JP4583797B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4583797B2
JP4583797B2 JP2004119624A JP2004119624A JP4583797B2 JP 4583797 B2 JP4583797 B2 JP 4583797B2 JP 2004119624 A JP2004119624 A JP 2004119624A JP 2004119624 A JP2004119624 A JP 2004119624A JP 4583797 B2 JP4583797 B2 JP 4583797B2
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Prior art keywords
film
substrate
tft
insulating film
light
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JP2004119624A
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Japanese (ja)
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JP2005303150A5 (enExample
JP2005303150A (ja
Inventor
健吾 秋元
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004119624A priority Critical patent/JP4583797B2/ja
Publication of JP2005303150A publication Critical patent/JP2005303150A/ja
Publication of JP2005303150A5 publication Critical patent/JP2005303150A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004119624A 2004-04-14 2004-04-14 半導体装置の作製方法 Expired - Fee Related JP4583797B2 (ja)

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JP2004119624A JP4583797B2 (ja) 2004-04-14 2004-04-14 半導体装置の作製方法

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Application Number Priority Date Filing Date Title
JP2004119624A JP4583797B2 (ja) 2004-04-14 2004-04-14 半導体装置の作製方法

Publications (3)

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JP2005303150A JP2005303150A (ja) 2005-10-27
JP2005303150A5 JP2005303150A5 (enExample) 2007-05-17
JP4583797B2 true JP4583797B2 (ja) 2010-11-17

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0524783D0 (en) * 2005-12-05 2006-01-11 Cambridge Display Tech Ltd Cavity glass for light-emissive devices and a method of manufacturing the same
JP5259247B2 (ja) * 2007-08-22 2013-08-07 富士フイルム株式会社 表示素子の封止方法およびガスバリアフィルムで封止された表示素子の製造方法
JP4953166B2 (ja) * 2007-11-29 2012-06-13 カシオ計算機株式会社 表示パネルの製造方法
JP5293322B2 (ja) * 2009-03-24 2013-09-18 凸版印刷株式会社 有機ｅｌパネル及びその製造方法
KR102333270B1 (ko) 2009-12-04 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6617024B2 (ja) * 2015-12-24 2019-12-04 パイオニア株式会社 発光装置
US11342666B2 (en) * 2017-02-28 2022-05-24 Sharp Kabushiki Kaisha TFT substrate, scanning antenna provided with TFT substrate, and method for manufacturing TFT substrate
CN107359126B (zh) * 2017-07-11 2020-03-10 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示面板
CN110729409B (zh) * 2019-10-25 2020-12-29 吉林大学 一种有机光电器件封装薄膜及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3141656B2 (ja) * 1993-11-01 2001-03-05 富士ゼロックス株式会社 薄膜半導体装置の製造方法
JP2001223365A (ja) * 2000-02-10 2001-08-17 Fujitsu Ltd 薄膜トランジスタ及びその製造方法
JP4056765B2 (ja) * 2001-02-28 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法

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