JP4531177B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4531177B2
JP4531177B2 JP37193399A JP37193399A JP4531177B2 JP 4531177 B2 JP4531177 B2 JP 4531177B2 JP 37193399 A JP37193399 A JP 37193399A JP 37193399 A JP37193399 A JP 37193399A JP 4531177 B2 JP4531177 B2 JP 4531177B2
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Japan
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region
film
island
semiconductor layer
insulating film
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Expired - Fee Related
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JP37193399A
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Japanese (ja)
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JP2000252474A (ja
JP2000252474A5 (enExample
Inventor
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP37193399A priority Critical patent/JP4531177B2/ja
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Publication of JP2000252474A5 publication Critical patent/JP2000252474A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP37193399A 1998-12-28 1999-12-27 半導体装置の作製方法 Expired - Fee Related JP4531177B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37193399A JP4531177B2 (ja) 1998-12-28 1999-12-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-374884 1998-12-28
JP37488498 1998-12-28
JP37193399A JP4531177B2 (ja) 1998-12-28 1999-12-27 半導体装置の作製方法

Publications (3)

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JP2000252474A JP2000252474A (ja) 2000-09-14
JP2000252474A5 JP2000252474A5 (enExample) 2007-02-22
JP4531177B2 true JP4531177B2 (ja) 2010-08-25

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JP37193399A Expired - Fee Related JP4531177B2 (ja) 1998-12-28 1999-12-27 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6599818B2 (en) 2000-10-10 2003-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method
KR100466964B1 (ko) 2001-12-27 2005-01-24 엘지.필립스 엘시디 주식회사 폴리실리콘 박막 제조방법
JP4722391B2 (ja) * 2003-12-04 2011-07-13 株式会社半導体エネルギー研究所 薄膜トランジスタの製造方法
KR101039024B1 (ko) * 2004-06-14 2011-06-03 삼성전자주식회사 유기 반도체를 이용한 박막 트랜지스터 표시판 및 그 제조방법
KR100875432B1 (ko) * 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05109737A (ja) * 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JP2720779B2 (ja) * 1993-12-28 1998-03-04 日本電気株式会社 薄膜トランジスタおよびその製造方法
JP3539821B2 (ja) * 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3942683B2 (ja) * 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3973723B2 (ja) * 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法

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