JP4677571B2 - 電子ビーム投影装置及びフォーカシング方法 - Google Patents

電子ビーム投影装置及びフォーカシング方法 Download PDF

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Publication number
JP4677571B2
JP4677571B2 JP2001266161A JP2001266161A JP4677571B2 JP 4677571 B2 JP4677571 B2 JP 4677571B2 JP 2001266161 A JP2001266161 A JP 2001266161A JP 2001266161 A JP2001266161 A JP 2001266161A JP 4677571 B2 JP4677571 B2 JP 4677571B2
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Japan
Prior art keywords
electron beam
lens system
projection lens
wafer
spherical aberration
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Expired - Fee Related
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JP2001266161A
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English (en)
Japanese (ja)
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JP2002141281A5 (cg-RX-API-DMAC7.html
JP2002141281A (ja
Inventor
カツァップ ヴィクター
マンロー エリック
エー ラウズ ジョン
ケー ワスキエウィッチ ウォーレン
ジュー シエチン
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eLith LLC
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eLith LLC
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Publication date
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Publication of JP2002141281A5 publication Critical patent/JP2002141281A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2001266161A 2000-09-04 2001-09-03 電子ビーム投影装置及びフォーカシング方法 Expired - Fee Related JP4677571B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00307641A EP1184891B1 (en) 2000-09-04 2000-09-04 Electron beam lithography
EP00307641.1 2000-09-04

Publications (3)

Publication Number Publication Date
JP2002141281A JP2002141281A (ja) 2002-05-17
JP2002141281A5 JP2002141281A5 (cg-RX-API-DMAC7.html) 2008-06-26
JP4677571B2 true JP4677571B2 (ja) 2011-04-27

Family

ID=8173243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001266161A Expired - Fee Related JP4677571B2 (ja) 2000-09-04 2001-09-03 電子ビーム投影装置及びフォーカシング方法

Country Status (6)

Country Link
US (2) US6440620B1 (cg-RX-API-DMAC7.html)
EP (1) EP1184891B1 (cg-RX-API-DMAC7.html)
JP (1) JP4677571B2 (cg-RX-API-DMAC7.html)
KR (1) KR100577754B1 (cg-RX-API-DMAC7.html)
DE (1) DE60040664D1 (cg-RX-API-DMAC7.html)
TW (1) TW574720B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050048412A1 (en) * 2003-08-28 2005-03-03 Pary Baluswamy Methods for reducing spherical aberration effects in photolithography
US7489828B2 (en) * 2003-10-03 2009-02-10 Media Cybernetics, Inc. Methods, system, and program product for the detection and correction of spherical aberration
WO2006021958A2 (en) * 2004-08-24 2006-03-02 Sela Semiconductor Engineering Laboratories Ltd. Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof
DE102004048892A1 (de) * 2004-10-06 2006-04-20 Leica Microsystems Lithography Gmbh Beleuchtungssystem für eine Korpuskularstrahleinrichtung und Verfahren zur Beleuchtung mit einem Korpuskularstrahl
US20060209410A1 (en) * 2005-03-18 2006-09-21 Smith Adlai H Method and apparatus for compensation or amelioration of lens field curvature and other imaging defects by utilizing a multi-wavelength setting illumination source
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US8217352B2 (en) * 2009-09-11 2012-07-10 Lawrence Livermore National Security, Llc Ponderomotive phase plate for transmission electron microscopes
US8541755B1 (en) * 2012-05-09 2013-09-24 Jeol Ltd. Electron microscope
US10354206B2 (en) * 2014-10-02 2019-07-16 Airbnb, Inc. Determining host preferences for accommodation listings
US10248974B2 (en) * 2016-06-24 2019-04-02 International Business Machines Corporation Assessing probability of winning an in-flight deal for different price points

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH06139983A (ja) * 1992-10-28 1994-05-20 Nikon Corp 荷電粒子線装置
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
JPH1070059A (ja) * 1996-08-26 1998-03-10 Nikon Corp 荷電粒子線転写装置
JPH1154076A (ja) * 1997-07-31 1999-02-26 Seiko Instr Inc 走査型電子顕微鏡用対物レンズ
JPH1167642A (ja) * 1997-08-21 1999-03-09 Nikon Corp 荷電粒子線投影方法および荷電粒子線投影装置
JPH11176737A (ja) * 1997-12-10 1999-07-02 Nikon Corp 荷電ビーム露光装置
US6069363A (en) * 1998-02-26 2000-05-30 International Business Machines Corporation Magnetic-electrostatic symmetric doublet projection lens

Also Published As

Publication number Publication date
US6440620B1 (en) 2002-08-27
TW574720B (en) 2004-02-01
KR20020018981A (ko) 2002-03-09
DE60040664D1 (de) 2008-12-11
EP1184891B1 (en) 2008-10-29
KR100577754B1 (ko) 2006-05-10
US20030022077A1 (en) 2003-01-30
JP2002141281A (ja) 2002-05-17
US6620565B2 (en) 2003-09-16
EP1184891A1 (en) 2002-03-06

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