JP4607474B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP4607474B2 JP4607474B2 JP2004035527A JP2004035527A JP4607474B2 JP 4607474 B2 JP4607474 B2 JP 4607474B2 JP 2004035527 A JP2004035527 A JP 2004035527A JP 2004035527 A JP2004035527 A JP 2004035527A JP 4607474 B2 JP4607474 B2 JP 4607474B2
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- 230000008021 deposition Effects 0.000 title description 7
- 230000008016 vaporization Effects 0.000 claims description 132
- 239000002994 raw material Substances 0.000 claims description 130
- 239000007921 spray Substances 0.000 claims description 119
- 239000007789 gas Substances 0.000 claims description 99
- 238000009834 vaporization Methods 0.000 claims description 80
- 239000012159 carrier gas Substances 0.000 claims description 69
- 239000006200 vaporizer Substances 0.000 claims description 67
- 239000007788 liquid Substances 0.000 claims description 66
- 238000005507 spraying Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 27
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000010408 film Substances 0.000 description 76
- 239000003595 mist Substances 0.000 description 65
- 239000002245 particle Substances 0.000 description 48
- 239000012495 reaction gas Substances 0.000 description 31
- 238000009826 distribution Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 12
- 239000011344 liquid material Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052735 hafnium Inorganic materials 0.000 description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- -1 tert-amyl Chemical group 0.000 description 2
- DSJQFJKOTYJXSD-UHFFFAOYSA-N C(C)[Ru]C1C=CC=C1 Chemical compound C(C)[Ru]C1C=CC=C1 DSJQFJKOTYJXSD-UHFFFAOYSA-N 0.000 description 1
- GMMGOEVABABMBA-UHFFFAOYSA-N CC(C)C(C)(C)N[Hf] Chemical compound CC(C)C(C)(C)N[Hf] GMMGOEVABABMBA-UHFFFAOYSA-N 0.000 description 1
- IKMXSKDHYPICEK-UHFFFAOYSA-N N[Hf] Chemical compound N[Hf] IKMXSKDHYPICEK-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000037237 body shape Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
図10は実施例(a)と比較例(b)の気化室内の気体の流速及び流れ方向の分布の実験データを示し、図11は気化室中心部の流速とノズルからの距離との関係を示す。実施例では、噴霧ノズル側の基端側部分では流速変化が大きいが、反対側の先端側部分では流速変化が緩やかとなり、噴霧方向に対向する先端側部分の内面上でも滑らかな流速及び流れ方向の分布が見られる。また、当該内面上において流速は充分に低下しているので、噴霧ノズルで噴霧されたミストが当該内面に到達するまでに或る程度の時間余裕が生ずるとともに、気流が当該内面に沿って滑らかに流れることによりミストが内面に到達しにくくなることが予想される。一方、比較例では、噴霧ノズルから噴霧された流れが高速で噴霧方向と対向する内面にぶつかり、当該内面上において流速及び流れ方向が乱れた状態となっている。
HfO2:
原料ガス=Hf(Ot−Bu)4;反応ガス=O2
原料ガス=Hf(NEt2)4;反応ガス=O2若しくはO3
原料ガス=Hf(MMP)4;反応ガス=O2
原料ガス=Hf(NMe2)4;反応ガス=O2
原料ガス=Hf(NMeEt)4;反応ガス=O2
Ta2O5:
原料ガス=Ta(OEt)5;反応ガス=O2
