JP4619490B2 - 半導体装置の検査方法 - Google Patents

半導体装置の検査方法 Download PDF

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Publication number
JP4619490B2
JP4619490B2 JP2000183809A JP2000183809A JP4619490B2 JP 4619490 B2 JP4619490 B2 JP 4619490B2 JP 2000183809 A JP2000183809 A JP 2000183809A JP 2000183809 A JP2000183809 A JP 2000183809A JP 4619490 B2 JP4619490 B2 JP 4619490B2
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Japan
Prior art keywords
semiconductor film
crystalline semiconductor
substrate
crystalline
film
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Expired - Fee Related
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JP2000183809A
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English (en)
Japanese (ja)
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JP2002005857A (ja
JP2002005857A5 (enExample
Inventor
舜平 山崎
亨 三津木
健司 笠原
勇臣 浅見
圭恵 高野
武司 志知
千穂 小久保
康行 荒井
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000183809A priority Critical patent/JP4619490B2/ja
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Publication of JP2002005857A5 publication Critical patent/JP2002005857A5/ja
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000183809A 2000-06-19 2000-06-19 半導体装置の検査方法 Expired - Fee Related JP4619490B2 (ja)

Priority Applications (1)

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JP2000183809A JP4619490B2 (ja) 2000-06-19 2000-06-19 半導体装置の検査方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000183809A JP4619490B2 (ja) 2000-06-19 2000-06-19 半導体装置の検査方法

Publications (3)

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JP2002005857A JP2002005857A (ja) 2002-01-09
JP2002005857A5 JP2002005857A5 (enExample) 2007-08-23
JP4619490B2 true JP4619490B2 (ja) 2011-01-26

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JP2000183809A Expired - Fee Related JP4619490B2 (ja) 2000-06-19 2000-06-19 半導体装置の検査方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108375595B (zh) * 2018-02-27 2020-09-01 北京工商大学 金属工件表面应力沿深度方向分布的测试方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4674937B2 (ja) * 2000-08-02 2011-04-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7132651B2 (en) * 2004-04-23 2006-11-07 Framatome Anp, Inc. In-situ BWR and PWR CRUD flake analysis method and tool
JP4616612B2 (ja) * 2004-10-14 2011-01-19 日本電子株式会社 反射電子線検出装置
JP4833905B2 (ja) * 2007-04-13 2011-12-07 新日本製鐵株式会社 結晶方位決定装置
JP2011122947A (ja) * 2009-12-10 2011-06-23 Denki Kagaku Kogyo Kk 結晶方位分布の偏りの解析方法
US8450123B2 (en) * 2010-08-27 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Oxygen diffusion evaluation method of oxide film stacked body
JP2019054065A (ja) 2017-09-13 2019-04-04 株式会社ディスコ 半導体基板の評価方法及びデバイスチップの評価方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010252B2 (ja) * 1977-06-24 1985-03-15 富士通株式会社 透過電子顕微鏡用試料作成方法
JP2764600B2 (ja) * 1989-02-16 1998-06-11 宣夫 御子柴 反射電子線回折装置
JP2670395B2 (ja) * 1991-08-14 1997-10-29 財団法人国際超電導産業技術研究センター 表面分析装置
JP3213417B2 (ja) * 1992-12-22 2001-10-02 キヤノン株式会社 薄膜分析方法
JP3146113B2 (ja) * 1994-08-30 2001-03-12 シャープ株式会社 薄膜トランジスタの製造方法および液晶表示装置
KR970007379A (ko) * 1995-07-19 1997-02-21 김주용 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법
JP2790109B2 (ja) * 1996-02-02 1998-08-27 日本電気株式会社 裏面からの成分分析の試料作成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108375595B (zh) * 2018-02-27 2020-09-01 北京工商大学 金属工件表面应力沿深度方向分布的测试方法

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