JP4657824B2 - 基板載置台、基板処理装置および基板載置台の製造方法 - Google Patents
基板載置台、基板処理装置および基板載置台の製造方法 Download PDFInfo
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- JP4657824B2 JP4657824B2 JP2005178149A JP2005178149A JP4657824B2 JP 4657824 B2 JP4657824 B2 JP 4657824B2 JP 2005178149 A JP2005178149 A JP 2005178149A JP 2005178149 A JP2005178149 A JP 2005178149A JP 4657824 B2 JP4657824 B2 JP 4657824B2
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- 239000000758 substrate Substances 0.000 title claims description 179
- 238000012545 processing Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000000034 method Methods 0.000 title claims description 27
- 239000003989 dielectric material Substances 0.000 claims description 87
- 230000003746 surface roughness Effects 0.000 claims description 33
- 230000002093 peripheral effect Effects 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 24
- 238000005498 polishing Methods 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 20
- 238000005507 spraying Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 13
- 238000007751 thermal spraying Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 11
- 238000005422 blasting Methods 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 45
- 239000007789 gas Substances 0.000 description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 12
- 235000019592 roughness Nutrition 0.000 description 12
- 239000002245 particle Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005178149A JP4657824B2 (ja) | 2005-06-17 | 2005-06-17 | 基板載置台、基板処理装置および基板載置台の製造方法 |
KR1020060053935A KR100904563B1 (ko) | 2005-06-17 | 2006-06-15 | 기판 탑재대, 기판 처리 장치 및 기판 탑재대의 제조 방법 |
TW095121599A TWI413205B (zh) | 2005-06-17 | 2006-06-16 | A substrate mounting table, a substrate processing apparatus, and a substrate mounting table |
CNB2006100923036A CN100411133C (zh) | 2005-06-17 | 2006-06-16 | 基板载置台、基板处理装置和基板载置台的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005178149A JP4657824B2 (ja) | 2005-06-17 | 2005-06-17 | 基板載置台、基板処理装置および基板載置台の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006351949A JP2006351949A (ja) | 2006-12-28 |
JP4657824B2 true JP4657824B2 (ja) | 2011-03-23 |
Family
ID=37519680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005178149A Active JP4657824B2 (ja) | 2005-06-17 | 2005-06-17 | 基板載置台、基板処理装置および基板載置台の製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4657824B2 (zh) |
KR (1) | KR100904563B1 (zh) |
CN (1) | CN100411133C (zh) |
TW (1) | TWI413205B (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4864757B2 (ja) * | 2007-02-14 | 2012-02-01 | 東京エレクトロン株式会社 | 基板載置台及びその表面処理方法 |
JP5059450B2 (ja) * | 2007-03-06 | 2012-10-24 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
WO2008114753A1 (ja) * | 2007-03-22 | 2008-09-25 | Tokyo Electron Limited | 基板載置台,基板処理装置,基板載置台の表面加工方法 |
JP4516089B2 (ja) * | 2007-03-30 | 2010-08-04 | アプライド マテリアルズ インコーポレイテッド | ウェハ搬送用ブレード |
JP2008300374A (ja) * | 2007-05-29 | 2008-12-11 | Shin Etsu Chem Co Ltd | 静電吸着装置 |
KR100938874B1 (ko) * | 2007-07-24 | 2010-01-27 | 주식회사 에스에프에이 | 유리기판 지지용 서셉터 및 그 제조 방법, 그리고 그유리기판 지지용 서셉터를 구비한 화학 기상 증착장치 |
JP2009188332A (ja) | 2008-02-08 | 2009-08-20 | Tokyo Electron Ltd | プラズマ処理装置用基板載置台、プラズマ処理装置および絶縁皮膜の成膜方法 |
JP5612300B2 (ja) * | 2009-12-01 | 2014-10-22 | 東京エレクトロン株式会社 | 基板載置台、その製造方法及び基板処理装置 |
JP2012028539A (ja) * | 2010-07-23 | 2012-02-09 | Ngk Spark Plug Co Ltd | セラミックス接合体 |
JP6010296B2 (ja) * | 2010-12-28 | 2016-10-19 | 東京エレクトロン株式会社 | 静電チャック |
CN102732861B (zh) * | 2011-04-14 | 2014-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘及具有其的化学气相沉积设备 |
WO2012166256A1 (en) * | 2011-06-02 | 2012-12-06 | Applied Materials, Inc. | Electrostatic chuck aln dielectric repair |
KR101974386B1 (ko) * | 2012-03-21 | 2019-05-03 | 주식회사 미코 | 정전척 |
TWI514463B (zh) * | 2012-11-30 | 2015-12-21 | Global Material Science Co Ltd | 乾蝕刻設備中的靜電吸附板表面凸點的製造方法 |
KR20150138959A (ko) * | 2014-05-30 | 2015-12-11 | (주)아이씨디 | 챔버 내 피처리 대상물 접촉구조, 정전 척 및 그 제조방법 |
US10020218B2 (en) * | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
JP6991043B2 (ja) * | 2017-11-22 | 2022-02-03 | 東京エレクトロン株式会社 | 基板載置台 |
