JP4597259B2 - Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 - Google Patents

Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 Download PDF

Info

Publication number
JP4597259B2
JP4597259B2 JP2010069413A JP2010069413A JP4597259B2 JP 4597259 B2 JP4597259 B2 JP 4597259B2 JP 2010069413 A JP2010069413 A JP 2010069413A JP 2010069413 A JP2010069413 A JP 2010069413A JP 4597259 B2 JP4597259 B2 JP 4597259B2
Authority
JP
Japan
Prior art keywords
group iii
nitride semiconductor
iii nitride
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010069413A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010251736A (ja
Inventor
隆一 鳥羽
雅仁 宮下
達憲 豊田
嘉孝 門脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Dowa Electronics Materials Co Ltd
Original Assignee
Dowa Holdings Co Ltd
Dowa Electronics Materials Co Ltd
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2010069413A priority Critical patent/JP4597259B2/ja
Application filed by Dowa Holdings Co Ltd, Dowa Electronics Materials Co Ltd, Dowa Mining Co Ltd filed Critical Dowa Holdings Co Ltd
Priority to KR1020117024798A priority patent/KR101321654B1/ko
Priority to EP10756280.3A priority patent/EP2413350A4/en
Priority to PCT/JP2010/055986 priority patent/WO2010110489A1/ja
Priority to CN201080021400.0A priority patent/CN102714145B/zh
Priority to US13/259,788 priority patent/US8878189B2/en
Priority to TW099109069A priority patent/TWI479541B/zh
Publication of JP2010251736A publication Critical patent/JP2010251736A/ja
Application granted granted Critical
Publication of JP4597259B2 publication Critical patent/JP4597259B2/ja
Priority to US13/750,826 priority patent/US20130137246A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2010069413A 2009-03-27 2010-03-25 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法 Active JP4597259B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020117024798A KR101321654B1 (ko) 2009-03-27 2010-03-25 Ⅲ족 질화물 반도체 성장용 기판, ⅲ족 질화물 반도체 에피택셜 기판, ⅲ족 질화물 반도체 소자 및 ⅲ족 질화물 반도체 자립 기판, 및 이들의 제조 방법
EP10756280.3A EP2413350A4 (en) 2009-03-27 2010-03-25 GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR COMPONENT, AUTONOMOUS SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTORS AND METHODS OF MAKING SAME MANUFACTURING
PCT/JP2010/055986 WO2010110489A1 (ja) 2009-03-27 2010-03-25 Iii族窒化物半導体成長用基板、iii族窒化物半導体エピタキシャル基板、iii族窒化物半導体素子およびiii族窒化物半導体自立基板、ならびに、これらの製造方法
CN201080021400.0A CN102714145B (zh) 2009-03-27 2010-03-25 第iii族氮化物半导体生长基板、外延基板、元件、自立基板及其制造方法
JP2010069413A JP4597259B2 (ja) 2009-03-27 2010-03-25 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
US13/259,788 US8878189B2 (en) 2009-03-27 2010-03-25 Group III nitride semiconductor growth substrate, group III nitride semiconductor epitaxial substrate, group III nitride semiconductor element and group III nitride semiconductor free-standing substrate, and method of producing the same
TW099109069A TWI479541B (zh) 2009-03-27 2010-03-26 A group III nitride semiconductor semiconductor substrate, a group III nitride semiconductor semiconductor substrate, a group III nitride semiconductor device, and a group III nitride semiconductor self-supporting substrate, and a method of manufacturing the same
US13/750,826 US20130137246A1 (en) 2009-03-27 2013-01-25 Method of producing group iii nitride semiconductor growth substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009080242 2009-03-27
JP2010069413A JP4597259B2 (ja) 2009-03-27 2010-03-25 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010191049A Division JP2010278470A (ja) 2009-03-27 2010-08-27 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法

Publications (2)

Publication Number Publication Date
JP2010251736A JP2010251736A (ja) 2010-11-04
JP4597259B2 true JP4597259B2 (ja) 2010-12-15

Family

ID=42781174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010069413A Active JP4597259B2 (ja) 2009-03-27 2010-03-25 Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法

