JP2000216397A5 - - Google Patents

Download PDF

Info

Publication number
JP2000216397A5
JP2000216397A5 JP1999321793A JP32179399A JP2000216397A5 JP 2000216397 A5 JP2000216397 A5 JP 2000216397A5 JP 1999321793 A JP1999321793 A JP 1999321793A JP 32179399 A JP32179399 A JP 32179399A JP 2000216397 A5 JP2000216397 A5 JP 2000216397A5
Authority
JP
Japan
Prior art keywords
gate electrode
film
semiconductor
semiconductor layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999321793A
Other languages
English (en)
Japanese (ja)
Other versions
JP4536186B2 (ja
JP2000216397A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP32179399A priority Critical patent/JP4536186B2/ja
Priority claimed from JP32179399A external-priority patent/JP4536186B2/ja
Publication of JP2000216397A publication Critical patent/JP2000216397A/ja
Publication of JP2000216397A5 publication Critical patent/JP2000216397A5/ja
Application granted granted Critical
Publication of JP4536186B2 publication Critical patent/JP4536186B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP32179399A 1998-11-16 1999-11-11 半導体装置の作製方法 Expired - Fee Related JP4536186B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32179399A JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-325719 1998-11-16
JP32571998 1998-11-16
JP32179399A JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000216397A JP2000216397A (ja) 2000-08-04
JP2000216397A5 true JP2000216397A5 (https=) 2006-12-14
JP4536186B2 JP4536186B2 (ja) 2010-09-01

Family

ID=26570596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32179399A Expired - Fee Related JP4536186B2 (ja) 1998-11-16 1999-11-11 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4536186B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100796745B1 (ko) * 2000-10-26 2008-01-22 삼성전자주식회사 배선 및 그 형성 방법과 배선을 포함하는 박막 트랜지스터기판 및 그 제조 방법
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5028723B2 (ja) * 2001-08-16 2012-09-19 奇美電子股▲ふん▼有限公司 薄膜トランジスタ、該薄膜トランジスタの製造方法、該薄膜トランジスタを含むアレイ基板、表示装置および該表示装置の駆動方式
JP2004304167A (ja) 2003-03-20 2004-10-28 Advanced Lcd Technologies Development Center Co Ltd 配線、表示装置及び、これらの形成方法
JP2005294815A (ja) * 2004-03-12 2005-10-20 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び半導体装置
SG115733A1 (en) 2004-03-12 2005-10-28 Semiconductor Energy Lab Thin film transistor, semiconductor device, and method for manufacturing the same
JP5076550B2 (ja) 2006-04-03 2012-11-21 セイコーエプソン株式会社 半導体装置
JP5520911B2 (ja) * 2011-10-12 2014-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102187047B1 (ko) 2013-07-10 2020-12-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 구동 회로, 및 표시 장치
KR102224525B1 (ko) 2014-02-03 2021-03-08 삼성전자주식회사 레이아웃 디자인 시스템, 이를 이용하여 제조한 반도체 장치 및 그 반도체 장치의 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508216A (en) * 1992-06-24 1996-04-16 Seiko Epson Corporation Thin film transistor, solid device, display device and manufacturing method of a thin film transistor
JP2551724B2 (ja) * 1993-03-04 1996-11-06 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法
JP2510820B2 (ja) * 1993-03-04 1996-06-26 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP3586638B2 (ja) 半導体容量装置
JP2000183356A5 (https=)
TW498554B (en) Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor
JP2000216397A5 (https=)
JP3024092B2 (ja) 改善された半導体の接触部構造形成方法
JP2003324153A (ja) 半導体容量素子及びその製造方法
JP4097694B2 (ja) 受動素子を有する薄膜構造体を具える電子部品
JPH11195753A (ja) 半導体装置およびその製造方法
JPH11261031A5 (https=)
US6538282B1 (en) Semiconductor device and method for manufacturing semiconductor device
JP2000243975A5 (https=)
JP2687917B2 (ja) 半導体装置の製造方法
US6958541B2 (en) Low gate resistance layout procedure for RF transistor devices
KR20070082513A (ko) 반도체장치 및 그 제조 방법
JP2006053567A (ja) Ｔｆｔ−ｌｃｄの画素構造及びその製造方法
JP3623377B2 (ja) 半導体装置の製造方法
JPH06132536A (ja) 薄膜トランジスタ
KR0165340B1 (ko) 반도체 소자의 전기적 배선을 위한 접촉 구조 및 그 접촉 방법
JPS62147757A (ja) 抵抗形成法
JP4599603B2 (ja) トランジスタの製造方法
JPS599964A (ja) 半導体装置の電極および配線の形成方法
JPS6127658A (ja) 半導体装置及びその製造方法
JPS6337665A (ja) 半導体装置の製造方法
JPH0196947A (ja) 半導体装置及びその製造方法
TW462104B (en) Manufacturing method for integrating the copper wire and capacitor device