JP4558140B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4558140B2
JP4558140B2 JP2000134006A JP2000134006A JP4558140B2 JP 4558140 B2 JP4558140 B2 JP 4558140B2 JP 2000134006 A JP2000134006 A JP 2000134006A JP 2000134006 A JP2000134006 A JP 2000134006A JP 4558140 B2 JP4558140 B2 JP 4558140B2
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Japan
Prior art keywords
film
insulating film
forming
semiconductor film
insulating
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Expired - Fee Related
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JP2000134006A
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English (en)
Japanese (ja)
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JP2001319877A5 (enExample
JP2001319877A (ja
Inventor
舜平 山崎
康行 荒井
英臣 須沢
幸治 小野
徹 高山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000134006A priority Critical patent/JP4558140B2/ja
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Publication of JP2001319877A5 publication Critical patent/JP2001319877A5/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000134006A 2000-05-02 2000-05-02 半導体装置の作製方法 Expired - Fee Related JP4558140B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000134006A JP4558140B2 (ja) 2000-05-02 2000-05-02 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000134006A JP4558140B2 (ja) 2000-05-02 2000-05-02 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008108422A Division JP5063461B2 (ja) 2008-04-18 2008-04-18 Ｅｌ表示装置

Publications (3)

Publication Number Publication Date
JP2001319877A JP2001319877A (ja) 2001-11-16
JP2001319877A5 JP2001319877A5 (enExample) 2007-06-07
JP4558140B2 true JP4558140B2 (ja) 2010-10-06

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Family Applications (1)

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JP2000134006A Expired - Fee Related JP4558140B2 (ja) 2000-05-02 2000-05-02 半導体装置の作製方法

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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4526764B2 (ja) * 2002-01-17 2010-08-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の生産システム
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
KR100979926B1 (ko) 2002-03-05 2010-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체소자 및 그것을 사용한 반도체장치
US7592980B2 (en) 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4503246B2 (ja) * 2002-06-25 2010-07-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN103915318A (zh) 2014-03-17 2014-07-09 京东方科技集团股份有限公司 激光退火设备、多晶硅薄膜及其制作方法
JP6579086B2 (ja) * 2016-11-15 2019-09-25 信越半導体株式会社 デバイス形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58112333A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 半導体装置の製造方法
JPS61241909A (ja) * 1985-04-19 1986-10-28 Agency Of Ind Science & Technol Ｓｏｉ結晶形成法
JPH02130913A (ja) * 1988-11-11 1990-05-18 Seiko Epson Corp 薄膜半導体装置
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
JP3522381B2 (ja) * 1995-03-01 2004-04-26 株式会社半導体エネルギー研究所 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法
JP3216861B2 (ja) * 1995-04-10 2001-10-09 シャープ株式会社 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法
JPH10303128A (ja) * 1997-04-30 1998-11-13 Fujitsu Ltd 成膜方法

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JP2001319877A (ja) 2001-11-16

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