TWI348596B - Exposure apparatus and method - Google Patents

Exposure apparatus and method

Info

Publication number
TWI348596B
TWI348596B TW095126818A TW95126818A TWI348596B TW I348596 B TWI348596 B TW I348596B TW 095126818 A TW095126818 A TW 095126818A TW 95126818 A TW95126818 A TW 95126818A TW I348596 B TWI348596 B TW I348596B
Authority
TW
Taiwan
Prior art keywords
exposure apparatus
exposure
Prior art date
Application number
TW095126818A
Other languages
English (en)
Other versions
TW200717186A (en
Inventor
Kazuhiro Takahashi
Koji Mikami
Michio Kono
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200717186A publication Critical patent/TW200717186A/zh
Application granted granted Critical
Publication of TWI348596B publication Critical patent/TWI348596B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095126818A 2005-07-22 2006-07-21 Exposure apparatus and method TWI348596B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005212254A JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Publications (2)

Publication Number Publication Date
TW200717186A TW200717186A (en) 2007-05-01
TWI348596B true TWI348596B (en) 2011-09-11

Family

ID=37656739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126818A TWI348596B (en) 2005-07-22 2006-07-21 Exposure apparatus and method

Country Status (5)

Country Link
US (1) US7864296B2 (zh)
JP (1) JP4701030B2 (zh)
KR (1) KR100871505B1 (zh)
CN (1) CN1900828B (zh)
TW (1) TWI348596B (zh)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101324402B1 (ko) * 2005-11-03 2013-11-01 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 프로젝션 노광 장치 및 이 장치의 교정방법
JP4478670B2 (ja) * 2006-09-08 2010-06-09 ソニー株式会社 １次元照明装置及び画像生成装置
DE102008003916A1 (de) * 2007-01-23 2008-07-24 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit Messvorrichtung sowie Verfahren zum Messen einer Bestrahlungsstärkeverteilung
KR100919578B1 (ko) * 2007-02-15 2009-10-01 주식회사 하이닉스반도체 노광 장치 및 이를 이용한 반도체 소자의 형성 방법
JP4966724B2 (ja) 2007-04-20 2012-07-04 キヤノン株式会社 露光装置及びデバイス製造方法
US7817250B2 (en) 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
JP2009025553A (ja) 2007-07-19 2009-02-05 Canon Inc 位相シフトマスク
JP4950795B2 (ja) * 2007-07-30 2012-06-13 キヤノン株式会社 露光装置、デバイス製造方法及び補正方法
US7999920B2 (en) * 2007-08-22 2011-08-16 Asml Netherlands B.V. Method of performing model-based scanner tuning
US8570489B2 (en) * 2007-11-08 2013-10-29 Asml Netherlands B.V. Lithographic projection apparatus and method of compensating perturbation factors
KR100945387B1 (ko) * 2007-11-14 2010-03-04 서강대학교산학협력단 시료의 비선형계수의 균질성 검사 장치
JP5055141B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 評価方法、調整方法、露光装置、およびプログラム
JP2009194041A (ja) 2008-02-12 2009-08-27 Canon Inc 評価方法、調整方法、露光装置、およびコンピュータプログラム
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
JP4568340B2 (ja) * 2008-03-12 2010-10-27 株式会社東芝 半導体装置の製造方法
JP5238879B2 (ja) * 2008-05-09 2013-07-17 カール・ツァイス・エスエムティー・ゲーエムベーハー フーリエ光学系を含む照明系
US8806387B2 (en) * 2008-06-03 2014-08-12 Asml Netherlands B.V. Model-based process simulation systems and methods
JP2010034478A (ja) * 2008-07-31 2010-02-12 Toshiba Corp 露光装置の管理方法、半導体装置の製造方法及びフォトマスク
CN102138201B (zh) * 2008-09-01 2014-12-31 D2S公司 用可变形束光刻的光学邻近校正、设计和制造光刻板方法
JP2010114266A (ja) * 2008-11-06 2010-05-20 Canon Inc 露光装置およびその制御方法、ならびにデバイス製造方法
EP2207064A1 (en) * 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
JP5842808B2 (ja) * 2010-02-20 2016-01-13 株式会社ニコン 瞳強度分布を調整する方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
JP5787382B2 (ja) * 2011-02-28 2015-09-30 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明系
JP5168526B2 (ja) 2011-05-10 2013-03-21 大日本印刷株式会社 投射型映像表示装置
DE102012203944A1 (de) * 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
US9823075B2 (en) * 2013-01-10 2017-11-21 Xiaotian Steve Yao Non-interferometric optical gyroscope based on polarization sensing
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids
WO2014154229A1 (en) 2013-03-28 2014-10-02 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution
US9817320B2 (en) 2013-11-20 2017-11-14 Asml Netherlands B.V. Lithographic method and apparatus
CN103926806B (zh) * 2014-05-05 2016-03-30 北京理工大学 一种实现光瞳偏振态任意分布的光刻照明系统设计方法
CN110618580B (zh) * 2017-08-08 2021-08-24 广东弘景光电科技股份有限公司 检测方法及系统
DE102021202847A1 (de) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330648B2 (ja) * 1992-10-06 2002-09-30 富士通株式会社 光源形状の最適化方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
JP3630852B2 (ja) * 1995-05-16 2005-03-23 キヤノン株式会社 パターン形成状態検出装置及びそれを用いた投影露光装置
US5680588A (en) * 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
KR20010023314A (ko) * 1997-08-26 2001-03-26 오노 시게오 노광 장치, 노광 방법, 투영 광학계의 압력 조정 방법 및노광 장치의 조립 방법
US6689519B2 (en) * 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
TW552561B (en) * 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JP2002319539A (ja) * 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP4436029B2 (ja) * 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
JP4154144B2 (ja) * 2001-11-13 2008-09-24 キヤノン株式会社 露光装置、発光制御方法、およびデバイス製造方法
JP4298336B2 (ja) * 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
JP3689681B2 (ja) * 2002-05-10 2005-08-31 キヤノン株式会社 測定装置及びそれを有する装置群
JP2004037137A (ja) * 2002-07-01 2004-02-05 Canon Inc 複屈折測定装置、除歪装置、偏光状態検出装置及び露光装置
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
JP4356695B2 (ja) * 2003-05-09 2009-11-04 株式会社ニコン 照明光学系、投影露光装置、マイクロデバイスの製造方法
JP2005005521A (ja) * 2003-06-12 2005-01-06 Nikon Corp 露光装置、露光方法、および偏光状態測定装置
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
AU2003304487A1 (en) * 2003-09-26 2005-04-14 Carl Zeiss Smt Ag Microlithographic projection exposure
JP4351962B2 (ja) * 2004-07-05 2009-10-28 株式会社東芝 露光システム及び半導体装置の製造方法
WO2006016584A1 (ja) * 2004-08-09 2006-02-16 Nikon Corporation 光学特性計測装置及び光学特性計測方法、露光装置及び露光方法、並びにデバイス製造方法
US7619747B2 (en) * 2004-12-17 2009-11-17 Asml Netherlands B.V. Lithographic apparatus, analyzer plate, subassembly, method of measuring a parameter of a projection system and patterning device
US7312852B2 (en) * 2004-12-28 2007-12-25 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US8675176B2 (en) * 2005-02-25 2014-03-18 Asml Netherlands B.V. Parameter control in a lithographic apparatus using polarization