HfSiOx:(xは自然数)
原料ガス=Hf(OSiEt3)4;反応ガス=O2
ZrO2:
原料ガス=Zr(Ot−Bu)4;反応ガス=O2
原料ガス=Zr(MMP)4;反応ガス=O2
SiO2:
原料ガス=Si(OEt)4;反応ガス=O3
原料ガス=Si(NMe2)4;反応ガス=O2
原料ガス=HSi(NMe2)3;反応ガス=O2
(HfO2)x(SiO2)y:(x,yは自然数)
原料ガス=Hf(NEt2)4+Si(NMe2)4;反応ガス=O2
原料ガス=Hf(Ot−Bu)4+SiH4;反応ガス=O2
原料ガス=Hf(Ot−Bu)4+Si2H6;反応ガス=O2
原料ガス=Hf(Ot−Bu)4+Si(OEt)4;反応ガス=O2
Ru/RuO2:
原料ガス=Ru(EtCp)2;反応ガス=O2
TaN:
原料ガス=Ta(Nt−Am)(NMe2)3;反応ガス=NH3
なお、上記化学式において、Meはメチル基(CH3)、Etはエチル基(C2H5)、Buはブチル基(C4H9)、Cpはシクロペンタジエニル基、Amはアミル基(C5H11)、MMPはメトキシプロポキシ基を示す。また、各原料ガスの元の液状原料としては、オクタンなどの有機溶媒により希釈して、例えば0.2モル/リットルの濃度としたものを用いることができる。
Claims (3)
- 液状原料を供給する原料供給系と、前記液状原料を気化して原料ガスを生成する気化器と、該気化器から供給される前記原料ガスを導入して成膜を行う成膜室とを有する成膜装置であって、
前記気化器は、前記液状原料を噴霧する噴霧ノズルを備えた噴霧手段と、該噴霧手段によって霧化された前記液状原料を気化して前記原料ガスを生成するための気化室と、該気化室を加熱する加熱手段と、前記気化室から前記原料ガスを導出する導出口とを有し、
前記気化室は前記噴霧手段による噴霧方向に延長された形状を有し、前記気化室の前記噴霧方向の長さと前記噴霧方向と直交する断面の円換算直径との比が3〜5の範囲内であり、その基端側部分は前記噴霧方向に進むに従って漸次内径が増大するようにテーパ状に構成された内面部分を備え、
前記噴霧ノズルは、前記液状原料を噴出する原料噴出口と、該原料噴出口の周囲に隣接して設けられたキャリアガスを噴出する環状のガス噴出口とを有し、前記原料噴出口における前記液状原料の噴出方向と、前記ガス噴出口における前記キャリアガスの噴出方向とが実質的に同一であり、
前記導出口は前記気化室の延長方向の中間位置よりも前記噴霧ノズルに近い側面位置において前記テーパ状に構成された内面部分に開口し、
前記気化器と前記成膜室との間の原料ガス供給管にキャリアガスの追加導入部を有し、
成膜時において前記追加導入部よりキャリアガスが導入されることを特徴とする成膜装置。 - 前記気化室の前記噴霧方向と直交する断面は円形であることを特徴とする請求項1に記載の成膜装置。
- 前記加熱手段は、前記気化室の前記噴霧ノズル側よりも、前記噴霧ノズルとは反対側の温度が高くなるように加熱することを特徴とする請求項1に記載の成膜装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004035527A JP4607474B2 (ja) | 2004-02-12 | 2004-02-12 | 成膜装置 |
EP05709899A EP1724817A4 (en) | 2004-02-12 | 2005-02-08 | FILM TRAINING DEVICE |
KR1020067003016A KR100749378B1 (ko) | 2004-02-12 | 2005-02-08 | 성막 장치 |
CNB2005800003761A CN100426463C (zh) | 2004-02-12 | 2005-02-08 | 成膜装置 |
PCT/JP2005/001847 WO2005078781A1 (ja) | 2004-02-12 | 2005-02-08 | 成膜装置 |
US11/054,381 US20050223987A1 (en) | 2004-02-12 | 2005-02-10 | Film forming apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004035527A JP4607474B2 (ja) | 2004-02-12 | 2004-02-12 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005228889A JP2005228889A (ja) | 2005-08-25 |
JP4607474B2 true JP4607474B2 (ja) | 2011-01-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004035527A Expired - Lifetime JP4607474B2 (ja) | 2004-02-12 | 2004-02-12 | 成膜装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20050223987A1 (ja) |
EP (1) | EP1724817A4 (ja) |
JP (1) | JP4607474B2 (ja) |
KR (1) | KR100749378B1 (ja) |
CN (1) | CN100426463C (ja) |
WO (1) | WO2005078781A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US20070187363A1 (en) * | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
CN101410548A (zh) * | 2006-04-05 | 2009-04-15 | 株式会社堀场Stec | 液体材料气化装置 |
