JP4588153B2 - レーザー照射装置 - Google Patents

レーザー照射装置 Download PDF

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Publication number
JP4588153B2
JP4588153B2 JP2000052833A JP2000052833A JP4588153B2 JP 4588153 B2 JP4588153 B2 JP 4588153B2 JP 2000052833 A JP2000052833 A JP 2000052833A JP 2000052833 A JP2000052833 A JP 2000052833A JP 4588153 B2 JP4588153 B2 JP 4588153B2
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Japan
Prior art keywords
cylindrical lens
laser
lens group
cylindrical
film
Prior art date
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Expired - Fee Related
Application number
JP2000052833A
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English (en)
Japanese (ja)
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JP2000323428A5 (enrdf_load_stackoverflow
JP2000323428A (ja
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000052833A priority Critical patent/JP4588153B2/ja
Publication of JP2000323428A publication Critical patent/JP2000323428A/ja
Publication of JP2000323428A5 publication Critical patent/JP2000323428A5/ja
Application granted granted Critical
Publication of JP4588153B2 publication Critical patent/JP4588153B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2000052833A 1999-03-08 2000-02-29 レーザー照射装置 Expired - Fee Related JP4588153B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000052833A JP4588153B2 (ja) 1999-03-08 2000-02-29 レーザー照射装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-60368 1999-03-08
JP6036899 1999-03-08
JP2000052833A JP4588153B2 (ja) 1999-03-08 2000-02-29 レーザー照射装置

Publications (3)

Publication Number Publication Date
JP2000323428A JP2000323428A (ja) 2000-11-24
JP2000323428A5 JP2000323428A5 (enrdf_load_stackoverflow) 2007-04-12
JP4588153B2 true JP4588153B2 (ja) 2010-11-24

Family

ID=26401428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000052833A Expired - Fee Related JP4588153B2 (ja) 1999-03-08 2000-02-29 レーザー照射装置

Country Status (1)

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JP (1) JP4588153B2 (enrdf_load_stackoverflow)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW445545B (en) 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
US7217605B2 (en) * 2000-11-29 2007-05-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and method of manufacturing a semiconductor device
JP2007123910A (ja) * 2000-11-29 2007-05-17 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法
JP2002231628A (ja) * 2001-02-01 2002-08-16 Sony Corp 半導体薄膜の形成方法及び半導体装置の製造方法、これらの方法の実施に使用する装置、並びに電気光学装置
TW528879B (en) * 2001-02-22 2003-04-21 Ishikawajima Harima Heavy Ind Illumination optical system and laser processor having the same
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
WO2003041143A1 (fr) 2001-11-09 2003-05-15 Semiconductor Energy Laboratory Co., Ltd. Dispositif de traitement par faisceau laser et dispositif semi-conducteur
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7005601B2 (en) * 2002-04-18 2006-02-28 Applied Materials, Inc. Thermal flux processing by scanning
US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
JP2004103628A (ja) * 2002-09-05 2004-04-02 Hitachi Ltd レーザアニール装置及びｔｆｔ基板のレーザアニール方法
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP2005175444A (ja) * 2003-11-20 2005-06-30 Semiconductor Energy Lab Co Ltd レーザ照射装置並びに半導体装置の作製方法。
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
JP5078231B2 (ja) * 2004-03-24 2012-11-21 株式会社半導体エネルギー研究所 レーザ照射装置
US7812283B2 (en) 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
JP2005311346A (ja) * 2004-03-26 2005-11-04 Semiconductor Energy Lab Co Ltd レーザアニール方法及び装置
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
JP4589660B2 (ja) * 2004-05-31 2010-12-01 住友重機械工業株式会社 ビーム整形光学装置
JP2008524662A (ja) * 2004-12-22 2008-07-10 カール・ツアイス・レーザー・オプティクス・ゲーエムベーハー 線ビームを生成するための光学照射系
WO2006072260A1 (de) * 2005-01-04 2006-07-13 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Strahlteileranordnung
JP5153086B2 (ja) * 2005-05-02 2013-02-27 株式会社半導体エネルギー研究所 レーザ照射装置
WO2006118312A1 (en) 2005-05-02 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP4857639B2 (ja) * 2005-07-27 2012-01-18 ソニー株式会社 表示装置及び表示装置の製造方法
JP5238167B2 (ja) * 2007-02-15 2013-07-17 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
EP2237079B1 (de) * 2009-04-03 2013-05-29 Innovavent GmbH Vorrichtung zum Homogenisieren kohärenter Strahlung
JP5881382B2 (ja) * 2011-11-15 2016-03-09 住友重機械工業株式会社 レーザ照射装置
DE102013102553B4 (de) 2013-03-13 2020-12-03 LIMO GmbH Vorrichtung zur Homogenisierung von Laserstrahlung
DE102020204656A1 (de) * 2020-04-11 2021-10-14 DLIP UG (haftungsbeschränkt) Anordnung optischer Elemente zur Ausbildung von großflächigen Strukturen mit linienförmigen Strukturelementen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4056577B2 (ja) * 1997-02-28 2008-03-05 株式会社半導体エネルギー研究所 レーザー照射方法
JP3770999B2 (ja) * 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JPH10314970A (ja) * 1997-05-14 1998-12-02 Tsunezo Sei レーザービーム照射の均一性を向上する方法
JP3462053B2 (ja) * 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス

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