JP4632287B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
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- JP4632287B2 JP4632287B2 JP2003346500A JP2003346500A JP4632287B2 JP 4632287 B2 JP4632287 B2 JP 4632287B2 JP 2003346500 A JP2003346500 A JP 2003346500A JP 2003346500 A JP2003346500 A JP 2003346500A JP 4632287 B2 JP4632287 B2 JP 4632287B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Dram (AREA)
Description
CHIP…半導体基板(チップ)、DRAM0〜DRAM7…DRAMマクロセル、DFT…DFT回路、SRAM0〜SRAM7…SRAMマクロセル、LC…論理部、PAD…パッド、IOC…入出力セル、
SA…センスアンプ、SWD…サブワードドライバ、Q1〜Q33…MOSFET。
Claims (9)
- 第1導電型MOSFETのゲートと第2導電型MOSFETのゲートとが共通接続されて第1入力端子とされ、第1導電型MOSFETのソースが第2入力端子とされ、上記第2導電型MOSFETのソースに回路の接地電位が与えられ、上記第1導電型MOSFETのドレインと第2導電型MOSFETのドレインとが共通接続されて出力端子とされてなる第1回路を複数個備え、
上記第1導電型MOSFETは、1つ分のゲート電極をもって方形状にされ、
上記第2導電型MOSFETは、2個分のMOSFETのゲート電極が方形状となるよう配置され、その中央部に設けられた分離領域によりそれぞれのソース,ドレイン領域が形成されるアクティブ領域が分離されて1個分のMOSFETのゲート電極がコの字状にされ、
上記方形状のゲート電極は、互いに等しいピッチで配列され、
上記複数個の第1回路の第1入力端子は、上記ゲート電極を構成する配線層により相互に接続されてなることを特徴とする半導体集積回路装置。 - 請求項1において、
上記第1導電型はPチャネル型であり、上記第2導電型はNチャネル型であることを特徴とする半導体集積回路装置。 - 請求項1又は2において、
上記第1回路は、その出力端子がサブワード線に接続され、第1入力端子がメインワード線に接続され、第2入力端子がサブワード選択線に接続されてサブワードドライバを構成するものであり、
上記サブワード線にはそれと交差するビット線が設けられており、
上記サブワード線と上記ビット線の交点にはメモリセルが配置されてなることを特徴とする半導体集積回路装置。 - 請求項3において、
上記メインワード線には、その延長方向に複数のサブアレイが配置され、
上記サブアレイの両側には上記サブワードドライバが設けられ、
上記サブワードドライバは、それを中心にして両側に設けられるサブアレイのサブワード線の選択動作を行うものであることを特徴とする半導体集積回路装置。 - 請求項4において、
上記サブワードドライバは、4本のサブワード線に対応したものが1組とされ、
上記1組のサブワードドライバの共通化された第1入力端子はメインワード線に接続され、
上記1組のサブワードドライバの第2入力端子は、それぞれのサブワード線に対応したサブワード選択線に接続されるものであることを特徴とする半導体集積回路装置。 - 請求項5において、
サブワードドライバ領域の中央部にワード線延長方向に4個のPチャネルMOSFETが直列に配置され、
上記直列に配置された4個のPチャネルMOSFETの両側にそれぞれ2個のNチャネルMOSFETが配置され、
上記NチャネルMOSFETは、上記サブアレイのメモリセルと同じウェル領域に形成されるものであることを特徴とする半導体集積回路装置。 - 請求項6において、
上記PチャネルMOSFETとNチャネルMOSFETの共通化されたゲートとメインワード線とを接続するコンタクト部は、上記PチャネルMOSFETが形成されるウェル領域とNチャネルMOSFETが形成されるウェル領域とを分離するためのウェル分離領域上に配置されてなることを特徴とする半導体集積回路装置。 - 請求項5において、
上記MOSFETのゲート電極を相互に接続するゲート引き出し部は、ドレインと接続されるコンタクトとの関係で互いに対称的になるように配置されてなることを特徴とする半導体集積回路装置。 - 請求項8において、
上記直列に配置される4個のPチャネルMOSFET及び4個のNチャネルMOSFETのドレインのコンタクトがそれぞれ4本の直線上に並ぶように配置されてなり、
上記4本の直線上に上記サブワードドライバとそれに対応したサブワード線とを接続する出力配線が形成されるものであることを特徴とする半導体集積回路装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003346500A JP4632287B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体集積回路装置 |
US10/957,712 US7016214B2 (en) | 2003-10-06 | 2004-10-05 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2003346500A JP4632287B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体集積回路装置 |
Publications (2)
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JP2005116654A JP2005116654A (ja) | 2005-04-28 |
JP4632287B2 true JP4632287B2 (ja) | 2011-02-16 |
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JP2003346500A Expired - Fee Related JP4632287B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体集積回路装置 |
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JP (1) | JP4632287B2 (ja) |
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KR20120089128A (ko) * | 2011-02-01 | 2012-08-09 | 삼성전자주식회사 | 반도체 소자 |
KR101857729B1 (ko) * | 2011-06-17 | 2018-06-20 | 삼성전자주식회사 | 반도체 장치 |
KR102355558B1 (ko) * | 2014-07-31 | 2022-01-27 | 삼성전자주식회사 | 이미지 센서 |
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JP2002118176A (ja) * | 2000-10-05 | 2002-04-19 | Nec Corp | 半導体装置 |
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US20050077582A1 (en) | 2005-04-14 |
JP2005116654A (ja) | 2005-04-28 |
US7016214B2 (en) | 2006-03-21 |
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