JP4536186B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4536186B2
JP4536186B2 JP32179399A JP32179399A JP4536186B2 JP 4536186 B2 JP4536186 B2 JP 4536186B2 JP 32179399 A JP32179399 A JP 32179399A JP 32179399 A JP32179399 A JP 32179399A JP 4536186 B2 JP4536186 B2 JP 4536186B2
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Japan
Prior art keywords
film
gate electrode
semiconductor
gate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP32179399A
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English (en)
Japanese (ja)
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JP2000216397A (ja
JP2000216397A5 (https=
Inventor
舜平 山崎
久 大谷
節男 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP32179399A priority Critical patent/JP4536186B2/ja
Publication of JP2000216397A publication Critical patent/JP2000216397A/ja
Publication of JP2000216397A5 publication Critical patent/JP2000216397A5/ja
Application granted granted Critical
Publication of JP4536186B2 publication Critical patent/JP4536186B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP32179399A 1998-11-16 1999-11-11 半導体装置の作製方法 Expired - Fee Related JP4536186B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32179399A JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-325719 1998-11-16
JP32571998 1998-11-16
JP32179399A JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000216397A JP2000216397A (ja) 2000-08-04
JP2000216397A5 JP2000216397A5 (https=) 2006-12-14
JP4536186B2 true JP4536186B2 (ja) 2010-09-01

Family

ID=26570596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32179399A Expired - Fee Related JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Country Status (1)

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JP (1) JP4536186B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576953B2 (en) 2014-02-03 2017-02-21 Samsung Electronics Co., Ltd. Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796745B1 (ko) * 2000-10-26 2008-01-22 삼성전자주식회사 배선 및 그 형성 방법과 배선을 포함하는 박막 트랜지스터기판 및 그 제조 방법
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5028723B2 (ja) * 2001-08-16 2012-09-19 奇美電子股▲ふん▼有限公司 薄膜トランジスタ、該薄膜トランジスタの製造方法、該薄膜トランジスタを含むアレイ基板、表示装置および該表示装置の駆動方式
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
JP2005294815A (ja) * 2004-03-12 2005-10-20 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び半導体装置
SG115733A1 (en) 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
JP5076550B2 (ja) 2006-04-03 2012-11-21 セイコーエプソン株式会社 半導体装置
JP5520911B2 (ja) * 2011-10-12 2014-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102187047B1 (ko) 2013-07-10 2020-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 구동 회로, 및 표시 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508216A (en) * 1992-06-24 1996-04-16 Seiko Epson Corporation Thin film transistor, solid device, display device and manufacturing method of a thin film transistor
JP2551724B2 (ja) * 1993-03-04 1996-11-06 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法
JP2510820B2 (ja) * 1993-03-04 1996-06-26 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9576953B2 (en) 2014-02-03 2017-02-21 Samsung Electronics Co., Ltd. Layout design system, semiconductor device fabricated by using the system and method for fabricating the semiconductor device

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Publication number Publication date
JP2000216397A (ja) 2000-08-04

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