WO2019245727A1 (en) * | 2018-06-22 | 2019-12-26 | Applied Materials, Inc. | Methods of minimizing wafer backside damage in semiconductor wafer processing |
JP7182916B2 (ja) * | 2018-06-26 | 2022-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP7241519B2 (ja) * | 2018-12-04 | 2023-03-17 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置及び基板載置台の製造方法 |
US11315759B2 (en) * | 2019-02-08 | 2022-04-26 | Hitachi High-Tech Corporation | Plasma processing apparatus |
CN109881184B (zh) * | 2019-03-29 | 2022-03-25 | 拓荆科技股份有限公司 | 具有静电力抑制的基板承载装置 |
CN114351120A (zh) * | 2021-12-27 | 2022-04-15 | 拓荆科技股份有限公司 | 晶圆支撑装置及沉积薄膜厚度控制的方法 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230159A (ja) * | 1988-07-20 | 1990-01-31 | Nikon Corp | 基板吸着装置 |
JPH05205997A (ja) * | 1992-01-29 | 1993-08-13 | Canon Inc | 基板保持盤 |
JPH08330401A (ja) * | 1995-06-02 | 1996-12-13 | Sony Corp | ウエハチャック |
JP2001341043A (ja) * | 2000-06-02 | 2001-12-11 | Sumitomo Osaka Cement Co Ltd | 吸着固定装置 |
JP2001351966A (ja) * | 2000-06-05 | 2001-12-21 | Sumitomo Osaka Cement Co Ltd | サセプタ及びサセプタの製造方法 |
JP2002313898A (ja) * | 2001-02-08 | 2002-10-25 | Tokyo Electron Ltd | 基板載置台およびその製造方法ならびに処理装置 |
JP2003086664A (ja) * | 2001-09-13 | 2003-03-20 | Sumitomo Osaka Cement Co Ltd | 吸着固定装置及びその製造方法 |
JP2003142566A (ja) * | 2001-11-07 | 2003-05-16 | New Creation Co Ltd | 真空吸着器及びその製造方法 |
JP2005142591A (ja) * | 2005-01-31 | 2005-06-02 | Sumitomo Osaka Cement Co Ltd | 静電チャック |
JP2005332910A (ja) * | 2004-05-19 | 2005-12-02 | Hitachi High-Tech Electronics Engineering Co Ltd | 基板チャック、及び表示用パネル基板の製造方法 |
JP2006049352A (ja) * | 2004-07-30 | 2006-02-16 | Sumitomo Osaka Cement Co Ltd | サセプタ装置 |
JP2006073909A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Electron Ltd | 基板処理装置 |
Family Cites Families (5)
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JPS62124735A (ja) * | 1985-11-25 | 1987-06-06 | Denki Kagaku Kogyo Kk | 半導体気相成長用サセプタ |
JP3160229B2 (ja) * | 1997-06-06 | 2001-04-25 | 日本エー・エス・エム株式会社 | プラズマcvd装置用サセプタ及びその製造方法 |
KR20050054317A (ko) * | 2003-12-04 | 2005-06-10 | 엘지.필립스 엘시디 주식회사 | 블래스트 공정을 포함하는 서셉터 제조방법 및 이를 통해제조되는 서셉터 |
US7663860B2 (en) * | 2003-12-05 | 2010-02-16 | Tokyo Electron Limited | Electrostatic chuck |
JP4618253B2 (ja) * | 2004-09-17 | 2011-01-26 | 株式会社ニコン | 基板保持装置、露光装置、及びデバイス製造方法 |
-
2005
- 2005-06-17 JP JP2005178149A patent/JP4657824B2/ja active Active
-
2006
- 2006-06-15 KR KR1020060053935A patent/KR100904563B1/ko active IP Right Grant
- 2006-06-16 CN CNB2006100923036A patent/CN100411133C/zh active Active
- 2006-06-16 TW TW095121599A patent/TWI413205B/zh active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230159A (ja) * | 1988-07-20 | 1990-01-31 | Nikon Corp | 基板吸着装置 |
JPH05205997A (ja) * | 1992-01-29 | 1993-08-13 | Canon Inc | 基板保持盤 |
JPH08330401A (ja) * | 1995-06-02 | 1996-12-13 | Sony Corp | ウエハチャック |
JP2001341043A (ja) * | 2000-06-02 | 2001-12-11 | Sumitomo Osaka Cement Co Ltd | 吸着固定装置 |
JP2001351966A (ja) * | 2000-06-05 | 2001-12-21 | Sumitomo Osaka Cement Co Ltd | サセプタ及びサセプタの製造方法 |
JP2002313898A (ja) * | 2001-02-08 | 2002-10-25 | Tokyo Electron Ltd | 基板載置台およびその製造方法ならびに処理装置 |
JP2003086664A (ja) * | 2001-09-13 | 2003-03-20 | Sumitomo Osaka Cement Co Ltd | 吸着固定装置及びその製造方法 |
JP2003142566A (ja) * | 2001-11-07 | 2003-05-16 | New Creation Co Ltd | 真空吸着器及びその製造方法 |
JP2005332910A (ja) * | 2004-05-19 | 2005-12-02 | Hitachi High-Tech Electronics Engineering Co Ltd | 基板チャック、及び表示用パネル基板の製造方法 |
JP2006049352A (ja) * | 2004-07-30 | 2006-02-16 | Sumitomo Osaka Cement Co Ltd | サセプタ装置 |
JP2006073909A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Electron Ltd | 基板処理装置 |
JP2005142591A (ja) * | 2005-01-31 | 2005-06-02 | Sumitomo Osaka Cement Co Ltd | 静電チャック |
Also Published As
Publication number | Publication date |
---|---|
KR20060132466A (ko) | 2006-12-21 |
CN1881555A (zh) | 2006-12-20 |
TW200715456A (en) | 2007-04-16 |
KR100904563B1 (ko) | 2009-06-25 |
TWI413205B (zh) | 2013-10-21 |
CN100411133C (zh) | 2008-08-13 |
JP2006351949A (ja) | 2006-12-28 |
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