JP2009004820A5 - - Google Patents
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- Publication number
- JP2009004820A5 JP2009004820A5 JP2008260179A JP2008260179A JP2009004820A5 JP 2009004820 A5 JP2009004820 A5 JP 2009004820A5 JP 2008260179 A JP2008260179 A JP 2008260179A JP 2008260179 A JP2008260179 A JP 2008260179A JP 2009004820 A5 JP2009004820 A5 JP 2009004820A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser chip
- nitride
- optical waveguide
- arrow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 256
- 230000003287 optical effect Effects 0.000 claims description 90
- 230000007547 defect Effects 0.000 claims description 83
- 150000004767 nitrides Chemical class 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 46
- 230000017525 heat dissipation Effects 0.000 claims description 21
- 230000004927 fusion Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 description 77
- 238000003776 cleavage reaction Methods 0.000 description 76
- 230000007017 scission Effects 0.000 description 76
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 65
- 235000012431 wafers Nutrition 0.000 description 57
- 238000004519 manufacturing process Methods 0.000 description 43
- 229910000679 solder Inorganic materials 0.000 description 27
- 238000000926 separation method Methods 0.000 description 24
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 230000005855 radiation Effects 0.000 description 21
- 239000013078 crystal Substances 0.000 description 15
- 230000001678 irradiating effect Effects 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 238000005253 cladding Methods 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910015363 Au—Sn Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000001771 vacuum deposition Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241000217377 Amblema plicata Species 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 235000005811 Viola adunca Nutrition 0.000 description 1
- 240000009038 Viola odorata Species 0.000 description 1
- 235000013487 Viola odorata Nutrition 0.000 description 1
- 235000002254 Viola papilionacea Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008260179A JP2009004820A (ja) | 2006-11-30 | 2008-10-06 | 窒化物系半導体素子およびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006323582 | 2006-11-30 | ||
| JP2008260179A JP2009004820A (ja) | 2006-11-30 | 2008-10-06 | 窒化物系半導体素子およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007283225A Division JP4573863B2 (ja) | 2006-11-30 | 2007-10-31 | 窒化物系半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009004820A JP2009004820A (ja) | 2009-01-08 |
| JP2009004820A5 true JP2009004820A5 (enExample) | 2010-08-19 |
Family
ID=39517443
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007283225A Expired - Fee Related JP4573863B2 (ja) | 2006-11-30 | 2007-10-31 | 窒化物系半導体素子の製造方法 |
| JP2008260179A Pending JP2009004820A (ja) | 2006-11-30 | 2008-10-06 | 窒化物系半導体素子およびその製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007283225A Expired - Fee Related JP4573863B2 (ja) | 2006-11-30 | 2007-10-31 | 窒化物系半導体素子の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP4573863B2 (enExample) |
| CN (1) | CN101202421A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010045076A (ja) * | 2008-08-08 | 2010-02-25 | Sanyo Electric Co Ltd | 発光素子の形成方法 |
| JP5670040B2 (ja) * | 2009-10-09 | 2015-02-18 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子 |
| JP5625355B2 (ja) * | 2010-01-07 | 2014-11-19 | 住友電気工業株式会社 | Ｉｉｉ族窒化物半導体レーザ素子、ｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
| JP5961989B2 (ja) * | 2011-12-02 | 2016-08-03 | 日亜化学工業株式会社 | 半導体レーザ素子及びその製造方法 |
| US8867582B2 (en) | 2012-04-04 | 2014-10-21 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
| DE102012102306B4 (de) * | 2012-03-19 | 2021-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung |
| DE102012103160A1 (de) | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
| CN108305918B (zh) * | 2017-01-12 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | 氮化物半导体发光器件及其制作方法 |
| DE102017117135A1 (de) | 2017-07-28 | 2019-01-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Laserdioden und Laserdiode |
| CN113131331A (zh) * | 2019-12-31 | 2021-07-16 | 华星光通科技股份有限公司 | 不连续脊状结构的半导体激光元件的制造方法 |
| WO2021251191A1 (ja) * | 2020-06-12 | 2021-12-16 | 日亜化学工業株式会社 | レーザダイオード素子及びその製造方法 |
| JP2022044464A (ja) * | 2020-09-07 | 2022-03-17 | ソニーグループ株式会社 | 半導体レーザおよび半導体レーザ装置 |
| JP2023111096A (ja) * | 2022-01-31 | 2023-08-10 | ヌヴォトンテクノロジージャパン株式会社 | 半導体レーザ素子及び半導体レーザ素子の製造方法 |
| CN115832870B (zh) * | 2022-11-09 | 2025-05-30 | 中国科学院半导体研究所 | 半导体激光器 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60123086A (ja) * | 1983-12-08 | 1985-07-01 | Nec Corp | 半導体レ−ザの製造方法 |
| JPS60144985A (ja) * | 1983-12-30 | 1985-07-31 | Fujitsu Ltd | 半導体発光素子の製造方法 |
| JPS62190892A (ja) * | 1986-02-18 | 1987-08-21 | Matsushita Electric Ind Co Ltd | 半導体レ−ザ装置の製造方法 |
| JPH01280388A (ja) * | 1988-05-06 | 1989-11-10 | Sharp Corp | 半導体素子の製造方法 |
| US5629233A (en) * | 1996-04-04 | 1997-05-13 | Lucent Technologies Inc. | Method of making III/V semiconductor lasers |
| JP4169821B2 (ja) * | 1998-02-18 | 2008-10-22 | シャープ株式会社 | 発光ダイオード |
| EP0977276A1 (en) * | 1998-07-08 | 2000-02-02 | Hewlett-Packard Company | Semiconductor device cleave initiation |
| JP2002190635A (ja) * | 2000-12-20 | 2002-07-05 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
| JP4703014B2 (ja) * | 2001-02-15 | 2011-06-15 | シャープ株式会社 | 窒化物半導体発光素子、光学装置、および半導体発光装置とその製造方法 |
| JP2003069152A (ja) * | 2001-06-15 | 2003-03-07 | Sony Corp | マルチビーム半導体レーザ素子 |
| JP2003017791A (ja) * | 2001-07-03 | 2003-01-17 | Sharp Corp | 窒化物半導体素子及びこの窒化物半導体素子の製造方法 |
| JP4518733B2 (ja) * | 2002-06-17 | 2010-08-04 | ソニー株式会社 | 窒化ガリウム系半導体レーザ素子の製造方法 |
| JP4385590B2 (ja) * | 2002-11-26 | 2009-12-16 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
| JP4539077B2 (ja) * | 2003-10-29 | 2010-09-08 | 日本電気株式会社 | 半導体素子の製造方法 |
| JP2006294975A (ja) * | 2005-04-13 | 2006-10-26 | Mitsubishi Electric Corp | 半導体レーザ |
-
2007
- 2007-10-31 JP JP2007283225A patent/JP4573863B2/ja not_active Expired - Fee Related
- 2007-11-30 CN CNA2007101861686A patent/CN101202421A/zh active Pending
-
2008
- 2008-10-06 JP JP2008260179A patent/JP2009004820A/ja active Pending
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