JP4635458B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4635458B2
JP4635458B2 JP2004069278A JP2004069278A JP4635458B2 JP 4635458 B2 JP4635458 B2 JP 4635458B2 JP 2004069278 A JP2004069278 A JP 2004069278A JP 2004069278 A JP2004069278 A JP 2004069278A JP 4635458 B2 JP4635458 B2 JP 4635458B2
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JP
Japan
Prior art keywords
film
semiconductor
layer
light emitting
type
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Expired - Lifetime
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JP2004069278A
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English (en)
Japanese (ja)
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JP2005259971A5 (https=
JP2005259971A (ja
Inventor
真也 園部
久嗣 笠井
善之 粟飯原
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Nichia Corp
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Nichia Corp
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Priority to JP2004069278A priority Critical patent/JP4635458B2/ja
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Publication of JP2005259971A5 publication Critical patent/JP2005259971A5/ja
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Expired - Lifetime legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
JP2004069278A 2004-03-11 2004-03-11 半導体発光素子 Expired - Lifetime JP4635458B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004069278A JP4635458B2 (ja) 2004-03-11 2004-03-11 半導体発光素子

Applications Claiming Priority (1)

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JP2004069278A JP4635458B2 (ja) 2004-03-11 2004-03-11 半導体発光素子

Publications (3)

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JP2005259971A JP2005259971A (ja) 2005-09-22
JP2005259971A5 JP2005259971A5 (https=) 2007-04-26
JP4635458B2 true JP4635458B2 (ja) 2011-02-23

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JP2004069278A Expired - Lifetime JP4635458B2 (ja) 2004-03-11 2004-03-11 半導体発光素子

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JP (1) JP4635458B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140050246A (ko) * 2012-10-19 2014-04-29 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5032138B2 (ja) * 2007-01-26 2012-09-26 株式会社アルバック 発光ダイオード素子の製造方法
JP5332882B2 (ja) 2009-04-30 2013-11-06 豊田合成株式会社 半導体発光素子
JP2016513882A (ja) * 2013-03-13 2016-05-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 多孔質の反射性コンタクトを作製する方法及び装置
JP7300603B2 (ja) 2020-11-17 2023-06-30 日亜化学工業株式会社 発光素子及び発光素子の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2685086B2 (ja) * 1991-12-09 1997-12-03 沖電気工業株式会社 アクティブマトリックス液晶ディスプレイの下基板の製造方法
JPH0773738A (ja) * 1993-08-31 1995-03-17 Sharp Corp 透明導電膜およびその製造方法
JPH07162035A (ja) * 1993-12-09 1995-06-23 Ricoh Co Ltd 発光ダイオード
JPH1069984A (ja) * 1996-06-18 1998-03-10 Mitsui Petrochem Ind Ltd 有機エレクトロルミネッセンス素子
JPH10112337A (ja) * 1996-08-09 1998-04-28 Nikon Corp 湿式太陽電池
JPH10341039A (ja) * 1997-04-10 1998-12-22 Toshiba Corp 半導体発光素子およびその製造方法
JPH11335815A (ja) * 1998-05-20 1999-12-07 Nippon Sheet Glass Co Ltd 透明導電膜付き基板および成膜装置
JP3479023B2 (ja) * 1999-05-18 2003-12-15 シャープ株式会社 電気配線の製造方法および配線基板および表示装置および画像検出器
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP2003168571A (ja) * 2001-11-29 2003-06-13 Ulvac Japan Ltd 有機ｅｌ素子
WO2003088273A1 (en) * 2002-04-02 2003-10-23 National Institute Of Advanced Industrial Science And Technology Porous electroconductive material having light transmitting property
JP4392741B2 (ja) * 2002-04-17 2010-01-06 日揮触媒化成株式会社 光電気セル

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140050246A (ko) * 2012-10-19 2014-04-29 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR101976450B1 (ko) 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지

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Publication number Publication date
JP2005259971A (ja) 2005-09-22

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