KR100577754B1 - 전자빔 리소그라피 장치 및 방법 - Google Patents

전자빔 리소그라피 장치 및 방법 Download PDF

Info

Publication number
KR100577754B1
KR100577754B1 KR1020010054187A KR20010054187A KR100577754B1 KR 100577754 B1 KR100577754 B1 KR 100577754B1 KR 1020010054187 A KR1020010054187 A KR 1020010054187A KR 20010054187 A KR20010054187 A KR 20010054187A KR 100577754 B1 KR100577754 B1 KR 100577754B1
Authority
KR
South Korea
Prior art keywords
electron beam
projection
spherical aberration
electron
projection column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020010054187A
Other languages
English (en)
Korean (ko)
Other versions
KR20020018981A (ko
Inventor
캐찹빅터
문로에릭
로우즈존에이.
와스키에위키즈워렌케이.
주시에킹
Original Assignee
에이저 가디언 시스템즈, 인코포레이티드
이리스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 가디언 시스템즈, 인코포레이티드, 이리스, 엘엘씨 filed Critical 에이저 가디언 시스템즈, 인코포레이티드
Publication of KR20020018981A publication Critical patent/KR20020018981A/ko
Application granted granted Critical
Publication of KR100577754B1 publication Critical patent/KR100577754B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020010054187A 2000-09-04 2001-09-04 전자빔 리소그라피 장치 및 방법 Expired - Fee Related KR100577754B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP00307641A EP1184891B1 (en) 2000-09-04 2000-09-04 Electron beam lithography
EP00307641.1 2000-09-04

Publications (2)

Publication Number Publication Date
KR20020018981A KR20020018981A (ko) 2002-03-09
KR100577754B1 true KR100577754B1 (ko) 2006-05-10

Family

ID=8173243

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010054187A Expired - Fee Related KR100577754B1 (ko) 2000-09-04 2001-09-04 전자빔 리소그라피 장치 및 방법

Country Status (6)

Country Link
US (2) US6440620B1 (cg-RX-API-DMAC7.html)
EP (1) EP1184891B1 (cg-RX-API-DMAC7.html)
JP (1) JP4677571B2 (cg-RX-API-DMAC7.html)
KR (1) KR100577754B1 (cg-RX-API-DMAC7.html)
DE (1) DE60040664D1 (cg-RX-API-DMAC7.html)
TW (1) TW574720B (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050048412A1 (en) * 2003-08-28 2005-03-03 Pary Baluswamy Methods for reducing spherical aberration effects in photolithography
US7489828B2 (en) * 2003-10-03 2009-02-10 Media Cybernetics, Inc. Methods, system, and program product for the detection and correction of spherical aberration
WO2006021958A2 (en) * 2004-08-24 2006-03-02 Sela Semiconductor Engineering Laboratories Ltd. Directed multi-deflected ion beam milling of a work piece and determining and controlling extent thereof
DE102004048892A1 (de) * 2004-10-06 2006-04-20 Leica Microsystems Lithography Gmbh Beleuchtungssystem für eine Korpuskularstrahleinrichtung und Verfahren zur Beleuchtung mit einem Korpuskularstrahl
US20060209410A1 (en) * 2005-03-18 2006-09-21 Smith Adlai H Method and apparatus for compensation or amelioration of lens field curvature and other imaging defects by utilizing a multi-wavelength setting illumination source
EP2228817B1 (en) * 2009-03-09 2012-07-18 IMS Nanofabrication AG Global point spreading function in multi-beam patterning
US8217352B2 (en) * 2009-09-11 2012-07-10 Lawrence Livermore National Security, Llc Ponderomotive phase plate for transmission electron microscopes
US8541755B1 (en) * 2012-05-09 2013-09-24 Jeol Ltd. Electron microscope
US10354206B2 (en) * 2014-10-02 2019-07-16 Airbnb, Inc. Determining host preferences for accommodation listings
US10248974B2 (en) * 2016-06-24 2019-04-02 International Business Machines Corporation Assessing probability of winning an in-flight deal for different price points

