JP5726892B2 - レーザアブレーションを利用する、太陽電池のコンタクトの形成 - Google Patents

レーザアブレーションを利用する、太陽電池のコンタクトの形成 Download PDF

Info

Publication number
JP5726892B2
JP5726892B2 JP2012542005A JP2012542005A JP5726892B2 JP 5726892 B2 JP5726892 B2 JP 5726892B2 JP 2012542005 A JP2012542005 A JP 2012542005A JP 2012542005 A JP2012542005 A JP 2012542005A JP 5726892 B2 JP5726892 B2 JP 5726892B2
Authority
JP
Japan
Prior art keywords
forming
layer
polycrystalline
material layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012542005A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013512582A (ja
JP2013512582A5 (enExample
Inventor
ハーレイ、ガブリエル
スミス、デービッド
カズンズ、ピーター
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunPower Corp
Original Assignee
SunPower Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunPower Corp filed Critical SunPower Corp
Publication of JP2013512582A publication Critical patent/JP2013512582A/ja
Publication of JP2013512582A5 publication Critical patent/JP2013512582A5/ja
Application granted granted Critical
Publication of JP5726892B2 publication Critical patent/JP5726892B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • H10F77/935Interconnections for devices having potential barriers for photovoltaic devices or modules
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219Arrangements for electrodes of back-contact photovoltaic cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2012542005A 2009-12-01 2010-10-01 レーザアブレーションを利用する、太陽電池のコンタクトの形成 Active JP5726892B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26565209P 2009-12-01 2009-12-01
US61/265,652 2009-12-01
US12/895,437 2010-09-30
US12/895,437 US8324015B2 (en) 2009-12-01 2010-09-30 Solar cell contact formation using laser ablation
PCT/US2010/051178 WO2011068590A2 (en) 2009-12-01 2010-10-01 Solar cell contact formation using laser ablation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015075493A Division JP6089058B2 (ja) 2009-12-01 2015-04-01 太陽電池の製造方法

Publications (3)

Publication Number Publication Date
JP2013512582A JP2013512582A (ja) 2013-04-11
JP2013512582A5 JP2013512582A5 (enExample) 2013-08-29
JP5726892B2 true JP5726892B2 (ja) 2015-06-03

Family

ID=44067930

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2012542005A Active JP5726892B2 (ja) 2009-12-01 2010-10-01 レーザアブレーションを利用する、太陽電池のコンタクトの形成
JP2015075493A Active JP6089058B2 (ja) 2009-12-01 2015-04-01 太陽電池の製造方法
JP2017019684A Active JP6648358B2 (ja) 2009-12-01 2017-02-06 太陽電池

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015075493A Active JP6089058B2 (ja) 2009-12-01 2015-04-01 太陽電池の製造方法
JP2017019684A Active JP6648358B2 (ja) 2009-12-01 2017-02-06 太陽電池

Country Status (7)

Country Link
US (6) US8324015B2 (enExample)
EP (3) EP2507844B1 (enExample)
JP (3) JP5726892B2 (enExample)
CN (2) CN102640300B (enExample)
MY (1) MY155779A (enExample)
PH (1) PH12012500956A1 (enExample)
WO (1) WO2011068590A2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170005206A1 (en) * 2007-10-06 2017-01-05 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
WO2012092301A2 (en) * 2010-12-29 2012-07-05 Intevac, Inc. Method and apparatus for masking substrates for deposition
US8658458B2 (en) * 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
US8692111B2 (en) * 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
EP2579317A1 (en) * 2011-10-07 2013-04-10 Total SA Method of manufacturing a solar cell with local back contacts
WO2013062741A1 (en) * 2011-10-28 2013-05-02 Applied Materials, Inc. Back contact through-holes formation process for solar cell fabrication
US20130199606A1 (en) * 2012-02-06 2013-08-08 Applied Materials, Inc. Methods of manufacturing back surface field and metallized contacts on a solar cell device
DE102012205966A1 (de) * 2012-04-12 2013-10-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Dünnschicht-Solarmoduls
CN105190903B (zh) * 2013-03-15 2017-07-14 太阳能公司 太阳能电池降低的接触电阻及延长的寿命
EP4092757A1 (en) 2013-04-03 2022-11-23 Lg Electronics Inc. Method for fabricating a solar cell
KR101613843B1 (ko) * 2013-04-23 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US9768343B2 (en) * 2013-04-29 2017-09-19 OB Realty, LLC. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101622089B1 (ko) * 2013-07-05 2016-05-18 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101569415B1 (ko) 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
KR102219804B1 (ko) 2014-11-04 2021-02-24 엘지전자 주식회사 태양 전지 및 그의 제조 방법
JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
US10535790B2 (en) * 2015-06-25 2020-01-14 Sunpower Corporation One-dimensional metallization for solar cells
KR102272433B1 (ko) 2015-06-30 2021-07-05 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR102600379B1 (ko) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지와 그 제조 방법
KR102526398B1 (ko) * 2016-01-12 2023-04-27 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
US20170236972A1 (en) * 2016-02-12 2017-08-17 Lg Electronics Inc. Solar cell and method of manufacturing the same
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
KR102350960B1 (ko) * 2019-04-25 2022-01-14 엘지전자 주식회사 태양전지의 제조 방법
US12329704B2 (en) 2021-08-23 2025-06-17 Medline Industries, Lp Absorbent repositioning pad and method
CN117954512A (zh) 2023-10-09 2024-04-30 晶科能源(海宁)有限公司 太阳能电池及光伏组件

