JP4701030B2 - 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム - Google Patents

露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム Download PDF

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Publication number
JP4701030B2
JP4701030B2 JP2005212254A JP2005212254A JP4701030B2 JP 4701030 B2 JP4701030 B2 JP 4701030B2 JP 2005212254 A JP2005212254 A JP 2005212254A JP 2005212254 A JP2005212254 A JP 2005212254A JP 4701030 B2 JP4701030 B2 JP 4701030B2
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JP
Japan
Prior art keywords
optical system
polarization
exposure
pattern
reticle
Prior art date
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Expired - Fee Related
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JP2005212254A
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English (en)
Japanese (ja)
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JP2007035671A5 (OSRAM
JP2007035671A (ja
Inventor
和弘 高橋
晃司 三上
道生 河野
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005212254A priority Critical patent/JP4701030B2/ja
Priority to CN2006101059883A priority patent/CN1900828B/zh
Priority to KR1020060068255A priority patent/KR100871505B1/ko
Priority to US11/459,117 priority patent/US7864296B2/en
Priority to TW095126818A priority patent/TWI348596B/zh
Publication of JP2007035671A publication Critical patent/JP2007035671A/ja
Publication of JP2007035671A5 publication Critical patent/JP2007035671A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005212254A 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム Expired - Fee Related JP4701030B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005212254A JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム
CN2006101059883A CN1900828B (zh) 2005-07-22 2006-07-21 曝光装置、设定方法、曝光方法及器件制造方法
KR1020060068255A KR100871505B1 (ko) 2005-07-22 2006-07-21 노광장치 및 방법
US11/459,117 US7864296B2 (en) 2005-07-22 2006-07-21 Exposure apparatus, setting method, and exposure method having the same
TW095126818A TWI348596B (en) 2005-07-22 2006-07-21 Exposure apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005212254A JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Publications (3)

Publication Number Publication Date
JP2007035671A JP2007035671A (ja) 2007-02-08
JP2007035671A5 JP2007035671A5 (OSRAM) 2011-03-10
JP4701030B2 true JP4701030B2 (ja) 2011-06-15

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JP2005212254A Expired - Fee Related JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Country Status (5)

Country Link
US (1) US7864296B2 (OSRAM)
JP (1) JP4701030B2 (OSRAM)
KR (1) KR100871505B1 (OSRAM)
CN (1) CN1900828B (OSRAM)
TW (1) TWI348596B (OSRAM)

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JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
KR101758958B1 (ko) * 2011-02-28 2017-07-17 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
JP5168526B2 (ja) * 2011-05-10 2013-03-21 大日本印刷株式会社 投射型映像表示装置
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WO2014110299A1 (en) * 2013-01-10 2014-07-17 Xiaotian Steve Yao Non-interferometric optical gyroscope based on polarization sensing
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CN103926806B (zh) * 2014-05-05 2016-03-30 北京理工大学 一种实现光瞳偏振态任意分布的光刻照明系统设计方法
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KR102535147B1 (ko) * 2017-09-07 2023-05-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 장치
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JP7454038B2 (ja) * 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
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Also Published As

Publication number Publication date
US7864296B2 (en) 2011-01-04
CN1900828A (zh) 2007-01-24
KR100871505B1 (ko) 2008-12-05
JP2007035671A (ja) 2007-02-08
KR20070012248A (ko) 2007-01-25
TW200717186A (en) 2007-05-01
TWI348596B (en) 2011-09-11
US20070046921A1 (en) 2007-03-01
CN1900828B (zh) 2011-11-02

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