Country Status (7)

Country Link
US (2) US8878189B2 (zh)
EP (1) EP2413350A4 (zh)
JP (1) JP4597259B2 (zh)
KR (1) KR101321654B1 (zh)
CN (1) CN102714145B (zh)
TW (1) TWI479541B (zh)
WO (1) WO2010110489A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013201326A (ja) * 2012-03-26 2013-10-03 Hitachi Cable Ltd 窒化ガリウム基板及びエピタキシャルウェハ
JP6017834B2 (ja) 2012-05-16 2016-11-02 Ｄｏｗａエレクトロニクス株式会社 半導体素子の製造方法ならびに半導体素子集合体および半導体素子
JP5876386B2 (ja) * 2012-07-19 2016-03-02 日本電信電話株式会社 窒化物半導体装置の製造方法
EP2779213B1 (en) * 2013-03-12 2015-05-06 Siltronic AG Semiconductor wafer with a layer of AlzGa1-zN and process for producing it
JP2015153826A (ja) * 2014-02-12 2015-08-24 ウシオ電機株式会社 窒化物半導体発光素子及びその製造方法
KR102534857B1 (ko) * 2016-02-12 2023-05-19 주식회사 엘엑스세미콘 탄화규소 에피 웨이퍼 및 이를 포함하는 반도체 소자
GB2552526A (en) * 2016-07-28 2018-01-31 Siemens Ag Electrochemical method of ammonia generation
US10283597B2 (en) * 2016-11-10 2019-05-07 The United States Of America, As Represented By The Secretary Of The Navy Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials
JP7055595B2 (ja) * 2017-03-29 2022-04-18 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法
JP6783990B2 (ja) * 2017-09-07 2020-11-11 豊田合成株式会社 Ｉｉｉ族窒化物半導体素子の製造方法および基板の製造方法
CN107681025B (zh) * 2017-09-12 2020-07-28 西安交通大学 一种GaN基白光LED外延结构及制备方法
KR102374879B1 (ko) * 2017-12-19 2022-03-15 가부시키가이샤 사무코 Ⅲ족 질화물 반도체 기판의 제조 방법
CN109545913A (zh) * 2018-10-30 2019-03-29 江苏晶曌半导体有限公司 一种Si衬底大功率绿光LED外延结构的优化方法
CN111218643A (zh) * 2020-01-19 2020-06-02 镓特半导体科技（上海）有限公司 自支撑氮化镓层及其制作方法
CN111172509A (zh) * 2020-01-19 2020-05-19 镓特半导体科技（上海）有限公司 半导体结构、自支撑掺杂氮化镓层及其制备方法
CN112735944A (zh) * 2021-01-05 2021-04-30 西安电子科技大学 氮极性面GaN材料及其制作方法
CN113921665B (zh) * 2021-12-14 2022-04-12 山西中科潞安紫外光电科技有限公司 一种垂直结构的深紫外led外延片及其生长方法
CN114220889B (zh) * 2021-12-14 2024-04-30 山西中科潞安紫外光电科技有限公司 一种垂直结构的深紫外led外延片及其生长方法
WO2024094613A1 (en) * 2022-11-03 2024-05-10 Ams-Osram International Gmbh Method for manufacturing a semiconductor device and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221083A (ja) * 2008-03-18 2009-10-01 Tohoku Techno Arch Co Ltd Ｉｉｉ族窒化物半導体およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3813740B2 (ja) * 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
JP2000150875A (ja) * 1998-11-13 2000-05-30 Toshiba Corp 半導体装置及び薄膜形成方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP3631724B2 (ja) 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP4117156B2 (ja) * 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
GB2398672A (en) 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
JP4396816B2 (ja) * 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
GB0424957D0 (en) * 2004-11-11 2004-12-15 Btg Int Ltd Methods for fabricating semiconductor devices and devices fabricated thereby
WO2006126330A1 (ja) 2005-04-04 2006-11-30 Tohoku Techno Arch Co., Ltd. ＧａＮ単結晶成長方法，ＧａＮ基板作製方法，ＧａＮ系素子製造方法およびＧａＮ系素子
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
JP2007134388A (ja) * 2005-11-08 2007-05-31 Sharp Corp 窒化物系半導体素子とその製造方法
JP2009519202A (ja) * 2005-12-12 2009-05-14 キーマ テクノロジーズ， インク． Ｉｉｉ族窒化物製品及び同製品の作製方法
US7601430B2 (en) * 2006-01-31 2009-10-13 Los Alamos National Security, Llc Biaxially oriented film on flexible polymeric substrate
US8013320B2 (en) * 2006-03-03 2011-09-06 Panasonic Corporation Nitride semiconductor device and method for fabricating the same
JP4236122B2 (ja) 2006-10-03 2009-03-11 株式会社 東北テクノアーチ 半導体基板の製造方法
JP4236121B2 (ja) 2006-10-03 2009-03-11 株式会社 東北テクノアーチ 半導体基板の製造方法
JP2008100860A (ja) 2006-10-17 2008-05-01 Sumitomo Metal Mining Co Ltd 単結晶窒化アルミニウム積層基板の製造方法
JP5060875B2 (ja) 2007-08-28 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 Ｉｉｉ族窒化物半導体とその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221083A (ja) * 2008-03-18 2009-10-01 Tohoku Techno Arch Co Ltd Ｉｉｉ族窒化物半導体およびその製造方法