JP5059371B2 (ja) * | 2006-10-18 | 2012-10-24 | 東京エレクトロン株式会社 | 気化器および成膜装置 |
KR101155991B1 (ko) * | 2007-06-27 | 2012-06-18 | 삼성전자주식회사 | 잉크젯 화상형성기기의 헤드칩 및 그 제조방법 |
KR101415664B1 (ko) * | 2008-01-15 | 2014-07-07 | 주성엔지니어링(주) | 기화기 및 기화기를 가지는 증착장치 |
JP5004890B2 (ja) * | 2008-07-24 | 2012-08-22 | 株式会社日立国際電気 | 気化器、基板処理装置及び半導体装置の製造方法 |
US8361231B2 (en) * | 2009-09-30 | 2013-01-29 | Ckd Corporation | Liquid vaporization system |
CN102373444A (zh) * | 2010-08-20 | 2012-03-14 | 鸿富锦精密工业(深圳)有限公司 | 镀膜装置及镀膜方法 |
JP2012204791A (ja) * | 2011-03-28 | 2012-10-22 | Tokyo Electron Ltd | 気化装置、ガス供給装置及びこれを用いた成膜装置 |
JP6049067B2 (ja) * | 2012-12-27 | 2016-12-21 | 株式会社日本マイクロニクス | 配線形成装置、メンテナンス方法および配線形成方法 |
JP6078335B2 (ja) * | 2012-12-27 | 2017-02-08 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム |
JP6151943B2 (ja) * | 2013-03-26 | 2017-06-21 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP5890367B2 (ja) * | 2013-09-24 | 2016-03-22 | トヨタ自動車株式会社 | 燃料電池用セパレータ、燃料電池、及び、燃料電池用セパレータの製造方法 |
KR102150421B1 (ko) * | 2013-12-13 | 2020-09-01 | 엘지디스플레이 주식회사 | 증착장비 및 이의 동작방법 |
US9885112B2 (en) * | 2014-12-02 | 2018-02-06 | Asm Ip Holdings B.V. | Film forming apparatus |
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CN111356785A (zh) | 2017-11-19 | 2020-06-30 | 应用材料公司 | 用于金属氧化物在金属表面上的ald的方法 |
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JP6875336B2 (ja) | 2018-08-27 | 2021-05-26 | 信越化学工業株式会社 | 成膜方法 |
JP2020092125A (ja) * | 2018-12-03 | 2020-06-11 | トヨタ自動車株式会社 | 成膜装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11342328A (ja) * | 1998-06-01 | 1999-12-14 | Japan Pionics Co Ltd | 気化器及び気化供給方法 |
JP2000199066A (ja) * | 1998-12-30 | 2000-07-18 | Hyundai Electronics Ind Co Ltd | 液体運送装置 |
JP2001152343A (ja) * | 1999-11-26 | 2001-06-05 | Nec Corp | 気化装置 |
JP2002208811A (ja) * | 2001-01-05 | 2002-07-26 | Mitsubishi Electric Corp | パラボラアンテナ |
JP2002289531A (ja) * | 2001-03-23 | 2002-10-04 | Ricoh Co Ltd | 原料ガス供給装置および原料ガス供給方法および薄膜形成装置およびエピタキシャル成長装置 |
JP2003318171A (ja) * | 2002-04-26 | 2003-11-07 | Fujitsu Ltd | 成膜方法 |
JP2005113221A (ja) * | 2003-10-08 | 2005-04-28 | Lintec Co Ltd | 気化器並びにこれを用いた液体気化供給装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5653813A (en) * | 1995-04-03 | 1997-08-05 | Novellus Systems, Inc. | Cyclone evaporator |
US6244575B1 (en) * | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
JP3657427B2 (ja) * | 1998-05-13 | 2005-06-08 | 株式会社フジクラ | Cvd用液体原料供給装置 |
JP3823591B2 (ja) * | 1999-03-25 | 2006-09-20 | 三菱電機株式会社 | Cvd原料用気化装置およびこれを用いたcvd装置 |