Family Cites Families (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626613A (en) * 1983-12-23 1986-12-02 Unisearch Limited Laser grooved solar cell
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
JP2706113B2 (ja) * 1988-11-25 1998-01-28 工業技術院長 光電変換素子
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5011565A (en) * 1989-12-06 1991-04-30 Mobil Solar Energy Corporation Dotted contact solar cell and method of making same
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5456763A (en) * 1994-03-29 1995-10-10 The Regents Of The University Of California Solar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline silicon
JP3193287B2 (ja) * 1996-02-28 2001-07-30 シャープ株式会社 太陽電池
JPH10229211A (ja) * 1997-02-18 1998-08-25 Hitachi Ltd 光電変換装置およびその製造方法
DE19741832A1 (de) * 1997-09-23 1999-03-25 Inst Solarenergieforschung Verfahren zur Herstellung einer Solarzelle und Solarzelle
US6126565A (en) 1999-03-31 2000-10-03 Dana Corporation Method for controlling flow of lubrication in axle assembly and axle assembly with selectively adjustable drain-back spacer
DE10046170A1 (de) * 2000-09-19 2002-04-04 Fraunhofer Ges Forschung Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht
JP2003298078A (ja) 2002-03-29 2003-10-17 Ebara Corp 光起電力素子
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US8049669B2 (en) * 2004-03-26 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising circuit between first and second conducting wires
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US8129822B2 (en) * 2006-10-09 2012-03-06 Solexel, Inc. Template for three-dimensional thin-film solar cell manufacturing and methods of use
US8420435B2 (en) * 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US8399331B2 (en) * 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
EP1763086A1 (en) * 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
US7279362B2 (en) * 2005-03-31 2007-10-09 Intel Corporation Semiconductor wafer coat layers and methods therefor
DE102005040871A1 (de) * 2005-04-16 2006-10-19 Institut Für Solarenergieforschung Gmbh Rückkontaktierte Solarzelle und Verfahren zu deren Herstellung
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20070137692A1 (en) 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
US7705237B2 (en) * 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
US20080202577A1 (en) * 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
EP2135292A2 (en) * 2007-03-16 2009-12-23 BP Corporation North America Inc. Solar cells
JP2008283023A (ja) 2007-05-11 2008-11-20 Mitsubishi Heavy Ind Ltd 光電変換装置の製造方法
JP5230153B2 (ja) 2007-09-18 2013-07-10 三菱重工業株式会社 光電変換装置の製造方法
KR101293162B1 (ko) * 2007-11-09 2013-08-12 선프림, 리미티드 저-비용 태양 전지 및 그 제조 방법
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
US7820540B2 (en) * 2007-12-21 2010-10-26 Palo Alto Research Center Incorporated Metallization contact structures and methods for forming multiple-layer electrode structures for silicon solar cells
WO2009094575A2 (en) * 2008-01-24 2009-07-30 Applied Materials, Inc. Buried insulator isolation for solar cell contacts
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
KR100864062B1 (ko) * 2008-02-22 2008-10-16 한국철강 주식회사 태양전지 모듈 패터닝 장치
KR101155343B1 (ko) * 2008-02-25 2012-06-11 엘지전자 주식회사 백 콘택 태양전지의 제조 방법
US7833808B2 (en) * 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
TW201019482A (en) * 2008-04-09 2010-05-16 Applied Materials Inc Simplified back contact for polysilicon emitter solar cells
CN101884116A (zh) * 2008-04-17 2010-11-10 Lg电子株式会社 太阳能电池及其制造方法
US7851698B2 (en) * 2008-06-12 2010-12-14 Sunpower Corporation Trench process and structure for backside contact solar cells with polysilicon doped regions
US20100071765A1 (en) * 2008-09-19 2010-03-25 Peter Cousins Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
US8242354B2 (en) 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
CN101447518A (zh) * 2008-12-31 2009-06-03 江苏艾德太阳能科技有限公司 一种背点接触异质结太阳能电池及其制造方法
EP2422374A4 (en) 2009-04-21 2016-09-14 Tetrasun Inc METHOD FOR PRODUCING STRUCTURES FOR A SOLAR CELL
EP2422377A4 (en) 2009-04-22 2013-12-04 Tetrasun Inc Localized metal contacts by localized laser assisted conversion of functional films in solar cells
US8324015B2 (en) 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
WO2013062741A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Back contact through-holes formation process for solar cell fabrication
DE102012205966A1 (de) 2012-04-12 2013-10-17 Robert Bosch Gmbh Verfahren zur Herstellung eines Dünnschicht-Solarmoduls
CN105190903B (zh) 2013-03-15 2017-07-14 太阳能公司 太阳能电池降低的接触电阻及延长的寿命
US9768343B2 (en) 2013-04-29 2017-09-19 OB Realty, LLC. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate

