JP4665394B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4665394B2
JP4665394B2 JP2003410153A JP2003410153A JP4665394B2 JP 4665394 B2 JP4665394 B2 JP 4665394B2 JP 2003410153 A JP2003410153 A JP 2003410153A JP 2003410153 A JP2003410153 A JP 2003410153A JP 4665394 B2 JP4665394 B2 JP 4665394B2
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Prior art keywords
nitride semiconductor
region
layer
semiconductor substrate
main surface
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JP2003410153A
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Japanese (ja)
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JP2005175056A (ja
JP2005175056A5 (enExample
Inventor
拓明 松村
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Nichia Corp
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Nichia Corp
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Publication of JP2005175056A5 publication Critical patent/JP2005175056A5/ja
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JP2003410153A 2003-12-09 2003-12-09 窒化物半導体レーザ素子 Expired - Lifetime JP4665394B2 (ja)

Priority Applications (1)

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JP2003410153A JP4665394B2 (ja) 2003-12-09 2003-12-09 窒化物半導体レーザ素子

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JP2003410153A JP4665394B2 (ja) 2003-12-09 2003-12-09 窒化物半導体レーザ素子

Publications (3)

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JP2005175056A JP2005175056A (ja) 2005-06-30
JP2005175056A5 JP2005175056A5 (enExample) 2007-02-01
JP4665394B2 true JP4665394B2 (ja) 2011-04-06

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JP2003410153A Expired - Lifetime JP4665394B2 (ja) 2003-12-09 2003-12-09 窒化物半導体レーザ素子

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4316454B2 (ja) * 2004-09-10 2009-08-19 株式会社東芝 半導体基板、半導体素子、半導体素子の製造方法及び半導体基板の製造方法
JP2007088269A (ja) * 2005-09-22 2007-04-05 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP4535997B2 (ja) * 2005-12-09 2010-09-01 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
EP1981093A4 (en) * 2006-01-20 2011-10-05 Panasonic Corp SEMICONDUCTOR ELECTROLUMINESCENT ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
JP5056142B2 (ja) 2006-05-11 2012-10-24 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法及び窒化物半導体レーザ素子
JP2008141187A (ja) * 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
US7838316B2 (en) 2007-07-18 2010-11-23 Nichia Corporation Method for manufacturing a nitride semiconductor laser element and a nitride semiconductor laser element
CN101855798B (zh) 2007-11-08 2013-02-27 日亚化学工业株式会社 半导体激光器元件
JP5053893B2 (ja) 2008-03-07 2012-10-24 住友電気工業株式会社 窒化物半導体レーザを作製する方法
KR101142672B1 (ko) 2008-09-11 2012-05-11 스미토모덴키고교가부시키가이샤 질화물계 반도체 광소자, 질화물계 반도체 광소자용의 에피택셜 웨이퍼, 및 반도체 발광 소자를 제조하는 방법
JP5355158B2 (ja) * 2009-03-13 2013-11-27 株式会社東芝 半導体基板及び半導体素子
JP5304428B2 (ja) * 2009-05-15 2013-10-02 ソニー株式会社 半導体レーザ
JP4450112B2 (ja) * 2009-06-29 2010-04-14 住友電気工業株式会社 窒化物系半導体光素子
JP2021012900A (ja) * 2019-07-03 2021-02-04 パナソニックＩｐマネジメント株式会社 Ｉｉｉ族窒化物系半導体レーザ素子
JP7336377B2 (ja) * 2019-12-12 2023-08-31 シャープ福山レーザー株式会社 半導体レーザ素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3682827B2 (ja) * 1997-12-05 2005-08-17 日亜化学工業株式会社 窒化物半導体レーザ素子
JP4457417B2 (ja) * 1998-09-22 2010-04-28 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3794530B2 (ja) * 1998-12-24 2006-07-05 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2001148540A (ja) * 1999-09-09 2001-05-29 Sharp Corp 半導体発光素子
JP2002141283A (ja) * 2000-08-08 2002-05-17 Matsushita Electric Ind Co Ltd 半導体基板、その製造方法、半導体装置及びパターン形成方法
JP4889142B2 (ja) * 2000-10-17 2012-03-07 三洋電機株式会社 窒化物系半導体レーザ素子
JP3973523B2 (ja) * 2002-09-20 2007-09-12 三洋電機株式会社 窒化物系半導体レーザ素子
JP4245638B2 (ja) * 2007-03-15 2009-03-25 三洋電機株式会社 窒化物系半導体レーザ素子

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