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240553A (ja) * 1985-04-18 1986-10-25 Jeol Ltd イオンビ−ム描画装置
US5079112A (en) * 1989-08-07 1992-01-07 At&T Bell Laboratories Device manufacture involving lithographic processing
JPH06139983A (ja) * 1992-10-28 1994-05-20 Nikon Corp 荷電粒子線装置
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
JPH1070059A (ja) * 1996-08-26 1998-03-10 Nikon Corp 荷電粒子線転写装置
JPH1154076A (ja) * 1997-07-31 1999-02-26 Seiko Instr Inc 走査型電子顕微鏡用対物レンズ
JPH1167642A (ja) * 1997-08-21 1999-03-09 Nikon Corp 荷電粒子線投影方法および荷電粒子線投影装置
JPH11176737A (ja) * 1997-12-10 1999-07-02 Nikon Corp 荷電ビーム露光装置
US6069363A (en) * 1998-02-26 2000-05-30 International Business Machines Corporation Magnetic-electrostatic symmetric doublet projection lens

Also Published As

Publication number Publication date
US6440620B1 (en) 2002-08-27
TW574720B (en) 2004-02-01
KR20020018981A (ko) 2002-03-09
JP4677571B2 (ja) 2011-04-27
DE60040664D1 (de) 2008-12-11
EP1184891B1 (en) 2008-10-29
US20030022077A1 (en) 2003-01-30
JP2002141281A (ja) 2002-05-17
US6620565B2 (en) 2003-09-16
EP1184891A1 (en) 2002-03-06

Similar Documents

Publication Publication Date Title
US4243866A (en) Method and apparatus for forming a variable size electron beam
JP7336926B2 (ja) 性能が向上されたマルチ電子ビーム撮像装置
KR100577754B1 (ko) 전자빔 리소그라피 장치 및 방법
JP5117652B2 (ja) 電子線リソグラフィー方法および電子光学的リソグラフィーシステム
JP4603305B2 (ja) 露光方法、パターン寸法調整方法及び焦点ぼかし量取得方法
JP4652830B2 (ja) 収差調整方法、デバイス製造方法及び荷電粒子線露光装置
CN118176560A (zh) 用于提供形貌信息的高分辨率、低能量电子显微镜和掩模检查方法
CN113466266A (zh) 用于获取3d衍射数据的方法和系统
US5801388A (en) Particle beam, in particular ionic optic imaging system
JP4207232B2 (ja) 荷電ビーム露光装置
JP2009512973A (ja) 荷電粒子システム
US6830852B2 (en) Stencil reticles for use in charged-particle-beam microlithography, and pattern-determination methods for such reticles
US6066855A (en) Charged-particle-beam optical system exhibiting aberration correction
GB1587852A (en) Electron beam apparatus
EP1046184B1 (en) Quadrupole device for projection lithography by means of charged particles
JPH06338445A (ja) 電子ビーム描画装置
EP1046185B1 (en) Projection lithography device utilizing charged particles
KR102811445B1 (ko) 멀티 하전 입자 빔 장치의 광학계 조정 방법 및 컴퓨터 판독 가능한 기록 매체
JPS5866332A (ja) 荷電粒子ビ−ム装置の開口角制限装置
JPH1125896A (ja) 電子光学系
TW202414491A (zh) 改善二次電子小束成像在偵檢器上的多束帶電粒子束成像系統
JPH09223659A (ja) 荷電粒子線転写方法及び装置
JP2007189155A (ja) レチクル及び荷電粒子線露光装置
JP2007335385A (ja) 収差補正荷電粒子ビーム発生装置
JPS62150823A (ja) 荷電ビ−ムの調整方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130419

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140421

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150504

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20190419

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20200502

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20200502