Also Published As

Publication number Publication date
US20070046921A1 (en) 2007-03-01
KR20070012248A (ko) 2007-01-25
US7864296B2 (en) 2011-01-04
KR100871505B1 (ko) 2008-12-05
CN1900828B (zh) 2011-11-02
CN1900828A (zh) 2007-01-24
JP4701030B2 (ja) 2011-06-15
JP2007035671A (ja) 2007-02-08
TW200717186A (en) 2007-05-01

Similar Documents

Publication Publication Date Title
HK1252345A1 (zh) 曝光裝置和曝光方法
HK1220516A1 (zh) 曝光裝置與曝光方法
HK1199771A1 (zh) 曝光裝置和方法
TWI348596B (en) Exposure apparatus and method
HK1193879A1 (zh) 曝光設備和曝光方法
GB2431016B (en) Projection apparatus and method
HK1197695A1 (zh) 曝光裝置與曝光方法
EP1918983A4 (en) STAGE EQUIPMENT AND EXPOSURE DEVICE
EP1863070A4 (en) EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
GB0501688D0 (en) Method and apparatus
EP1922588A4 (en) METHOD AND SHAPE EXPOSURE DEVICE
GB0506186D0 (en) Apparatus and method
TWI339984B (en) Imaging apparatus and imaging method
GB0621488D0 (en) Apparatus and method
GB0522150D0 (en) Projection apparatus and method
GB0526501D0 (en) Method and Apparatus
EP1909310A4 (en) EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
GB0611868D0 (en) Method and apparatus
GB0605136D0 (en) Apparatus and method
GB0523084D0 (en) Imaging method and apparatus
GB2438094B (en) Apparatus and method
GB0513613D0 (en) Apparatus and method
GB0508695D0 (en) Apparatus and method
TWI368932B (en) Exposure apparatus and method
GB0517531D0 (en) Method and apparatus