JP5726892B2 - レーザアブレーションを利用する、太陽電池のコンタクトの形成 - Google Patents
レーザアブレーションを利用する、太陽電池のコンタクトの形成 Download PDFInfo
- Publication number
- JP5726892B2 JP5726892B2 JP2012542005A JP2012542005A JP5726892B2 JP 5726892 B2 JP5726892 B2 JP 5726892B2 JP 2012542005 A JP2012542005 A JP 2012542005A JP 2012542005 A JP2012542005 A JP 2012542005A JP 5726892 B2 JP5726892 B2 JP 5726892B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- layer
- polycrystalline
- material layer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000608 laser ablation Methods 0.000 title claims description 11
- 230000015572 biosynthetic process Effects 0.000 title description 15
- 239000000463 material Substances 0.000 claims description 83
- 239000000758 substrate Substances 0.000 claims description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 56
- 238000004519 manufacturing process Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 46
- 239000003989 dielectric material Substances 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 28
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 238000002679 ablation Methods 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008832 photodamage Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
- H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26565209P | 2009-12-01 | 2009-12-01 | |
| US61/265,652 | 2009-12-01 | ||
| US12/895,437 | 2010-09-30 | ||
| US12/895,437 US8324015B2 (en) | 2009-12-01 | 2010-09-30 | Solar cell contact formation using laser ablation |
| PCT/US2010/051178 WO2011068590A2 (en) | 2009-12-01 | 2010-10-01 | Solar cell contact formation using laser ablation |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015075493A Division JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013512582A JP2013512582A (ja) | 2013-04-11 |
| JP2013512582A5 JP2013512582A5 (enExample) | 2013-08-29 |
| JP5726892B2 true JP5726892B2 (ja) | 2015-06-03 |
Family
ID=44067930
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012542005A Active JP5726892B2 (ja) | 2009-12-01 | 2010-10-01 | レーザアブレーションを利用する、太陽電池のコンタクトの形成 |
| JP2015075493A Active JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
| JP2017019684A Active JP6648358B2 (ja) | 2009-12-01 | 2017-02-06 | 太陽電池 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015075493A Active JP6089058B2 (ja) | 2009-12-01 | 2015-04-01 | 太陽電池の製造方法 |
| JP2017019684A Active JP6648358B2 (ja) | 2009-12-01 | 2017-02-06 | 太陽電池 |
Country Status (7)
| Country | Link |
|---|---|
| US (6) | US8324015B2 (enExample) |
| EP (3) | EP2507844B1 (enExample) |
| JP (3) | JP5726892B2 (enExample) |
| CN (2) | CN102640300B (enExample) |
| MY (1) | MY155779A (enExample) |
| PH (1) | PH12012500956A1 (enExample) |
| WO (1) | WO2011068590A2 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170005206A1 (en) * | 2007-10-06 | 2017-01-05 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| US8324015B2 (en) * | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
| WO2012092301A2 (en) * | 2010-12-29 | 2012-07-05 | Intevac, Inc. | Method and apparatus for masking substrates for deposition |
| US8658458B2 (en) * | 2011-06-15 | 2014-02-25 | Varian Semiconductor Equipment Associates, Inc. | Patterned doping for polysilicon emitter solar cells |
| US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
| EP2579317A1 (en) * | 2011-10-07 | 2013-04-10 | Total SA | Method of manufacturing a solar cell with local back contacts |
| WO2013062741A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Back contact through-holes formation process for solar cell fabrication |
| US20130199606A1 (en) * | 2012-02-06 | 2013-08-08 | Applied Materials, Inc. | Methods of manufacturing back surface field and metallized contacts on a solar cell device |
| DE102012205966A1 (de) * | 2012-04-12 | 2013-10-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Dünnschicht-Solarmoduls |
| CN105190903B (zh) * | 2013-03-15 | 2017-07-14 | 太阳能公司 | 太阳能电池降低的接触电阻及延长的寿命 |
| EP4092757A1 (en) | 2013-04-03 | 2022-11-23 | Lg Electronics Inc. | Method for fabricating a solar cell |
| KR101613843B1 (ko) * | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| US9768343B2 (en) * | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
| KR102045001B1 (ko) * | 2013-06-05 | 2019-12-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101622089B1 (ko) * | 2013-07-05 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101620431B1 (ko) * | 2014-01-29 | 2016-05-12 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR101569415B1 (ko) | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| KR102219804B1 (ko) | 2014-11-04 | 2021-02-24 | 엘지전자 주식회사 | 태양 전지 및 그의 제조 방법 |
| JP6219913B2 (ja) | 2014-11-28 | 2017-10-25 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
