JP4495464B2 - 集積回路の製造方法 - Google Patents

集積回路の製造方法 Download PDF

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JP4495464B2
JP4495464B2 JP2003562972A JP2003562972A JP4495464B2 JP 4495464 B2 JP4495464 B2 JP 4495464B2 JP 2003562972 A JP2003562972 A JP 2003562972A JP 2003562972 A JP2003562972 A JP 2003562972A JP 4495464 B2 JP4495464 B2 JP 4495464B2
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JP2005516391A5 (US07060634-20060613-C00017.png
JP2005516391A (ja
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ランタラ ユハ
リード ジェイソン
トルマネン テーム
ヴィスワナタン ヌンガヴァラム
マーニネン アルト
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シレクス オサケユキチュア
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1005—Formation and after-treatment of dielectrics
    • H01L2221/101—Forming openings in dielectrics
    • H01L2221/1015—Forming openings in dielectrics for dual damascene structures
    • H01L2221/1031—Dual damascene by forming vias in the via-level dielectric prior to deposition of the trench-level dielectric
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    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
JP2003562972A 2002-01-17 2003-01-17 集積回路の製造方法 Expired - Fee Related JP4495464B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34995502P 2002-01-17 2002-01-17
US39541802P 2002-07-13 2002-07-13
US41457802P 2002-09-27 2002-09-27
PCT/US2003/001490 WO2003063205A2 (en) 2002-01-17 2003-01-17 Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications

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JP2005516391A JP2005516391A (ja) 2005-06-02
JP2005516391A5 JP2005516391A5 (US07060634-20060613-C00017.png) 2006-03-09
JP4495464B2 true JP4495464B2 (ja) 2010-07-07

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EP (1) EP1490454B1 (US07060634-20060613-C00017.png)
JP (1) JP4495464B2 (US07060634-20060613-C00017.png)
KR (1) KR100985272B1 (US07060634-20060613-C00017.png)
AU (1) AU2003216067A1 (US07060634-20060613-C00017.png)
WO (1) WO2003063205A2 (US07060634-20060613-C00017.png)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498464B1 (ko) * 2002-11-22 2005-07-01 삼성전자주식회사 불소 함유 감광성 폴리머, 이를 포함하는 레지스트 조성물및 레지스트 조성물을 이용한 패턴 형성 방법
US7514709B2 (en) * 2003-04-11 2009-04-07 Silecs Oy Organo-silsesquioxane polymers for forming low-k dielectrics
TWI220774B (en) * 2003-11-03 2004-09-01 Univ Nat Sun Yat Sen Method for patterning low dielectric constant film and method for manufacturing dual damascene structure
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
DE602004030379D1 (de) * 2003-12-23 2011-01-13 Silecs Oy Adamantylmonomere und polymere für low-k-dielektrik anwendungen
CN101044604B (zh) * 2004-08-31 2011-11-16 西雷克斯有限公司 新聚有机硅氧烷介电材料
US7332822B2 (en) * 2004-11-12 2008-02-19 Delphi Technologies, Inc. Flip chip system with organic/inorganic hybrid underfill composition
US20060199301A1 (en) * 2005-03-07 2006-09-07 Basheer Rafil A Methods of making a curable composition having low coefficient of thermal expansion and an integrated circuit and a curable composition and integrated circuit made there from
TW200736855A (en) * 2006-03-22 2007-10-01 Quanta Display Inc Method of fabricating photoresist thinner
JP4407673B2 (ja) * 2006-07-10 2010-02-03 セイコーエプソン株式会社 バンク構造、電子回路、及び電子デバイスの製造方法、並びにパターン形成方法
US7501353B2 (en) * 2006-12-22 2009-03-10 International Business Machines Corporation Method of formation of a damascene structure utilizing a protective film
TWI434891B (zh) * 2007-02-22 2014-04-21 Silecs Oy 積體電路用高矽含量矽氧烷聚合物
KR100881458B1 (ko) * 2007-02-23 2009-02-06 삼성전자주식회사 마이크로렌즈 보호패턴을 갖는 촬상소자, 카메라모듈, 및그 제조방법
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US20080206997A1 (en) * 2007-02-26 2008-08-28 Semiconductor Energy Laboratory Co., Ltd. Method for Manufacturing Insulating Film and Method for Manufacturing Semiconductor Device
JP5330697B2 (ja) * 2007-03-19 2013-10-30 株式会社リコー 機能素子のパッケージ及びその製造方法
JP2011511881A (ja) 2007-06-28 2011-04-14 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 二酸化ケイ素ギャップ充填材のための前駆体
US8084862B2 (en) 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US7709370B2 (en) * 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8618663B2 (en) * 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
KR101371998B1 (ko) 2008-01-25 2014-03-07 삼성전자주식회사 절연체 형성용 조성물 및 이를 이용하는 유기 절연체
US8029971B2 (en) * 2008-03-13 2011-10-04 International Business Machines Corporation Photopatternable dielectric materials for BEOL applications and methods for use
TWI491657B (zh) 2008-04-28 2015-07-11 Basf Se 可由雙聚合得到之低ｋ介電質
JP5096233B2 (ja) * 2008-05-30 2012-12-12 信越化学工業株式会社 有機酸化ケイ素系微粒子及びその製造方法、多孔質膜形成用組成物、多孔質膜及びその形成方法、並びに半導体装置
US20110068332A1 (en) * 2008-08-04 2011-03-24 The Trustees Of Princeton University Hybrid Dielectric Material for Thin Film Transistors
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US7968975B2 (en) * 2008-08-08 2011-06-28 International Business Machines Corporation Metal wiring structure for integration with through substrate vias
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US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
JP5675581B2 (ja) * 2011-12-27 2015-02-25 東レ・ダウコーニング株式会社 有機珪素化合物の製造方法
KR101567702B1 (ko) * 2014-06-27 2015-11-10 재단법인 다차원 스마트 아이티 융합시스템 연구단 듀얼 애퍼처 필터 및 그 제작 방법
US9711351B2 (en) * 2014-09-11 2017-07-18 Asm Ip Holding B.V. Process for densifying nitride film
WO2016167892A1 (en) 2015-04-13 2016-10-20 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
KR20230117645A (ko) 2017-04-26 2023-08-08 오티아이 루미오닉스 인크. 표면의 코팅을 패턴화하는 방법 및 패턴화된 코팅을포함하는 장치
JP6848825B2 (ja) * 2017-11-20 2021-03-24 信越化学工業株式会社 光硬化性組成物およびその硬化物
US11086048B1 (en) 2020-02-07 2021-08-10 HyperLight Corporation Lithium niobate devices fabricated using deep ultraviolet radiation
US11899293B2 (en) 2020-02-07 2024-02-13 HyperLight Corporation Electro optical devices fabricated using deep ultraviolet radiation

