JP4718677B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP4718677B2
JP4718677B2 JP2000370873A JP2000370873A JP4718677B2 JP 4718677 B2 JP4718677 B2 JP 4718677B2 JP 2000370873 A JP2000370873 A JP 2000370873A JP 2000370873 A JP2000370873 A JP 2000370873A JP 4718677 B2 JP4718677 B2 JP 4718677B2
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Japan
Prior art keywords
signal line
circuit
insulating film
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000370873A
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English (en)
Japanese (ja)
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JP2002176139A (ja
JP2002176139A5 (enExample
Inventor
智史 村上
洋介 塚本
知昭 熱海
真之 坂倉
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000370873A priority Critical patent/JP4718677B2/ja
Priority to US10/006,043 priority patent/US7067845B2/en
Priority to EP01129016.0A priority patent/EP1213763B1/en
Priority to CNB011427450A priority patent/CN1322543C/zh
Publication of JP2002176139A publication Critical patent/JP2002176139A/ja
Priority to US11/276,105 priority patent/US7314774B2/en
Priority to US11/957,641 priority patent/US7791079B2/en
Publication of JP2002176139A5 publication Critical patent/JP2002176139A5/ja
Priority to US12/822,260 priority patent/US8143627B2/en
Application granted granted Critical
Publication of JP4718677B2 publication Critical patent/JP4718677B2/ja
Priority to US13/426,650 priority patent/US8536581B2/en
Priority to US14/026,369 priority patent/US8963161B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2000370873A 2000-12-06 2000-12-06 半導体装置及びその作製方法 Expired - Lifetime JP4718677B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2000370873A JP4718677B2 (ja) 2000-12-06 2000-12-06 半導体装置及びその作製方法
US10/006,043 US7067845B2 (en) 2000-12-06 2001-12-04 Semiconductor device and method of manufacturing the same
EP01129016.0A EP1213763B1 (en) 2000-12-06 2001-12-06 Display device and method of manufacturing the same
CNB011427450A CN1322543C (zh) 2000-12-06 2001-12-06 半导体器件及其制造方法
US11/276,105 US7314774B2 (en) 2000-12-06 2006-02-14 Semiconductor device and method of manufacturing the same
US11/957,641 US7791079B2 (en) 2000-12-06 2007-12-17 Semiconductor device and method of manufacturing the same
US12/822,260 US8143627B2 (en) 2000-12-06 2010-06-24 Semiconductor device
US13/426,650 US8536581B2 (en) 2000-12-06 2012-03-22 Semiconductor device and method of manufacturing the same
US14/026,369 US8963161B2 (en) 2000-12-06 2013-09-13 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000370873A JP4718677B2 (ja) 2000-12-06 2000-12-06 半導体装置及びその作製方法

Publications (3)

Publication Number Publication Date
JP2002176139A JP2002176139A (ja) 2002-06-21
JP2002176139A5 JP2002176139A5 (enExample) 2008-01-24
JP4718677B2 true JP4718677B2 (ja) 2011-07-06

Family

ID=18840682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000370873A Expired - Lifetime JP4718677B2 (ja) 2000-12-06 2000-12-06 半導体装置及びその作製方法

Country Status (4)

Country Link
US (6) US7067845B2 (enExample)
EP (1) EP1213763B1 (enExample)
JP (1) JP4718677B2 (enExample)
CN (1) CN1322543C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150053154A (ko) * 2013-11-07 2015-05-15 엘지디스플레이 주식회사 표시패널용 어레이 기판 및 그 제조방법

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JP4718677B2 (ja) * 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US6686605B2 (en) * 2001-07-27 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and method of manufacturing the same
US7592980B2 (en) 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100870013B1 (ko) * 2002-08-27 2008-11-21 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
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JP4574130B2 (ja) * 2003-06-18 2010-11-04 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
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JP4207858B2 (ja) 2004-07-05 2009-01-14 セイコーエプソン株式会社 半導体装置、表示装置及び電子機器
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TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
CN101517629B (zh) * 2006-09-26 2012-02-08 夏普株式会社 有源矩阵基板
KR101316791B1 (ko) * 2007-01-05 2013-10-11 삼성디스플레이 주식회사 게이트 구동회로 및 이를 포함하는 액정 표시 장치, 박막트랜지스터 기판의 제조 방법
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JP5409024B2 (ja) * 2008-02-15 2014-02-05 株式会社半導体エネルギー研究所 表示装置
JP5388632B2 (ja) 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8224277B2 (en) * 2008-09-26 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
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CN103676382B (zh) * 2013-12-26 2017-03-08 京东方科技集团股份有限公司 阵列基板及显示装置
TWI555150B (zh) * 2014-05-27 2016-10-21 財團法人工業技術研究院 電子元件及其製法
CN104317089B (zh) * 2014-10-27 2017-02-01 合肥鑫晟光电科技有限公司 一种阵列基板及其制备方法、显示面板、显示装置
CN104882414B (zh) * 2015-05-06 2018-07-10 深圳市华星光电技术有限公司 Tft基板的制作方法及其结构
CN105679764B (zh) * 2016-01-07 2019-02-19 武汉华星光电技术有限公司 Tft基板的制作方法
KR102480898B1 (ko) * 2018-01-05 2022-12-26 삼성디스플레이 주식회사 표시 장치
CN109256035B (zh) * 2018-09-14 2021-03-02 Oppo（重庆）智能科技有限公司 显示屏、显示屏的制造方法及电子设备
CN109449168B (zh) * 2018-11-14 2021-05-18 合肥京东方光电科技有限公司 导线结构及其制造方法、阵列基板和显示装置
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KR20150053154A (ko) * 2013-11-07 2015-05-15 엘지디스플레이 주식회사 표시패널용 어레이 기판 및 그 제조방법
KR102089074B1 (ko) * 2013-11-07 2020-03-13 엘지디스플레이 주식회사 표시패널용 어레이 기판 및 그 제조방법

Also Published As

Publication number Publication date
JP2002176139A (ja) 2002-06-21
US20100258811A1 (en) 2010-10-14
US8963161B2 (en) 2015-02-24
US7314774B2 (en) 2008-01-01
CN1359139A (zh) 2002-07-17
US7067845B2 (en) 2006-06-27
US8143627B2 (en) 2012-03-27
US20020068388A1 (en) 2002-06-06
US20140014964A1 (en) 2014-01-16
EP1213763A3 (en) 2011-03-30
US20120235153A1 (en) 2012-09-20
EP1213763B1 (en) 2016-08-17
EP1213763A2 (en) 2002-06-12
US20060121652A1 (en) 2006-06-08
US7791079B2 (en) 2010-09-07
US8536581B2 (en) 2013-09-17
US20080164478A1 (en) 2008-07-10
CN1322543C (zh) 2007-06-20

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