KR970007379A - 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법 - Google Patents

패턴층이 형성된 웨이퍼의 결함 다이 검사 방법 Download PDF

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Publication number
KR970007379A
KR970007379A KR1019950021183A KR19950021183A KR970007379A KR 970007379 A KR970007379 A KR 970007379A KR 1019950021183 A KR1019950021183 A KR 1019950021183A KR 19950021183 A KR19950021183 A KR 19950021183A KR 970007379 A KR970007379 A KR 970007379A
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KR
South Korea
Prior art keywords
wafer
defect
etching
die
inspection method
Prior art date
Application number
KR1019950021183A
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English (en)
Inventor
구정회
박두진
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950021183A priority Critical patent/KR970007379A/ko
Priority to TW085108640A priority patent/TW299481B/zh
Priority to CN96112227A priority patent/CN1079584C/zh
Priority to JP8209245A priority patent/JP2715290B2/ja
Priority to DE19629251A priority patent/DE19629251B4/de
Priority to US08/684,454 priority patent/US5849642A/en
Publication of KR970007379A publication Critical patent/KR970007379A/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873—Cutting or cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Biochemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Weting (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

본 발명은 반도체 소자가 형성된 웨이퍼 상태에서 결함이 있는 해당 다이만을 검사하는 결함 조사방법에 관한 것이다.
이와같은 본 발명의 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법은 결함이 있는 층을 상부에 갖는 웨이퍼의 결함이 있는 다이 뒷면으로부터 앞면쪽으로 직경이 감소하도록 결함이 러프하게 노출될 때까지 연마하는 과정과, 연마부위에 남은 실리콘 잔류물을 습식식각하는 과정으로 이루어지는 것을 특징으로 한다.

Description

패턴층이 형성된 웨이퍼의 결함 다이 검사 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도의 (가) 내지 (다)는 종래 기술에 따른 결함 조사용 시편의 제작방법을 설명하기 위한 흐름도, 제2도의 (가)와 (나)는 본 발명의 기술에 따른 결함 조사용 시편의 제작방법을 설명하기 위한 흐름도, 제3도는 제2도의 방법으로 접촉면에 공공 결함이 존재하는 경우에 있어서, 후면의 주사 전자 현미경 사진으로서, (가)도면은 디램에서 정렬 불량을 나타낸 것이고, (나)도면은 콘택 보이드의 결함을 도시한 것이다.

Claims (4)

  1. 결함이 있는 층을 상부에 갖는 웨이퍼의 결함이 있는 다이 뒷면으로부터 앞면쪽으로 직겨이 감소하도록 결함이 러프하게 노출될 때까지 기계적으로 연마하는 과정과, 상기 과정후, 연마부위에 남은 실리콘 잔류물을 식각하는 과정으로 이루어지는 것을 특징으로 하는 패턴층이 형성된 웨이퍼의 결함 다이 검사방법.
  2. 제1항에 있어서, 상기 식각과정은 거친 식각과 미세 식각의 두 단계로 이루어지는 것을 특징으로 하는 패턴층이 형성된 웨이퍼의 결함 다이 검사방법.
  3. 제2항에 있어서, 상기 거친 식각은 묽은 KOH 용액에서 행하는 것을 특징으로 하는 패턴층이 형성된 웨이퍼의 결함 다이 검사방법.
  4. 제2항에 있어서, 상기 미세 식각은 HF, HNO3와 CH3COOH를 혼합한 용액에서 행하는 것을 특징으로 하는 패턴층이 형성된 웨이퍼의 결함 다이 검사방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950021183A 1995-07-19 1995-07-19 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법 KR970007379A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019950021183A KR970007379A (ko) 1995-07-19 1995-07-19 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법
TW085108640A TW299481B (ko) 1995-07-19 1996-07-16
CN96112227A CN1079584C (zh) 1995-07-19 1996-07-19 用于半导体器件缺陷调查试验片的制造方法
JP8209245A JP2715290B2 (ja) 1995-07-19 1996-07-19 半導体素子の欠陥調査用試験片の製造方法
DE19629251A DE19629251B4 (de) 1995-07-19 1996-07-19 Verfahren zum Herstellen von Proben zur Analyse von Defekten von Halbleitereinrichtungen
US08/684,454 US5849642A (en) 1995-07-19 1996-07-19 Method of fabricating specimen for exposing defects of a semiconductor device for observation and analysis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950021183A KR970007379A (ko) 1995-07-19 1995-07-19 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법