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
US4507384A (en) * 1983-04-18 1985-03-26 Nippon Telegraph & Telephone Public Corporation Pattern forming material and method for forming pattern therewith
US4983419A (en) * 1988-08-05 1991-01-08 Siemens Aktiengesellschaft Method for generating thin layers on a silicone base
JPH0821579B2 (ja) * 1989-04-19 1996-03-04 旭硝子株式会社 半導体素子・集積回路装置
JP2718231B2 (ja) 1990-01-10 1998-02-25 三菱電機株式会社 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法
US5449553A (en) * 1992-03-06 1995-09-12 The United States Of America As Represented By The Secretary Of The Navy Nontoxic antifouling systems
JP4082626B2 (ja) * 1996-11-19 2008-04-30 松下電器産業株式会社 層間絶縁膜形成用材料及び層間絶縁膜
EP0849796A3 (en) * 1996-12-17 1999-09-01 Texas Instruments Incorporated Improvements in or relating to integrated circuits
JP3919862B2 (ja) * 1996-12-28 2007-05-30 Ａｚエレクトロニックマテリアルズ株式会社 低誘電率シリカ質膜の形成方法及び同シリカ質膜
US6051321A (en) * 1997-10-24 2000-04-18 Quester Technology, Inc. Low dielectric constant materials and method
US6126733A (en) * 1997-10-31 2000-10-03 Alliedsignal Inc. Alcohol based precursors for producing nanoporous silica thin films
JP2000077399A (ja) * 1998-01-21 2000-03-14 Nippon Steel Corp シリカ系多孔質膜およびその製造方法
US20060258176A1 (en) * 1998-02-05 2006-11-16 Asm Japan K.K. Method for forming insulation film
US6068884A (en) * 1998-04-28 2000-05-30 Silcon Valley Group Thermal Systems, Llc Method of making low κ dielectric inorganic/organic hybrid films
US6448655B1 (en) * 1998-04-28 2002-09-10 International Business Machines Corporation Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
JPH11322992A (ja) * 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
EP1026213B1 (en) 1998-09-01 2014-11-05 JGC Catalysts and Chemicals Ltd. Coating fluid for forming low-permittivity silica-based coating film and substrate with low-permittivity coating film
US6281115B1 (en) * 1998-11-16 2001-08-28 Industrial Technology Research Institute Sidewall protection for a via hole formed in a photosensitive, low dielectric constant layer
JP4739473B2 (ja) 1999-01-28 2011-08-03 日立化成工業株式会社 シリカ系被膜形成用塗布液、シリカ系被膜及びこれを用いた半導体装置
JP2001049184A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001049176A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
JP2001049179A (ja) * 1999-06-01 2001-02-20 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
US6696538B2 (en) * 1999-07-27 2004-02-24 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP4427840B2 (ja) * 1999-09-17 2010-03-10 ソニー株式会社 半導体装置及びその製造方法
JP4022802B2 (ja) * 1999-09-29 2007-12-19 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法および絶縁膜
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
JP2001164184A (ja) * 1999-12-10 2001-06-19 Fujitsu Ltd 被覆形成用塗布液及び被覆膜及びそれを用いた半導体装置
US20040038048A1 (en) * 2000-02-02 2004-02-26 Lg Chemical Ltd. Semiconductor interlayer dielectric material and a semiconductor device using the same
JP2001287910A (ja) 2000-04-04 2001-10-16 Asahi Kasei Corp 多孔質ケイ素酸化物塗膜の製造方法
JP2002003784A (ja) * 2000-04-17 2002-01-09 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4840547B2 (ja) 2000-04-17 2011-12-21 Ｊｓｒ株式会社 絶縁膜形成用組成物、絶縁膜の形成方法およびシリカ系膜
JP2001329216A (ja) 2000-05-22 2001-11-27 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP2002026121A (ja) * 2000-06-30 2002-01-25 Tokyo Electron Ltd 半導体装置およびその製造方法、絶縁膜の形成方法
KR100738774B1 (ko) * 2000-08-28 2007-07-12 제이에스알 가부시끼가이샤 화학 기계 연마 스토퍼막, 그의 제조 방법 및 화학 기계연마 방법
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6383912B1 (en) * 2000-10-23 2002-05-07 Honeywell International, Inc. Fabrication method of integrated circuits with multiple low dielectric-constant intermetal dielectrics
JP4863182B2 (ja) * 2002-01-31 2012-01-25 東ソー株式会社 有機シラン化合物を含んでなる絶縁膜用材料、その製造方法および半導体デバイス

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