JP4514485B2 - 高周波電力増幅器 - Google Patents

高周波電力増幅器 Download PDF

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Publication number
JP4514485B2
JP4514485B2 JP2004080390A JP2004080390A JP4514485B2 JP 4514485 B2 JP4514485 B2 JP 4514485B2 JP 2004080390 A JP2004080390 A JP 2004080390A JP 2004080390 A JP2004080390 A JP 2004080390A JP 4514485 B2 JP4514485 B2 JP 4514485B2
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JP
Japan
Prior art keywords
voltage
collector
temperature
temperature compensation
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004080390A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005269351A (ja
JP2005269351A5 (enExample
Inventor
大樹 真家
一樹 立岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2004080390A priority Critical patent/JP4514485B2/ja
Priority to US11/076,525 priority patent/US7256653B2/en
Priority to DE602005019492T priority patent/DE602005019492D1/de
Priority to EP05005398A priority patent/EP1580881B1/en
Priority to KR1020050022177A priority patent/KR100640740B1/ko
Priority to CNA2005100591483A priority patent/CN1671043A/zh
Publication of JP2005269351A publication Critical patent/JP2005269351A/ja
Publication of JP2005269351A5 publication Critical patent/JP2005269351A5/ja
Application granted granted Critical
Publication of JP4514485B2 publication Critical patent/JP4514485B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L27/00—Modulated-carrier systems
    • H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
    • H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
    • H04L27/36—Modulator circuits; Transmitter circuits
    • H04L27/361—Modulation using a single or unspecified number of carriers, e.g. with separate stages of phase and amplitude modulation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216—Continuous control
    • H03F1/0222—Continuous control by using a signal derived from the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/004—Control by varying the supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/504—Indexing scheme relating to amplifiers the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/70—Gain control characterized by the gain control parameter
    • H03G2201/708—Gain control characterized by the gain control parameter being temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)
JP2004080390A 2004-03-19 2004-03-19 高周波電力増幅器 Expired - Fee Related JP4514485B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004080390A JP4514485B2 (ja) 2004-03-19 2004-03-19 高周波電力増幅器
US11/076,525 US7256653B2 (en) 2004-03-19 2005-03-10 High-frequency power amplifier and communication apparatus
EP05005398A EP1580881B1 (en) 2004-03-19 2005-03-11 High-frequency power amplifier and communication apparatus
DE602005019492T DE602005019492D1 (de) 2004-03-19 2005-03-11 Hochfrequenz Leistungsverstärker und Kommunikationseinrichtung
KR1020050022177A KR100640740B1 (ko) 2004-03-19 2005-03-17 고주파 전력 증폭기 및 통신장치
CNA2005100591483A CN1671043A (zh) 2004-03-19 2005-03-21 高频功率放大器和通信设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004080390A JP4514485B2 (ja) 2004-03-19 2004-03-19 高周波電力増幅器

Publications (3)

Publication Number Publication Date
JP2005269351A JP2005269351A (ja) 2005-09-29
JP2005269351A5 JP2005269351A5 (enExample) 2007-03-22
JP4514485B2 true JP4514485B2 (ja) 2010-07-28

Family

ID=34858351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004080390A Expired - Fee Related JP4514485B2 (ja) 2004-03-19 2004-03-19 高周波電力増幅器

Country Status (6)

Country Link
US (1) US7256653B2 (enExample)
EP (1) EP1580881B1 (enExample)
JP (1) JP4514485B2 (enExample)
KR (1) KR100640740B1 (enExample)
CN (1) CN1671043A (enExample)
DE (1) DE602005019492D1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190936B1 (en) 2003-05-15 2007-03-13 Marvell International Ltd. Voltage regulator for high performance RF systems
JP2007173982A (ja) * 2005-12-19 2007-07-05 Toshiba Corp 温度補償増幅器
CN101405941B (zh) * 2006-03-23 2011-06-22 松下电器产业株式会社 电压控制振荡电路
DE602006012806D1 (de) * 2006-04-27 2010-04-22 Harman Becker Automotive Sys Thermomanagement-Verfahren und System für Verstärker
TWI351015B (en) * 2006-07-07 2011-10-21 Realtek Semiconductor Corp Analog front end device with temperature compensation
WO2008023414A1 (en) * 2006-08-23 2008-02-28 Panasonic Corporation Polar modulation transmission apparatus and polar modulation transmission method
US7696826B2 (en) * 2006-12-04 2010-04-13 Skyworks Solutions, Inc. Temperature compensation of collector-voltage control RF amplifiers
TW200904015A (en) * 2007-03-15 2009-01-16 Powercast Corp Multiple frequency transmitter, receiver, and systems thereof
JP2011172206A (ja) * 2010-01-21 2011-09-01 Panasonic Corp 高周波電力増幅器及びそれを備える無線通信装置
US7994862B1 (en) * 2010-02-11 2011-08-09 Sige Semiconductor Inc. Circuit and method of temperature dependent power amplifier biasing
US7944296B1 (en) * 2010-03-12 2011-05-17 Samsung Electro-Mechanics Company Low power mode amplification with a transformer output matching and a virtual ground
CN101977022B (zh) * 2010-09-03 2014-07-16 中兴通讯股份有限公司 互补增强功率补偿方法、装置及通信设备
CN102185566B (zh) * 2011-01-21 2013-03-13 锐迪科创微电子（北京）有限公司 一种射频前端电路及具有该电路的移动终端
US9712125B2 (en) * 2015-02-15 2017-07-18 Skyworks Solutions, Inc. Power amplification system with shared common base biasing
CN108366419A (zh) * 2018-01-05 2018-08-03 京信通信系统（中国）有限公司 一种输出功率控制方法、控制器及输出功率调节装置
CN109283953B (zh) * 2018-09-17 2021-07-27 京信通信系统（中国）有限公司 一种射频拉远单元的加热方法及装置
EP3930184A1 (en) * 2020-06-26 2021-12-29 NXP USA, Inc. Amplifier circuit with temperature compensation
EP3930185A1 (en) 2020-06-26 2021-12-29 NXP USA, Inc. Amplifier circuit with an output limiter
CN111969965A (zh) * 2020-07-06 2020-11-20 广州慧智微电子有限公司 一种功率放大器的温度补偿电路及温度补偿方法
CN115133939B (zh) * 2021-03-24 2023-12-12 海能达通信股份有限公司 一种发射机及通信装置
JP7718120B2 (ja) 2021-06-29 2025-08-05 住友電気工業株式会社 増幅回路