Publications (1)

Publication Number Publication Date
KR970007379A true KR970007379A (ko) 1997-02-21

Family

ID=19420914

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950021183A KR970007379A (ko) 1995-07-19 1995-07-19 패턴층이 형성된 웨이퍼의 결함 다이 검사 방법

Country Status (6)

Country Link
US (1) US5849642A (ko)
JP (1) JP2715290B2 (ko)
KR (1) KR970007379A (ko)
CN (1) CN1079584C (ko)
DE (1) DE19629251B4 (ko)
TW (1) TW299481B (ko)

Families Citing this family (8)

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Publication number Priority date Publication date Assignee Title
US5821549A (en) * 1997-03-03 1998-10-13 Schlumberger Technologies, Inc. Through-the-substrate investigation of flip-chip IC's
US6288411B1 (en) * 1999-09-15 2001-09-11 Advanced Micro Devices, Inc. Defect collecting structures for photolithography
KR100297738B1 (ko) * 1999-10-07 2001-11-02 윤종용 챔퍼가 형성된 금속 실리사이드층을 갖춘 반도체소자의 제조방법
JP4619490B2 (ja) * 2000-06-19 2011-01-26 株式会社半導体エネルギー研究所 半導体装置の検査方法
CN101996911B (zh) * 2009-08-26 2012-06-20 中芯国际集成电路制造(上海)有限公司 对栅氧化层进行失效分析的方法
GB2480104A (en) * 2010-05-07 2011-11-09 Plastic Logic Ltd Device analysis
US9735066B2 (en) * 2014-01-30 2017-08-15 Fei Company Surface delayering with a programmed manipulator
CN110554063B (zh) * 2019-10-21 2021-10-12 长江存储科技有限责任公司 一种tem样品以及制备tem样品的方法

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US3724066A (en) * 1968-09-20 1973-04-03 Horizons Inc Light amplifiers
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
US4510673A (en) * 1983-06-23 1985-04-16 International Business Machines Corporation Laser written chip identification method
JPS62128134A (ja) * 1985-11-29 1987-06-10 Toshiba Corp 半導体ウエハの表面検査装置
DD265466A1 (de) * 1987-10-01 1989-03-01 Werk Fernsehelektronik Veb Verfahren zur praeparation von halbleiterbauelementen fuer rasterelektronenmikroskopische fehleranalysen
JP2811073B2 (ja) * 1988-11-01 1998-10-15 セイコーインスツルメンツ株式会社 断面加工観察装置
US5131752A (en) * 1990-06-28 1992-07-21 Tamarack Scientific Co., Inc. Method for film thickness endpoint control
GB2282480B (en) * 1990-07-05 1995-07-26 Olivetti Systems & Networks S Integrated circuit structure analysis
US5214283A (en) * 1991-07-23 1993-05-25 Sgs-Thomson Microelectronics, Inc. Method of determining the cause of open-via failures in an integrated circuit
KR960005099B1 (ko) * 1992-12-30 1996-04-20 현대전자산업주식회사 반도체 소자의 다층폴리구조의 층간 불량분석 방법
BE1007675A3 (nl) * 1993-10-28 1995-09-12 Philips Electronics Nv Werkwijze voor het vervaardigen van preparaten voor een elektronenmicroscoop.

Also Published As

Publication number Publication date
CN1156331A (zh) 1997-08-06
CN1079584C (zh) 2002-02-20
DE19629251B4 (de) 2004-10-14
TW299481B (ko) 1997-03-01
JP2715290B2 (ja) 1998-02-18
DE19629251A1 (de) 1997-01-23
US5849642A (en) 1998-12-15
JPH09219430A (ja) 1997-08-19

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