| US10535790B2 (en) * | 2015-06-25 | 2020-01-14 | Sunpower Corporation | One-dimensional metallization for solar cells |
| KR102272433B1 (ko) | 2015-06-30 | 2021-07-05 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| KR102600379B1 (ko) * | 2015-12-21 | 2023-11-10 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지와 그 제조 방법 |
| KR102526398B1 (ko) * | 2016-01-12 | 2023-04-27 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
| US20170236972A1 (en) * | 2016-02-12 | 2017-08-17 | Lg Electronics Inc. | Solar cell and method of manufacturing the same |
| USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
| US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
| USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
| USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
| USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
| USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
| USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
| USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
| USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
| USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
| USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
| KR102350960B1 (ko) * | 2019-04-25 | 2022-01-14 | 엘지전자 주식회사 | 태양전지의 제조 방법 |
| US12329704B2 (en) | 2021-08-23 | 2025-06-17 | Medline Industries, Lp | Absorbent repositioning pad and method |
| CN117954512A (zh) | 2023-10-09 | 2024-04-30 | 晶科能源(海宁)有限公司 | 太阳能电池及光伏组件 |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4626613A (en) * | 1983-12-23 | 1986-12-02 | Unisearch Limited | Laser grooved solar cell |
| US4900695A (en) * | 1986-12-17 | 1990-02-13 | Hitachi, Ltd. | Semiconductor integrated circuit device and process for producing the same |
| JP2706113B2 (ja) * | 1988-11-25 | 1998-01-28 | 工業技術院長 | 光電変換素子 |
| US5053083A (en) * | 1989-05-08 | 1991-10-01 | The Board Of Trustees Of The Leland Stanford Junior University | Bilevel contact solar cells |
| US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| JP2798769B2 (ja) * | 1990-02-22 | 1998-09-17 | 三洋電機株式会社 | 薄膜トランジスタの製造方法 |
| US5258077A (en) * | 1991-09-13 | 1993-11-02 | Solec International, Inc. | High efficiency silicon solar cells and method of fabrication |
| US5738731A (en) * | 1993-11-19 | 1998-04-14 | Mega Chips Corporation | Photovoltaic device |
| US5456763A (en) * | 1994-03-29 | 1995-10-10 | The Regents Of The University Of California | Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon |
| JP3193287B2 (ja) * | 1996-02-28 | 2001-07-30 | シャープ株式会社 | 太陽電池 |
| JPH10229211A (ja) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | 光電変換装置およびその製造方法 |
| DE19741832A1 (de) * | 1997-09-23 | 1999-03-25 | Inst Solarenergieforschung | Verfahren zur Herstellung einer Solarzelle und Solarzelle |
| US6126565A (en) | 1999-03-31 | 2000-10-03 | Dana Corporation | Method for controlling flow of lubrication in axle assembly and axle assembly with selectively adjustable drain-back spacer |
| DE10046170A1 (de) * | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
| JP2003298078A (ja) | 2002-03-29 | 2003-10-17 | Ebara Corp | 光起電力素子 |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US8049669B2 (en) * | 2004-03-26 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising circuit between first and second conducting wires |
| DE102004050269A1 (de) * | 2004-10-14 | 2006-04-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle |
| US20060130891A1 (en) * | 2004-10-29 | 2006-06-22 | Carlson David E | Back-contact photovoltaic cells |
| US8129822B2 (en) * | 2006-10-09 | 2012-03-06 | Solexel, Inc. | Template for three-dimensional thin-film solar cell manufacturing and methods of use |
| US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
| US8399331B2 (en) * | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
| EP1763086A1 (en) * | 2005-09-09 | 2007-03-14 | Interuniversitair Micro-Elektronica Centrum | Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method |
| US7279362B2 (en) * | 2005-03-31 | 2007-10-09 | Intel Corporation | Semiconductor wafer coat layers and methods therefor |
| DE102005040871A1 (de) * | 2005-04-16 | 2006-10-19 | Institut Für Solarenergieforschung Gmbh | Rückkontaktierte Solarzelle und Verfahren zu deren Herstellung |
| US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US20070137692A1 (en) | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| US8084684B2 (en) * | 2006-10-09 | 2011-12-27 | Solexel, Inc. | Three-dimensional thin-film solar cells |
| JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
| US7705237B2 (en) * | 2006-11-27 | 2010-04-27 | Sunpower Corporation | Solar cell having silicon nano-particle emitter |