Also Published As

Publication number Publication date
EP3723141C0 (en) 2023-11-22
EP2507844B1 (en) 2020-03-25
US20220029038A1 (en) 2022-01-27
US20140134787A9 (en) 2014-05-15
EP4300598A2 (en) 2024-01-03
US9087939B2 (en) 2015-07-21
CN102640300B (zh) 2017-04-12
US20190245099A1 (en) 2019-08-08
US20110126898A1 (en) 2011-06-02
CN107134498B (zh) 2019-06-28
WO2011068590A3 (en) 2011-08-04
EP3723141A1 (en) 2020-10-14
EP3723141B1 (en) 2023-11-22
US20140326308A1 (en) 2014-11-06
JP6089058B2 (ja) 2017-03-01
MY155779A (en) 2015-11-30
EP2507844A2 (en) 2012-10-10
CN102640300A (zh) 2012-08-15
EP4300598B1 (en) 2025-04-09
EP2507844A4 (en) 2013-12-25
US8785236B2 (en) 2014-07-22
US20130065357A1 (en) 2013-03-14
JP6648358B2 (ja) 2020-02-14
CN107134498A (zh) 2017-09-05
US10211349B2 (en) 2019-02-19
JP2017076826A (ja) 2017-04-20
JP2015146446A (ja) 2015-08-13
JP2013512582A (ja) 2013-04-11
EP4300598A3 (en) 2024-03-27
US20150311357A1 (en) 2015-10-29
US11152518B2 (en) 2021-10-19
WO2011068590A2 (en) 2011-06-09
PH12012500956A1 (en) 2013-01-07
US12191404B2 (en) 2025-01-07
US8324015B2 (en) 2012-12-04

Similar Documents

Publication Publication Date Title
JP5726892B2 (ja) レーザアブレーションを利用する、太陽電池のコンタクトの形成
CN103370801B (zh) 用于制造太阳能电池的方法和结构
KR101740522B1 (ko) 태양 전지와 그 제조 방법
JP2014110256A (ja) 太陽電池セルの製造方法および太陽電池セル
Harley et al. Solar cell having a plurality of conductive contacts
JP2014086587A (ja) 太陽電池セルの製造方法および太陽電池セル
JP2014112584A (ja) 太陽電池セルの製造方法および太陽電池セル
CN119630107A (zh) 太阳能电池及其制备方法
CN121013418A (zh) Ibc电池及其制备方法、光伏组件和发电装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130711

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130711

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140805

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150303

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150401

R150 Certificate of patent or registration of utility model

Ref document number: 5726892

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250