JP2007150373A5 - - Google Patents
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- Publication number
- JP2007150373A5 JP2007150373A5 JP2007068285A JP2007068285A JP2007150373A5 JP 2007150373 A5 JP2007150373 A5 JP 2007150373A5 JP 2007068285 A JP2007068285 A JP 2007068285A JP 2007068285 A JP2007068285 A JP 2007068285A JP 2007150373 A5 JP2007150373 A5 JP 2007150373A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- nitride semiconductor
- ridge
- type nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 26
- 150000004767 nitrides Chemical class 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000007772 electrode material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000002356 single layer Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007068285A JP4618261B2 (ja) | 2007-03-16 | 2007-03-16 | 窒化物半導体素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007068285A JP4618261B2 (ja) | 2007-03-16 | 2007-03-16 | 窒化物半導体素子及びその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004167350A Division JP3982521B2 (ja) | 2004-06-04 | 2004-06-04 | 窒化物半導体素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007150373A JP2007150373A (ja) | 2007-06-14 |
| JP2007150373A5 true JP2007150373A5 (enExample) | 2007-07-26 |
| JP4618261B2 JP4618261B2 (ja) | 2011-01-26 |
Family
ID=38211295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007068285A Expired - Fee Related JP4618261B2 (ja) | 2007-03-16 | 2007-03-16 | 窒化物半導体素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4618261B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5722082B2 (ja) * | 2011-03-07 | 2015-05-20 | ウシオオプトセミコンダクター株式会社 | 窒化物半導体レーザ装置の製造方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08340156A (ja) * | 1995-06-13 | 1996-12-24 | Seiko Epson Corp | 面発光型半導体レーザ |
| JP4040192B2 (ja) * | 1998-11-26 | 2008-01-30 | ソニー株式会社 | 半導体発光素子の製造方法 |
| JP2000299528A (ja) * | 1999-04-12 | 2000-10-24 | Nec Corp | 半導体レーザおよびその製造方法 |
| JP2001156398A (ja) * | 1999-05-19 | 2001-06-08 | Canon Inc | 半導体素子の製造方法、半導体素子、及びジャイロ |
| JP2002261380A (ja) * | 2000-12-27 | 2002-09-13 | Furukawa Electric Co Ltd:The | 半導体装置およびその製造方法 |
| JP4388720B2 (ja) * | 2001-10-12 | 2009-12-24 | 住友電気工業株式会社 | 半導体発光素子の製造方法 |
| JP2003243773A (ja) * | 2003-03-04 | 2003-08-29 | Sony Corp | 半導体発光素子の製造方法および半導体発光素子 |
| JP3982521B2 (ja) * | 2004-06-04 | 2007-09-26 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
-
2007
- 2007-03-16 JP JP2007068285A patent/JP4618261B2/ja not_active Expired - Fee Related
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