TWI348596B - Exposure apparatus and method - Google Patents

Exposure apparatus and method

Info

Publication number
TWI348596B
TWI348596B TW095126818A TW95126818A TWI348596B TW I348596 B TWI348596 B TW I348596B TW 095126818 A TW095126818 A TW 095126818A TW 95126818 A TW95126818 A TW 95126818A TW I348596 B TWI348596 B TW I348596B
Authority
TW
Taiwan
Prior art keywords
exposure apparatus
exposure
Prior art date
Application number
TW095126818A
Other languages
English (en)
Chinese (zh)
Other versions
TW200717186A (en
Inventor
Kazuhiro Takahashi
Koji Mikami
Michio Kono
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of TW200717186A publication Critical patent/TW200717186A/zh
Application granted granted Critical
Publication of TWI348596B publication Critical patent/TWI348596B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095126818A 2005-07-22 2006-07-21 Exposure apparatus and method TWI348596B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005212254A JP4701030B2 (ja) 2005-07-22 2005-07-22 露光装置、露光パラメータを設定する設定方法、露光方法、デバイス製造方法及びプログラム

Publications (2)

Publication Number Publication Date
TW200717186A TW200717186A (en) 2007-05-01
TWI348596B true TWI348596B (en) 2011-09-11

Family

ID=37656739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095126818A TWI348596B (en) 2005-07-22 2006-07-21 Exposure apparatus and method

Country Status (5)

Country Link
US (1) US7864296B2 (OSRAM)
JP (1) JP4701030B2 (OSRAM)
KR (1) KR100871505B1 (OSRAM)
CN (1) CN1900828B (OSRAM)
TW (1) TWI348596B (OSRAM)

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DE102008003916A1 (de) * 2007-01-23 2008-07-24 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit Messvorrichtung sowie Verfahren zum Messen einer Bestrahlungsstärkeverteilung
KR100919578B1 (ko) * 2007-02-15 2009-10-01 주식회사 하이닉스반도체 노광 장치 및 이를 이용한 반도체 소자의 형성 방법
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US7817250B2 (en) 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
JP2009025553A (ja) 2007-07-19 2009-02-05 Canon Inc 位相シフトマスク
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JP5055141B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 評価方法、調整方法、露光装置、およびプログラム
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JP2010034478A (ja) * 2008-07-31 2010-02-12 Toshiba Corp 露光装置の管理方法、半導体装置の製造方法及びフォトマスク
KR101688506B1 (ko) * 2008-09-01 2016-12-21 디2에스, 인코포레이티드 가변 형상 비임 리소그래피를 이용한 레티클의 광 근접 보정, 설계 및 제조 방법
JP2010114266A (ja) * 2008-11-06 2010-05-20 Canon Inc 露光装置およびその制御方法、ならびにデバイス製造方法
EP2207064A1 (en) * 2009-01-09 2010-07-14 Takumi Technology Corporation Method of selecting a set of illumination conditions of a lithographic apparatus for optimizing an integrated circuit physical layout
JP5842808B2 (ja) * 2010-02-20 2016-01-13 株式会社ニコン 瞳強度分布を調整する方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP2011197520A (ja) * 2010-03-23 2011-10-06 Toppan Printing Co Ltd フォトマスク製造方法
DE102010029651A1 (de) * 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
KR101758958B1 (ko) * 2011-02-28 2017-07-17 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
JP5168526B2 (ja) * 2011-05-10 2013-03-21 大日本印刷株式会社 投射型映像表示装置
DE102012203944A1 (de) * 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
DE102012207377A1 (de) * 2012-05-03 2013-11-07 Carl Zeiss Smt Gmbh Beleuchtungsoptik sowie optisches System für die EUV-Projektionslithographie
WO2014110299A1 (en) * 2013-01-10 2014-07-17 Xiaotian Steve Yao Non-interferometric optical gyroscope based on polarization sensing
US20140211175A1 (en) * 2013-01-31 2014-07-31 Globalfoundries Inc. Enhancing resolution in lithographic processes using high refractive index fluids
WO2014154229A1 (en) 2013-03-28 2014-10-02 Carl Zeiss Smt Gmbh Microlithographic apparatus and method of varying a light irradiance distribution
KR101831320B1 (ko) 2013-11-20 2018-02-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 장치
CN103926806B (zh) * 2014-05-05 2016-03-30 北京理工大学 一种实现光瞳偏振态任意分布的光刻照明系统设计方法
CN111045287B (zh) * 2017-08-08 2021-08-24 广东弘景光电科技股份有限公司 广角摄像头模组的检测系统
KR102535147B1 (ko) * 2017-09-07 2023-05-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 방법 및 장치
WO2019146448A1 (ja) * 2018-01-24 2019-08-01 株式会社ニコン 露光装置及び露光方法
JP7454038B2 (ja) * 2020-03-19 2024-03-21 ギガフォトン株式会社 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
CN113820922B (zh) * 2020-06-18 2024-08-02 台湾积体电路制造股份有限公司 热点预测方法、装置及记录介质
DE102021202847A1 (de) * 2021-03-24 2022-09-29 Carl Zeiss Smt Gmbh Beleuchtungsoptik für eine Projektionsbelichtungsanlage für die Lithografie

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Also Published As

Publication number Publication date
US7864296B2 (en) 2011-01-04
CN1900828A (zh) 2007-01-24
JP4701030B2 (ja) 2011-06-15
KR100871505B1 (ko) 2008-12-05
JP2007035671A (ja) 2007-02-08
KR20070012248A (ko) 2007-01-25
TW200717186A (en) 2007-05-01
US20070046921A1 (en) 2007-03-01
CN1900828B (zh) 2011-11-02

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