JP4579894B2 - 放射線検出装置及び放射線検出システム - Google Patents

放射線検出装置及び放射線検出システム Download PDF

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Publication number
JP4579894B2
JP4579894B2 JP2006337588A JP2006337588A JP4579894B2 JP 4579894 B2 JP4579894 B2 JP 4579894B2 JP 2006337588 A JP2006337588 A JP 2006337588A JP 2006337588 A JP2006337588 A JP 2006337588A JP 4579894 B2 JP4579894 B2 JP 4579894B2
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Japan
Prior art keywords
radiation detection
light source
detection apparatus
substrate
light
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Expired - Fee Related
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JP2006337588A
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English (en)
Japanese (ja)
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JP2007192809A5 (enExample
JP2007192809A (ja
Inventor
慶一 野村
善広 小川
聡 岡田
正人 井上
慎市 竹田
和美 長野
覚 澤田
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006337588A priority Critical patent/JP4579894B2/ja
Priority to US12/091,088 priority patent/US7952058B2/en
Priority to CN2006800484643A priority patent/CN101341422B/zh
Priority to PCT/JP2006/325684 priority patent/WO2007072963A1/en
Publication of JP2007192809A publication Critical patent/JP2007192809A/ja
Publication of JP2007192809A5 publication Critical patent/JP2007192809A5/ja
Application granted granted Critical
Publication of JP4579894B2 publication Critical patent/JP4579894B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2018—Scintillation-photodiode combinations
    • G01T1/20184—Detector read-out circuitry, e.g. for clearing of traps, compensating for traps or compensating for direct hits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/016—Manufacture or treatment of image sensors covered by group H10F39/12 of thin-film-based image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006337588A 2005-12-20 2006-12-14 放射線検出装置及び放射線検出システム Expired - Fee Related JP4579894B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006337588A JP4579894B2 (ja) 2005-12-20 2006-12-14 放射線検出装置及び放射線検出システム
US12/091,088 US7952058B2 (en) 2005-12-20 2006-12-19 Radiation detection apparatus and radiation detection system having a light source located to reduce dark current
CN2006800484643A CN101341422B (zh) 2005-12-20 2006-12-19 放射线检测设备和放射线检测系统
PCT/JP2006/325684 WO2007072963A1 (en) 2005-12-20 2006-12-19 Radiation detection apparatus and radiation detection system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005367190 2005-12-20
JP2006337588A JP4579894B2 (ja) 2005-12-20 2006-12-14 放射線検出装置及び放射線検出システム

Publications (3)

Publication Number Publication Date
JP2007192809A JP2007192809A (ja) 2007-08-02
JP2007192809A5 JP2007192809A5 (enExample) 2010-02-12
JP4579894B2 true JP4579894B2 (ja) 2010-11-10

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JP2006337588A Expired - Fee Related JP4579894B2 (ja) 2005-12-20 2006-12-14 放射線検出装置及び放射線検出システム

Country Status (4)

Country Link
US (1) US7952058B2 (enExample)
JP (1) JP4579894B2 (enExample)
CN (1) CN101341422B (enExample)
WO (1) WO2007072963A1 (enExample)

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JP5439837B2 (ja) 2009-02-10 2014-03-12 ソニー株式会社 表示装置
JP5665494B2 (ja) 2010-06-24 2015-02-04 キヤノン株式会社 放射線検出装置及び放射線撮像システム
JP5680943B2 (ja) 2010-11-16 2015-03-04 キヤノン株式会社 シンチレータ、放射線検出装置および放射線撮影装置
JP5604323B2 (ja) * 2011-01-31 2014-10-08 富士フイルム株式会社 放射線画像検出装置
JP2013029384A (ja) 2011-07-27 2013-02-07 Canon Inc 放射線検出装置、その製造方法および放射線検出システム
JP2013228366A (ja) * 2012-03-29 2013-11-07 Canon Inc 放射線検出装置及び放射線検出システム
JP5997512B2 (ja) 2012-06-20 2016-09-28 キヤノン株式会社 放射線検出装置及び撮像システム
JP6200173B2 (ja) 2013-03-21 2017-09-20 キヤノン株式会社 放射線検出装置及び放射線検出システム
US9526468B2 (en) 2014-09-09 2016-12-27 General Electric Company Multiple frame acquisition for exposure control in X-ray medical imagers
JP6478538B2 (ja) 2014-09-10 2019-03-06 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP6573377B2 (ja) 2015-07-08 2019-09-11 キヤノン株式会社 放射線撮像装置、その制御方法及びプログラム
JP6573378B2 (ja) 2015-07-10 2019-09-11 キヤノン株式会社 放射線撮像装置、その制御方法及びプログラム
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JP6663210B2 (ja) 2015-12-01 2020-03-11 キヤノン株式会社 放射線撮像装置及びその制御方法
JP6706963B2 (ja) 2016-04-18 2020-06-10 キヤノン株式会社 放射線撮像装置、放射線撮像システム、及び、放射線撮像装置の制御方法
JP6778118B2 (ja) 2017-01-13 2020-10-28 キヤノン株式会社 放射線撮像装置及び放射線撮像システム
WO2019012846A1 (ja) 2017-07-10 2019-01-17 キヤノン株式会社 放射線撮像装置および放射線撮像システム
JP7030478B2 (ja) 2017-11-09 2022-03-07 キヤノン株式会社 撮影台および放射線撮影システム

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JP5089195B2 (ja) 2006-03-02 2012-12-05 キヤノン株式会社 放射線検出装置、シンチレータパネル、放射線検出システム及び放射線検出装置の製造方法
JP4834614B2 (ja) 2007-06-12 2011-12-14 キヤノン株式会社 放射線検出装置および放射線撮像システム

Also Published As

Publication number Publication date
US7952058B2 (en) 2011-05-31
CN101341422A (zh) 2009-01-07
WO2007072963A1 (en) 2007-06-28
US20090289170A1 (en) 2009-11-26
JP2007192809A (ja) 2007-08-02
CN101341422B (zh) 2012-07-04

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