JP2013512582A5 - - Google Patents
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- Publication number
- JP2013512582A5 JP2013512582A5 JP2012542005A JP2012542005A JP2013512582A5 JP 2013512582 A5 JP2013512582 A5 JP 2013512582A5 JP 2012542005 A JP2012542005 A JP 2012542005A JP 2012542005 A JP2012542005 A JP 2012542005A JP 2013512582 A5 JP2013512582 A5 JP 2013512582A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- polycrystalline
- layer
- manufacturing
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000463 material Substances 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000003989 dielectric material Substances 0.000 claims description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 238000002679 ablation Methods 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26565209P | 2009-12-01 | 2009-12-01 | |
| US61/265,652 | 2009-12-01 | ||
| US12/895,437 | 2010-09-30 | ||
| US12/895,437 US8324015B2 (en) | 2009-12-01 | 2010-09-30 | Solar cell contact formation using laser ablation |
| PCT/US2010/051178 WO2011068590A2 (en) | 2009-12-01 | 2010-10-01 | Solar cell contact formation using laser ablation |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015075493A Division JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013512582A JP2013512582A (ja) | 2013-04-11 |
| JP2013512582A5 true JP2013512582A5 (enExample) | 2013-08-29 |
| JP5726892B2 JP5726892B2 (ja) | 2015-06-03 |
Family
ID=44067930
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012542005A Active JP5726892B2 (ja) | 2009-12-01 | 2010-10-01 | レーザアブレーションを利用する、太陽電池のコンタクトの形成 |
| JP2015075493A Active JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
| JP2017019684A Active JP6648358B2 (ja) | 2009-12-01 | 2017-02-06 | 太陽電池 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015075493A Active JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
| JP2017019684A Active JP6648358B2 (ja) | 2009-12-01 | 2017-02-06 | 太陽電池 |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US8324015B2 (enExample) |
| EP (3) | EP2507844B1 (enExample) |
| JP (3) | JP5726892B2 (enExample) |
| CN (2) | CN102640300B (enExample) |
| MY (1) | MY155779A (enExample) |
| PH (1) | PH12012500956A1 (enExample) |
| WO (1) | WO2011068590A2 (enExample) |
Families Citing this family (39)
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| US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| US8324015B2 (en) * | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
| WO2012092301A2 (en) * | 2010-12-29 | 2012-07-05 | Intevac, Inc. | Method and apparatus for masking substrates for deposition |
| US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
| US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
| EP2579317A1 (en) * | 2011-10-07 | 2013-04-10 | Total SA | Method of manufacturing a solar cell with local back contacts |
| WO2013062741A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Back contact through-holes formation process for solar cell fabrication |
| US20130199606A1 (en) * | 2012-02-06 | 2013-08-08 | Applied Materials, Inc. | Methods of manufacturing back surface field and metallized contacts on a solar cell device |
| DE102012205966A1 (de) * | 2012-04-12 | 2013-10-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Dünnschicht-Solarmoduls |
| CN105190903B (zh) * | 2013-03-15 | 2017-07-14 | 太阳能公司 | 太阳能电池降低的接触电阻及延长的寿命 |
| EP4092757A1 (en) | 2013-04-03 | 2022-11-23 | Lg Electronics Inc. | Method for fabricating a solar cell |
| KR101613843B1 (ko) * | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| US9768343B2 (en) * | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
| KR102045001B1 (ko) * | 2013-06-05 | 2019-12-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101622089B1 (ko) * | 2013-07-05 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101620431B1 (ko) * | 2014-01-29 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101569415B1 (ko) | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| JP6219913B2 (ja) | 2014-11-28 | 2017-10-25 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| US10535790B2 (en) * | 2015-06-25 | 2020-01-14 | Sunpower Corporation | One-dimensional metallization for solar cells |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR102600379B1 (ko) * | 2015-12-21 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지와 그 제조 방법 |
| KR102526398B1 (ko) * | 2016-01-12 | 2023-04-27 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
| US20170236972A1 (en) * | 2016-02-12 | 2017-08-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
| US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
| USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
| USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
| USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
| USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
| USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
| USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
| KR102350960B1 (ko) * | 2019-04-25 | 2022-01-14 | 엘지전자 주식회사 | 태양전지의 제조 방법 |
| US12329704B2 (en) | 2021-08-23 | 2025-06-17 | Medline Industries, Lp | Absorbent repositioning pad and method |
| CN117954512A (zh) | 2023-10-09 | 2024-04-30 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
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| JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
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| JP2798769B2 (ja) * | 1990-02-22 | 1998-09-17 | 三洋電機株式会社 | 薄膜トランジスタの製造方法 |
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| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
| US8242354B2 (en) | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| CN101447518A (zh) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | 一种背点接触异质结太阳能电池及其制造方法 |
| EP2422374A4 (en) | 2009-04-21 | 2016-09-14 | Tetrasun Inc | METHOD FOR PRODUCING STRUCTURES FOR A SOLAR CELL |
| EP2422377A4 (en) | 2009-04-22 | 2013-12-04 | Tetrasun Inc | Localized metal contacts by localized laser assisted conversion of functional films in solar cells |
| US8324015B2 (en) | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
| WO2013062741A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Back contact through-holes formation process for solar cell fabrication |
| DE102012205966A1 (de) | 2012-04-12 | 2013-10-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Dünnschicht-Solarmoduls |
| CN105190903B (zh) | 2013-03-15 | 2017-07-14 | 太阳能公司 | 太阳能电池降低的接触电阻及延长的寿命 |
| US9768343B2 (en) | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
-
2010
- 2010-09-30 US US12/895,437 patent/US8324015B2/en active Active
- 2010-10-01 WO PCT/US2010/051178 patent/WO2011068590A2/en not_active Ceased
- 2010-10-01 MY MYPI2012002257A patent/MY155779A/en unknown
- 2010-10-01 CN CN201080054693.2A patent/CN102640300B/zh active Active
- 2010-10-01 EP EP10834898.8A patent/EP2507844B1/en active Active
- 2010-10-01 EP EP20165212.0A patent/EP3723141B1/en active Active
- 2010-10-01 EP EP23210934.8A patent/EP4300598B1/en active Active
- 2010-10-01 PH PH1/2012/500956A patent/PH12012500956A1/en unknown
- 2010-10-01 CN CN201710165852.XA patent/CN107134498B/zh active Active
- 2010-10-01 JP JP2012542005A patent/JP5726892B2/ja active Active
-
2012
- 2012-11-05 US US13/669,147 patent/US8785236B2/en active Active
-
2014
- 2014-07-17 US US14/334,401 patent/US9087939B2/en active Active
-
2015
- 2015-04-01 JP JP2015075493A patent/JP6089058B2/ja active Active
- 2015-07-07 US US14/793,356 patent/US10211349B2/en active Active
-
2017
- 2017-02-06 JP JP2017019684A patent/JP6648358B2/ja active Active
-
2019
- 2019-02-14 US US16/276,381 patent/US11152518B2/en active Active
-
2021
- 2021-10-12 US US17/498,979 patent/US12191404B2/en active Active
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