JP4703433B2 - 光起電力装置 - Google Patents

光起電力装置 Download PDF

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Publication number
JP4703433B2
JP4703433B2 JP2006050523A JP2006050523A JP4703433B2 JP 4703433 B2 JP4703433 B2 JP 4703433B2 JP 2006050523 A JP2006050523 A JP 2006050523A JP 2006050523 A JP2006050523 A JP 2006050523A JP 4703433 B2 JP4703433 B2 JP 4703433B2
Authority
JP
Japan
Prior art keywords
electrode
photoelectric conversion
groove
intermediate layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006050523A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007234626A5 (enExample
JP2007234626A (ja
Inventor
亘 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2006050523A priority Critical patent/JP4703433B2/ja
Priority to TW096100150A priority patent/TW200737534A/zh
Priority to EP07250674A priority patent/EP1826828A3/en
Priority to US11/708,050 priority patent/US8115094B2/en
Priority to KR1020070019451A priority patent/KR101020922B1/ko
Priority to CN2007100848148A priority patent/CN101030589B/zh
Publication of JP2007234626A publication Critical patent/JP2007234626A/ja
Publication of JP2007234626A5 publication Critical patent/JP2007234626A5/ja
Application granted granted Critical
Publication of JP4703433B2 publication Critical patent/JP4703433B2/ja
Priority to US13/371,852 priority patent/US20120138131A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2006050523A 2006-02-27 2006-02-27 光起電力装置 Expired - Fee Related JP4703433B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006050523A JP4703433B2 (ja) 2006-02-27 2006-02-27 光起電力装置
TW096100150A TW200737534A (en) 2006-02-27 2007-01-03 Photovoltaic power device
EP07250674A EP1826828A3 (en) 2006-02-27 2007-02-19 Photovoltaic apparatus
US11/708,050 US8115094B2 (en) 2006-02-27 2007-02-20 Photovoltaic apparatus
KR1020070019451A KR101020922B1 (ko) 2006-02-27 2007-02-27 광 기전력 장치
CN2007100848148A CN101030589B (zh) 2006-02-27 2007-02-27 光生伏打装置
US13/371,852 US20120138131A1 (en) 2006-02-27 2012-02-13 Photovoltaic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006050523A JP4703433B2 (ja) 2006-02-27 2006-02-27 光起電力装置

Publications (3)

Publication Number Publication Date
JP2007234626A JP2007234626A (ja) 2007-09-13
JP2007234626A5 JP2007234626A5 (enExample) 2011-02-03
JP4703433B2 true JP4703433B2 (ja) 2011-06-15

Family

ID=38121648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006050523A Expired - Fee Related JP4703433B2 (ja) 2006-02-27 2006-02-27 光起電力装置

Country Status (6)

Country Link
US (2) US8115094B2 (enExample)
EP (1) EP1826828A3 (enExample)
JP (1) JP4703433B2 (enExample)
KR (1) KR101020922B1 (enExample)
CN (1) CN101030589B (enExample)
TW (1) TW200737534A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5160565B2 (ja) * 2007-12-05 2013-03-13 株式会社カネカ 集積型薄膜光電変換装置とその製造方法
JP4966848B2 (ja) * 2007-12-27 2012-07-04 三洋電機株式会社 太陽電池モジュール及び太陽電池モジュールの製造方法
CN202217689U (zh) * 2008-04-18 2012-05-09 欧瑞康太阳能股份公司(特吕巴赫) 光伏器件以及包括其的光伏转换器面板
JPWO2009139390A1 (ja) * 2008-05-15 2011-09-22 株式会社アルバック 薄膜太陽電池モジュール及びその製造方法
WO2011000814A2 (de) * 2009-06-29 2011-01-06 Reis Gmbh & Co. Kg Maschinenfabrik Verfahren zum freilegen eines elektrischen kontakts
US8846434B2 (en) * 2009-09-18 2014-09-30 Tel Solar Ag High efficiency micromorph tandem cells
KR20120003213A (ko) * 2010-07-02 2012-01-10 삼성전자주식회사 태양 전지 모듈 및 그 제조 방법
KR101283163B1 (ko) 2011-01-24 2013-07-05 엘지이노텍 주식회사 태양전지 및 그의 제조방법
KR101189432B1 (ko) 2011-01-25 2012-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20120086447A (ko) * 2011-01-26 2012-08-03 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR20130109330A (ko) * 2012-03-27 2013-10-08 엘지이노텍 주식회사 태양전지 및 이의 제조 방법
DE102012111895A1 (de) * 2012-12-06 2014-06-12 Lpkf Laser & Electronics Ag Verfahren zur Herstellung eines Solarmoduls
US9954126B2 (en) * 2013-03-14 2018-04-24 Q1 Nanosystems Corporation Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture
KR101976131B1 (ko) * 2019-01-10 2019-05-07 한국기계연구원 에너지 변환 장치 및 그 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
JPH07114292B2 (ja) * 1986-12-22 1995-12-06 鐘淵化学工業株式会社 半導体装置及びその製法
JP2915321B2 (ja) * 1995-05-16 1999-07-05 キヤノン株式会社 直列接続光起電力素子アレーの製造方法
JP2001274430A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換装置
JP2002118273A (ja) 2000-10-05 2002-04-19 Kanegafuchi Chem Ind Co Ltd 集積型ハイブリッド薄膜光電変換装置
US6632993B2 (en) * 2000-10-05 2003-10-14 Kaneka Corporation Photovoltaic module
JP2002261308A (ja) 2001-03-01 2002-09-13 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュール
JP2002261309A (ja) * 2001-03-01 2002-09-13 Kanegafuchi Chem Ind Co Ltd 薄膜光電変換モジュールの製造方法
JP4579436B2 (ja) * 2001-03-05 2010-11-10 株式会社カネカ 薄膜光電変換モジュール
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2003298090A (ja) 2002-04-03 2003-10-17 Sharp Corp 太陽電池素子およびその製造方法
JP4173692B2 (ja) * 2002-06-03 2008-10-29 シャープ株式会社 太陽電池素子およびその製造方法
JP4365636B2 (ja) * 2003-07-15 2009-11-18 京セラ株式会社 集積型光電変換装置
JP2005093939A (ja) * 2003-09-19 2005-04-07 Mitsubishi Heavy Ind Ltd 集積型タンデム接合太陽電池及び集積型タンデム接合太陽電池の製造方法
JP2006013403A (ja) 2004-06-29 2006-01-12 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール、その製造方法およびその修復方法
JP4340246B2 (ja) * 2005-03-07 2009-10-07 シャープ株式会社 薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
CN101030589A (zh) 2007-09-05
EP1826828A3 (en) 2010-05-26
US20070200192A1 (en) 2007-08-30
US20120138131A1 (en) 2012-06-07
US8115094B2 (en) 2012-02-14
TW200737534A (en) 2007-10-01
JP2007234626A (ja) 2007-09-13
CN101030589B (zh) 2010-10-06
EP1826828A2 (en) 2007-08-29
KR101020922B1 (ko) 2011-03-09
KR20070089086A (ko) 2007-08-30

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