Also Published As

Publication number Publication date
CN102714145A (zh) 2012-10-03
TWI479541B (zh) 2015-04-01
KR101321654B1 (ko) 2013-10-23
WO2010110489A9 (ja) 2012-03-01
JP2010251736A (ja) 2010-11-04
US20120061683A1 (en) 2012-03-15
TW201041016A (en) 2010-11-16
WO2010110489A1 (ja) 2010-09-30
EP2413350A1 (en) 2012-02-01
US8878189B2 (en) 2014-11-04
US20130137246A1 (en) 2013-05-30
EP2413350A4 (en) 2013-10-23
KR20110130502A (ko) 2011-12-05
CN102714145B (zh) 2015-07-08

Similar Documents

Publication Publication Date Title
JP4597259B2 (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP3886341B2 (ja) 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3631724B2 (ja) Ｉｉｉ族窒化物半導体基板およびその製造方法
JP4117156B2 (ja) Ｉｉｉ族窒化物半導体基板の製造方法
US8216869B2 (en) Group III nitride semiconductor and a manufacturing method thereof
JP3821232B2 (ja) エピタキシャル成長用多孔質基板およびその製造方法ならびにｉｉｉ族窒化物半導体基板の製造方法
KR100841269B1 (ko) Ⅲ족 질화물 반도체 다층구조물
JP4809471B2 (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP5439526B2 (ja) Ｉｉｉ族窒化物半導体及びｉｉｉ族窒化物半導体成長用基板
JP5430467B2 (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体自立基板、ｉｉｉ族窒化物半導体素子、ならびに、これらの製造方法
JP4786587B2 (ja) Ｉｉｉ族窒化物半導体およびその製造方法、ｉｉｉ族窒化物半導体製造用基板
JP2010278470A (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP5684551B2 (ja) Ｉｉｉ族窒化物半導体成長用基板、ｉｉｉ族窒化物半導体エピタキシャル基板、ｉｉｉ族窒化物半導体素子およびｉｉｉ族窒化物半導体自立基板、ならびに、これらの製造方法
JP4757834B2 (ja) Ｉｉｉ族窒化物半導体およびその製造方法、ｉｉｉ族窒化物半導体製造用基板
JP2005045153A (ja) 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
JP2005317560A (ja) エピタキシャル基板を製造する方法、ｉｉｉ族窒化物半導体デバイスを製造する方法、エピタキシャル基板、およびｉｉｉ族窒化物半導体デバイス
JP2011222778A (ja) 積層体の製造方法、ｉｉｉ族窒化物単結晶自立基板の製造方法、および、積層体
JP2012121772A (ja) 窒化物半導体基板の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100827

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100914

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100921

R150 Certificate of patent or registration of utility model

Ref document number: 4597259

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131001

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250