JP4668668B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4668668B2
JP4668668B2 JP2005116612A JP2005116612A JP4668668B2 JP 4668668 B2 JP4668668 B2 JP 4668668B2 JP 2005116612 A JP2005116612 A JP 2005116612A JP 2005116612 A JP2005116612 A JP 2005116612A JP 4668668 B2 JP4668668 B2 JP 4668668B2
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JP
Japan
Prior art keywords
read
write
current
memory cells
reading
Prior art date
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Expired - Fee Related
Application number
JP2005116612A
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English (en)
Japanese (ja)
Other versions
JP2006294181A (ja
JP2006294181A5 (enExample
Inventor
健一 長田
清男 伊藤
健三 黒土
則克 高浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005116612A priority Critical patent/JP4668668B2/ja
Priority to TW094145274A priority patent/TWI431761B/zh
Priority to CN200610006409XA priority patent/CN1819059B/zh
Priority to KR1020060006515A priority patent/KR101158490B1/ko
Priority to US11/341,385 priority patent/US7443721B2/en
Publication of JP2006294181A publication Critical patent/JP2006294181A/ja
Publication of JP2006294181A5 publication Critical patent/JP2006294181A5/ja
Application granted granted Critical
Publication of JP4668668B2 publication Critical patent/JP4668668B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005116612A 2005-02-10 2005-04-14 半導体装置 Expired - Fee Related JP4668668B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005116612A JP4668668B2 (ja) 2005-04-14 2005-04-14 半導体装置
TW094145274A TWI431761B (zh) 2005-02-10 2005-12-20 半導體積體電路裝置
CN200610006409XA CN1819059B (zh) 2005-02-10 2006-01-20 半导体存储装置
KR1020060006515A KR101158490B1 (ko) 2005-02-10 2006-01-20 반도체집적회로 장치
US11/341,385 US7443721B2 (en) 2005-02-10 2006-01-30 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005116612A JP4668668B2 (ja) 2005-04-14 2005-04-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2006294181A JP2006294181A (ja) 2006-10-26
JP2006294181A5 JP2006294181A5 (enExample) 2008-05-15
JP4668668B2 true JP4668668B2 (ja) 2011-04-13

Family

ID=37414572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005116612A Expired - Fee Related JP4668668B2 (ja) 2005-02-10 2005-04-14 半導体装置

Country Status (1)

Country Link
JP (1) JP4668668B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601138B (zh) * 2011-09-09 2017-10-01 英特爾公司 記憶體裝置中的路徑分離技術（二）

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080101110A1 (en) * 2006-10-25 2008-05-01 Thomas Happ Combined read/write circuit for memory
JP5490357B2 (ja) 2007-04-04 2014-05-14 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその制御方法
JP5474313B2 (ja) 2008-04-25 2014-04-16 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその制御方法
JP4720912B2 (ja) * 2009-01-22 2011-07-13 ソニー株式会社 抵抗変化型メモリデバイス
WO2018136187A1 (en) * 2017-01-20 2018-07-26 Rambus Inc. Rram write

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
DE102004016408B4 (de) * 2003-03-27 2008-08-07 Samsung Electronics Co., Ltd., Suwon Phasenwechselspeicherbaustein und zugehöriges Programmierverfahren
TW200527656A (en) * 2004-02-05 2005-08-16 Renesas Tech Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601138B (zh) * 2011-09-09 2017-10-01 英特爾公司 記憶體裝置中的路徑分離技術（二）
TWI634553B (zh) * 2011-09-09 2018-09-01 美商英特爾公司 記憶體裝置中的路徑分離技術（三）

Also Published As

Publication number Publication date
JP2006294181A (ja) 2006-10-26

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