DE10007059A1 (de) * | 2000-02-16 | 2001-08-23 | Aixtron Ag | Verfahren und Vorrichtung zur Herstellung von beschichteten Substraten mittels Kondensationsbeschichtung |
US7163197B2 (en) * | 2000-09-26 | 2007-01-16 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method |
JP3850651B2 (ja) * | 2000-09-26 | 2006-11-29 | 株式会社島津製作所 | 気化器 |
DE10057491A1 (de) * | 2000-11-20 | 2002-05-23 | Aixtron Ag | Vorrichtung und Verfahren zum Zuführen eines in die Gasform gebrachten flüssigen Ausgangsstoffes in einen CVD-Reaktor |
EP1211333A3 (en) * | 2000-12-01 | 2003-07-30 | Japan Pionics Co., Ltd. | Vaporizer for CVD apparatus |
JP2002217181A (ja) * | 2001-01-19 | 2002-08-02 | Japan Steel Works Ltd:The | 半導体原料供給用気化器 |
JP2005511894A (ja) * | 2001-12-04 | 2005-04-28 | プライマックス・インコーポレーテッド | 化学蒸着用ベーパライザ |
KR100574150B1 (ko) * | 2002-02-28 | 2006-04-25 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조방법 |
JP4309630B2 (ja) * | 2002-09-19 | 2009-08-05 | 東京エレクトロン株式会社 | 原料気化器及び成膜処理装置 |
JP4080392B2 (ja) * | 2003-07-17 | 2008-04-23 | 東京エレクトロン株式会社 | ガス化モニタ、ミストの検出方法、成膜方法、成膜装置 |
-
2004
- 2004-02-12 JP JP2004035527A patent/JP4607474B2/ja not_active Expired - Lifetime
-
2005
- 2005-02-08 WO PCT/JP2005/001847 patent/WO2005078781A1/ja not_active Application Discontinuation
- 2005-02-08 EP EP05709899A patent/EP1724817A4/en not_active Withdrawn
- 2005-02-08 KR KR1020067003016A patent/KR100749378B1/ko active IP Right Grant
- 2005-02-08 CN CNB2005800003761A patent/CN100426463C/zh not_active Expired - Fee Related
- 2005-02-10 US US11/054,381 patent/US20050223987A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11342328A (ja) * | 1998-06-01 | 1999-12-14 | Japan Pionics Co Ltd | 気化器及び気化供給方法 |
JP2000199066A (ja) * | 1998-12-30 | 2000-07-18 | Hyundai Electronics Ind Co Ltd | 液体運送装置 |
JP2001152343A (ja) * | 1999-11-26 | 2001-06-05 | Nec Corp | 気化装置 |
JP2002208811A (ja) * | 2001-01-05 | 2002-07-26 | Mitsubishi Electric Corp | パラボラアンテナ |
JP2002289531A (ja) * | 2001-03-23 | 2002-10-04 | Ricoh Co Ltd | 原料ガス供給装置および原料ガス供給方法および薄膜形成装置およびエピタキシャル成長装置 |
JP2003318171A (ja) * | 2002-04-26 | 2003-11-07 | Fujitsu Ltd | 成膜方法 |
JP2005113221A (ja) * | 2003-10-08 | 2005-04-28 | Lintec Co Ltd | 気化器並びにこれを用いた液体気化供給装置 |
Also Published As
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EP1724817A1 (en) | 2006-11-22 |
CN1788334A (zh) | 2006-06-14 |
WO2005078781A1 (ja) | 2005-08-25 |
KR20060032658A (ko) | 2006-04-17 |
KR100749378B1 (ko) | 2007-08-14 |
CN100426463C (zh) | 2008-10-15 |
JP2005228889A (ja) | 2005-08-25 |
US20050223987A1 (en) | 2005-10-13 |
EP1724817A4 (en) | 2009-07-01 |
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