| US20080202577A1 (en) * | 2007-02-16 | 2008-08-28 | Henry Hieslmair | Dynamic design of solar cell structures, photovoltaic modules and corresponding processes |
| EP2135292A2 (en) * | 2007-03-16 | 2009-12-23 | BP Corporation North America Inc. | Solar cells |
| JP2008283023A (ja) | 2007-05-11 | 2008-11-20 | Mitsubishi Heavy Ind Ltd | 光電変換装置の製造方法 |
| JP5230153B2 (ja) | 2007-09-18 | 2013-07-10 | 三菱重工業株式会社 | 光電変換装置の製造方法 |
| KR101293162B1 (ko) * | 2007-11-09 | 2013-08-12 | 선프림, 리미티드 | 저-비용 태양 전지 및 그 제조 방법 |
| US8198528B2 (en) * | 2007-12-14 | 2012-06-12 | Sunpower Corporation | Anti-reflective coating with high optical absorption layer for backside contact solar cells |
| US7820540B2 (en) * | 2007-12-21 | 2010-10-26 | Palo Alto Research Center Incorporated | Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells |
| WO2009094575A2 (en) * | 2008-01-24 | 2009-07-30 | Applied Materials, Inc. | Buried insulator isolation for solar cell contacts |
| US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
| KR100864062B1 (ko) * | 2008-02-22 | 2008-10-16 | 한국철강 주식회사 | 태양전지 모듈 패터닝 장치 |
| KR101155343B1 (ko) * | 2008-02-25 | 2012-06-11 | 엘지전자 주식회사 | 백 콘택 태양전지의 제조 방법 |
| US7833808B2 (en) * | 2008-03-24 | 2010-11-16 | Palo Alto Research Center Incorporated | Methods for forming multiple-layer electrode structures for silicon photovoltaic cells |
| TW201019482A (en) * | 2008-04-09 | 2010-05-16 | Applied Materials Inc | Simplified back contact for polysilicon emitter solar cells |
| CN101884116A (zh) * | 2008-04-17 | 2010-11-10 | Lg电子株式会社 | 太阳能电池及其制造方法 |
| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
| US8242354B2 (en) | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| CN101447518A (zh) * | 2008-12-31 | 2009-06-03 | 江苏艾德太阳能科技有限公司 | 一种背点接触异质结太阳能电池及其制造方法 |
| EP2422374A4 (en) | 2009-04-21 | 2016-09-14 | Tetrasun Inc | METHOD FOR PRODUCING STRUCTURES FOR A SOLAR CELL |
| EP2422377A4 (en) | 2009-04-22 | 2013-12-04 | Tetrasun Inc | Localized metal contacts by localized laser assisted conversion of functional films in solar cells |
| US8324015B2 (en) | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
| WO2013062741A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Back contact through-holes formation process for solar cell fabrication |
| DE102012205966A1 (de) | 2012-04-12 | 2013-10-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Dünnschicht-Solarmoduls |
| CN105190903B (zh) | 2013-03-15 | 2017-07-14 | 太阳能公司 | 太阳能电池降低的接触电阻及延长的寿命 |
| US9768343B2 (en) | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
-
2010
- 2010-09-30 US US12/895,437 patent/US8324015B2/en active Active
- 2010-10-01 WO PCT/US2010/051178 patent/WO2011068590A2/en not_active Ceased
- 2010-10-01 MY MYPI2012002257A patent/MY155779A/en unknown
- 2010-10-01 CN CN201080054693.2A patent/CN102640300B/zh active Active
- 2010-10-01 EP EP10834898.8A patent/EP2507844B1/en active Active
- 2010-10-01 EP EP20165212.0A patent/EP3723141B1/en active Active
- 2010-10-01 EP EP23210934.8A patent/EP4300598B1/en active Active
- 2010-10-01 PH PH1/2012/500956A patent/PH12012500956A1/en unknown
- 2010-10-01 CN CN201710165852.XA patent/CN107134498B/zh active Active
- 2010-10-01 JP JP2012542005A patent/JP5726892B2/ja active Active
-
2012
- 2012-11-05 US US13/669,147 patent/US8785236B2/en active Active
-
2014
- 2014-07-17 US US14/334,401 patent/US9087939B2/en active Active
-
2015
- 2015-04-01 JP JP2015075493A patent/JP6089058B2/ja active Active
- 2015-07-07 US US14/793,356 patent/US10211349B2/en active Active
-
2017
- 2017-02-06 JP JP2017019684A patent/JP6648358B2/ja active Active
-
2019
- 2019-02-14 US US16/276,381 patent/US11152518B2/en active Active
-
2021
- 2021-10-12 US US17/498,979 patent/US12191404B2/en active Active
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5726892B2 (ja) | レーザアブレーションを利用する、太陽電池のコンタクトの形成 | |
| CN103370801B (zh) | 用于制造太阳能电池的方法和结构 | |
| KR101740522B1 (ko) | 태양 전지와 그 제조 방법 | |
| JP2014110256A (ja) | 太陽電池セルの製造方法および太陽電池セル | |
| Harley et al. | Solar cell having a plurality of conductive contacts | |
| JP2014086587A (ja) | 太陽電池セルの製造方法および太陽電池セル | |
| JP2014112584A (ja) | 太陽電池セルの製造方法および太陽電池セル | |
| CN119630107A (zh) | 太阳能电池及其制备方法 | |
| CN121013418A (zh) | Ibc电池及其制备方法、光伏组件和发电装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130711 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130711 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140122 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140204 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140423 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140805 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150303 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150401 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5726892 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |