JP4618261B2 - 窒化物半導体素子及びその製造方法 - Google Patents

窒化物半導体素子及びその製造方法 Download PDF

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JP4618261B2
JP4618261B2 JP2007068285A JP2007068285A JP4618261B2 JP 4618261 B2 JP4618261 B2 JP 4618261B2 JP 2007068285 A JP2007068285 A JP 2007068285A JP 2007068285 A JP2007068285 A JP 2007068285A JP 4618261 B2 JP4618261 B2 JP 4618261B2
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layer
film
nitride semiconductor
ridge
electrode
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JP2007150373A5 (enExample
JP2007150373A (ja
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章法 米田
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Nichia Corp
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Nichia Corp
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JP2007068285A 2007-03-16 2007-03-16 窒化物半導体素子及びその製造方法 Expired - Fee Related JP4618261B2 (ja)

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JP2007068285A JP4618261B2 (ja) 2007-03-16 2007-03-16 窒化物半導体素子及びその製造方法

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JP2007068285A JP4618261B2 (ja) 2007-03-16 2007-03-16 窒化物半導体素子及びその製造方法

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JP2004167350A Division JP3982521B2 (ja) 2004-06-04 2004-06-04 窒化物半導体素子及びその製造方法

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JP2007150373A JP2007150373A (ja) 2007-06-14
JP2007150373A5 JP2007150373A5 (enExample) 2007-07-26
JP4618261B2 true JP4618261B2 (ja) 2011-01-26

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5722082B2 (ja) * 2011-03-07 2015-05-20 ウシオオプトセミコンダクター株式会社 窒化物半導体レーザ装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08340156A (ja) * 1995-06-13 1996-12-24 Seiko Epson Corp 面発光型半導体レーザ
JP4040192B2 (ja) * 1998-11-26 2008-01-30 ソニー株式会社 半導体発光素子の製造方法
JP2000299528A (ja) * 1999-04-12 2000-10-24 Nec Corp 半導体レーザおよびその製造方法
JP2001156398A (ja) * 1999-05-19 2001-06-08 Canon Inc 半導体素子の製造方法、半導体素子、及びジャイロ
JP2002261380A (ja) * 2000-12-27 2002-09-13 Furukawa Electric Co Ltd:The 半導体装置およびその製造方法
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法
JP2003243773A (ja) * 2003-03-04 2003-08-29 Sony Corp 半導体発光素子の製造方法および半導体発光素子
JP3982521B2 (ja) * 2004-06-04 2007-09-26 日亜化学工業株式会社 窒化物半導体素子及びその製造方法

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