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158180A (en) * 1978-04-13 1979-06-12 General Electric Company Temperature control circuit
JPH04592Y2 (enExample) * 1987-03-06 1992-01-09
JPH0828617B2 (ja) 1989-06-01 1996-03-21 松下電器産業株式会社 半導体増幅回路
DE69024182T2 (de) * 1989-06-30 1996-10-31 Nippon Telegraph & Telephone Linearer sender
JPH04278705A (ja) * 1991-03-07 1992-10-05 Nec Corp 高周波電力増幅器
JPH06152259A (ja) * 1992-11-12 1994-05-31 Nec Corp 送信電力制御方式
GB2279779B (en) * 1993-06-02 1997-03-05 Vtech Communications Ltd Amplifier power control system
JPH08185232A (ja) * 1994-12-28 1996-07-16 Nec Corp シャントレギュレータ
US6084468A (en) * 1997-10-06 2000-07-04 Motorola, Inc. Method and apparatus for high efficiency wideband power amplification
JP3314724B2 (ja) 1998-06-02 2002-08-12 日本電気株式会社 電力増幅回路および電力自動制御方法
JP2000040923A (ja) * 1998-07-22 2000-02-08 New Japan Radio Co Ltd マイクロ波送信機
US6295442B1 (en) * 1998-12-07 2001-09-25 Ericsson Inc. Amplitude modulation to phase modulation cancellation method in an RF amplifier
US6043707A (en) * 1999-01-07 2000-03-28 Motorola, Inc. Method and apparatus for operating a radio-frequency power amplifier as a variable-class linear amplifier
JP3999916B2 (ja) 1999-12-14 2007-10-31 東芝マイクロエレクトロニクス株式会社 トランジスタのバイアス回路
JP3532834B2 (ja) 2000-06-27 2004-05-31 富士通カンタムデバイス株式会社 高周波増幅器バイアス回路、高周波電力増幅器および通信装置
JP2003008365A (ja) * 2001-04-16 2003-01-10 Matsushita Electric Ind Co Ltd 電力増幅用回路、電力増幅用回路の制御方法、及び携帯端末装置
US6665525B2 (en) * 2001-05-29 2003-12-16 Ericsson Inc. High-level modulation method and apparatus
US6701138B2 (en) 2001-06-11 2004-03-02 Rf Micro Devices, Inc. Power amplifier control
JP3932259B2 (ja) * 2001-12-12 2007-06-20 株式会社ルネサステクノロジ 高周波電力増幅回路および無線通信用電子部品
US6566944B1 (en) * 2002-02-21 2003-05-20 Ericsson Inc. Current modulator with dynamic amplifier impedance compensation
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
US6917243B2 (en) * 2003-06-27 2005-07-12 Sige Semiconductor Inc. Integrated power amplifier circuit
JP2005027130A (ja) * 2003-07-04 2005-01-27 Renesas Technology Corp 高周波電力増幅回路のバイアス制御回路および高周波電力増幅用電子部品

Also Published As

Publication number Publication date
DE602005019492D1 (de) 2010-04-08
US20050208909A1 (en) 2005-09-22
JP2005269351A (ja) 2005-09-29
EP1580881A3 (en) 2008-05-28
EP1580881B1 (en) 2010-02-24
EP1580881A2 (en) 2005-09-28
CN1671043A (zh) 2005-09-21
KR20060043744A (ko) 2006-05-15
KR100640740B1 (ko) 2006-10-31
US7256653B2 (en) 2007-08-14

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