DE602004030379D1 - Adamantylmonomere und polymere für low-k-dielektrik anwendungen - Google Patents

Adamantylmonomere und polymere für low-k-dielektrik anwendungen

Info

Publication number
DE602004030379D1
DE602004030379D1 DE602004030379T DE602004030379T DE602004030379D1 DE 602004030379 D1 DE602004030379 D1 DE 602004030379D1 DE 602004030379 T DE602004030379 T DE 602004030379T DE 602004030379 T DE602004030379 T DE 602004030379T DE 602004030379 D1 DE602004030379 D1 DE 602004030379D1
Authority
DE
Germany
Prior art keywords
low
adamantylmonomers
polymers
compounds
dielectric applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004030379T
Other languages
English (en)
Inventor
Jyri Paulasaari
Juha Rantala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silecs Oy
Original Assignee
Silecs Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silecs Oy filed Critical Silecs Oy
Publication of DE602004030379D1 publication Critical patent/DE602004030379D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
DE602004030379T 2003-12-23 2004-12-23 Adamantylmonomere und polymere für low-k-dielektrik anwendungen Active DE602004030379D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53165903P 2003-12-23 2003-12-23
PCT/FI2004/000799 WO2005061587A1 (en) 2003-12-23 2004-12-23 Adamantyl monomers and polymers for low-k-dielectric applications

Publications (1)

Publication Number Publication Date
DE602004030379D1 true DE602004030379D1 (de) 2011-01-13

Family

ID=34710244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030379T Active DE602004030379D1 (de) 2003-12-23 2004-12-23 Adamantylmonomere und polymere für low-k-dielektrik anwendungen

Country Status (5)

Country Link
EP (1) EP1711550B1 (de)
KR (1) KR101219548B1 (de)
AT (1) ATE490282T1 (de)
DE (1) DE602004030379D1 (de)
WO (1) WO2005061587A1 (de)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU763347A1 (ru) * 1978-06-19 1980-09-15 Институт Химии Башкирского Филиала Ан Ссср Способ получени триметилсилилдиметиладамантана
JPS63267624A (ja) * 1988-04-05 1988-11-04 Ricoh Co Ltd 複写機等における中間トレイ
JPH0726193A (ja) * 1993-06-25 1995-01-27 Matsushita Electric Ind Co Ltd 誘電体用塗料及びフィルムコンデンサ
KR100618301B1 (ko) * 1998-09-01 2006-08-31 쇼꾸바이 카세이 고교 가부시키가이샤 낮은 유전상수를 지니는 실리카-포함 필름을 형성하기위한 코팅 액체 및 그의 필름으로 코팅된 기질
JP2000302791A (ja) * 1999-04-20 2000-10-31 Fujitsu Ltd シリコン化合物、絶縁膜形成材料及び半導体装置
AU2002323040A1 (en) * 2001-08-06 2003-02-24 Advanced Technology Material, Inc. Low-k dielectric thin films and chemical vapor deposition method of making same
AU2003216067A1 (en) * 2002-01-17 2003-09-02 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US20040002617A1 (en) * 2002-01-17 2004-01-01 Rantala Juha T. Integrated circuits having organic-inorganic dielectric materials and methods for forming such integrated circuits
TW200415167A (en) * 2002-07-25 2004-08-16 Sumitomo Chemical Co Adamantane compounds and insulating film forming coating solutions
JP4204880B2 (ja) * 2003-03-04 2009-01-07 出光興産株式会社 ビス（３−アミノ−４−ヒドロキシフェニル）アダマンタン誘導体及びその製造方法
JP4236495B2 (ja) * 2003-03-26 2009-03-11 ダイセル化学工業株式会社 アダマンタントリカルボン酸誘導体
JP2004307803A (ja) * 2003-03-26 2004-11-04 Daicel Chem Ind Ltd 絶縁膜形成材料及び絶縁膜
JP2004315461A (ja) * 2003-04-18 2004-11-11 Rikogaku Shinkokai 自己組織化単分子膜の製造方法
US7622399B2 (en) * 2003-09-23 2009-11-24 Silecs Oy Method of forming low-k dielectrics using a rapid curing process

Also Published As

Publication number Publication date
WO2005061587A1 (en) 2005-07-07
EP1711550B1 (de) 2010-12-01
ATE490282T1 (de) 2010-12-15
EP1711550A1 (de) 2006-10-18
KR101219548B1 (ko) 2013-01-21
KR20060127905A (ko) 2006-12-13

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DE602004030379D1 (de) Adamantylmonomere und polymere für low-k-dielektrik anwendungen