JP4573863B2 - 窒化物系半導体素子の製造方法 - Google Patents

窒化物系半導体素子の製造方法 Download PDF

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Publication number
JP4573863B2
JP4573863B2 JP2007283225A JP2007283225A JP4573863B2 JP 4573863 B2 JP4573863 B2 JP 4573863B2 JP 2007283225 A JP2007283225 A JP 2007283225A JP 2007283225 A JP2007283225 A JP 2007283225A JP 4573863 B2 JP4573863 B2 JP 4573863B2
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Japan
Prior art keywords
nitride
semiconductor laser
optical waveguide
based semiconductor
substrate
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Expired - Fee Related
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JP2007283225A
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English (en)
Japanese (ja)
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JP2008160070A (ja
Inventor
靖之 別所
康彦 野村
雅幸 畑
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP2007283225A priority Critical patent/JP4573863B2/ja
Priority to US11/948,058 priority patent/US20080130698A1/en
Publication of JP2008160070A publication Critical patent/JP2008160070A/ja
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Publication of JP4573863B2 publication Critical patent/JP4573863B2/ja
Priority to US13/193,431 priority patent/US20110281382A1/en
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  • Semiconductor Lasers (AREA)
JP2007283225A 2006-11-30 2007-10-31 窒化物系半導体素子の製造方法 Expired - Fee Related JP4573863B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007283225A JP4573863B2 (ja) 2006-11-30 2007-10-31 窒化物系半導体素子の製造方法
US11/948,058 US20080130698A1 (en) 2006-11-30 2007-11-30 Nitride-based semiconductor device and method of fabricating the same
US13/193,431 US20110281382A1 (en) 2006-11-30 2011-07-28 Nitride-based semiconductor device and method of fabricating the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006323582 2006-11-30
JP2007283225A JP4573863B2 (ja) 2006-11-30 2007-10-31 窒化物系半導体素子の製造方法

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JP2008260179A Division JP2009004820A (ja) 2006-11-30 2008-10-06 窒化物系半導体素子およびその製造方法

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JP2008160070A JP2008160070A (ja) 2008-07-10
JP4573863B2 true JP4573863B2 (ja) 2010-11-04

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JP2008260179A Pending JP2009004820A (ja) 2006-11-30 2008-10-06 窒化物系半導体素子およびその製造方法

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JP (2) JP4573863B2 (enExample)
CN (1) CN101202421A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045076A (ja) * 2008-08-08 2010-02-25 Sanyo Electric Co Ltd 発光素子の形成方法
JP5670040B2 (ja) * 2009-10-09 2015-02-18 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5625355B2 (ja) * 2010-01-07 2014-11-19 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、ｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5961989B2 (ja) * 2011-12-02 2016-08-03 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012102306B4 (de) * 2012-03-19 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
CN108305918B (zh) * 2017-01-12 2019-07-16 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
DE102017117135A1 (de) 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode
CN113131331A (zh) * 2019-12-31 2021-07-16 华星光通科技股份有限公司 不连续脊状结构的半导体激光元件的制造方法
WO2021251191A1 (ja) * 2020-06-12 2021-12-16 日亜化学工業株式会社 レーザダイオード素子及びその製造方法
JP2022044464A (ja) * 2020-09-07 2022-03-17 ソニーグループ株式会社 半導体レーザおよび半導体レーザ装置
JP2023111096A (ja) * 2022-01-31 2023-08-10 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ素子及び半導体レーザ素子の製造方法
CN115832870B (zh) * 2022-11-09 2025-05-30 中国科学院半导体研究所 半导体激光器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123086A (ja) * 1983-12-08 1985-07-01 Nec Corp 半導体レ−ザの製造方法
JPS60144985A (ja) * 1983-12-30 1985-07-31 Fujitsu Ltd 半導体発光素子の製造方法
JPS62190892A (ja) * 1986-02-18 1987-08-21 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法
JPH01280388A (ja) * 1988-05-06 1989-11-10 Sharp Corp 半導体素子の製造方法
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
JP4169821B2 (ja) * 1998-02-18 2008-10-22 シャープ株式会社 発光ダイオード
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
JP2002190635A (ja) * 2000-12-20 2002-07-05 Sharp Corp 半導体レーザ素子およびその製造方法
JP4703014B2 (ja) * 2001-02-15 2011-06-15 シャープ株式会社 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
JP2003017791A (ja) * 2001-07-03 2003-01-17 Sharp Corp 窒化物半導体素子及びこの窒化物半導体素子の製造方法
JP4518733B2 (ja) * 2002-06-17 2010-08-04 ソニー株式会社 窒化ガリウム系半導体レーザ素子の製造方法
JP4385590B2 (ja) * 2002-11-26 2009-12-16 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP4539077B2 (ja) * 2003-10-29 2010-09-08 日本電気株式会社 半導体素子の製造方法
JP2006294975A (ja) * 2005-04-13 2006-10-26 Mitsubishi Electric Corp 半導体レーザ

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JP2009004820A (ja) 2009-01-08
JP2008160070A (ja) 2008-07-10
CN101202421A (zh) 2008-06-18

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