate

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090909

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090909

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100202

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100331

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100818

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101026

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110315

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110414

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4728402

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140422

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250