JP4490938B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4490938B2
JP4490938B2 JP2006116779A JP2006116779A JP4490938B2 JP 4490938 B2 JP4490938 B2 JP 4490938B2 JP 2006116779 A JP2006116779 A JP 2006116779A JP 2006116779 A JP2006116779 A JP 2006116779A JP 4490938 B2 JP4490938 B2 JP 4490938B2
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Japan
Prior art keywords
processing
plasma
lot
processing chamber
wafer
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JP2006116779A
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Japanese (ja)
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JP2006210948A (ja
JP2006210948A5 (enExample
Inventor
潤一 田中
浩之 橘内
秀之 山本
祥二 幾原
昭 鹿子嶋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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JP2006116779A 2006-04-20 2006-04-20 プラズマ処理装置 Expired - Fee Related JP4490938B2 (ja)

Priority Applications (1)

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JP2006116779A JP4490938B2 (ja) 2006-04-20 2006-04-20 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006116779A JP4490938B2 (ja) 2006-04-20 2006-04-20 プラズマ処理装置

Related Parent Applications (1)

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JP2004054229A Division JP4490704B2 (ja) 2004-02-27 2004-02-27 プラズマ処理方法

Publications (3)

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JP2006210948A JP2006210948A (ja) 2006-08-10
JP2006210948A5 JP2006210948A5 (enExample) 2009-01-08
JP4490938B2 true JP4490938B2 (ja) 2010-06-30

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ID=36967350

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JP2006116779A Expired - Fee Related JP4490938B2 (ja) 2006-04-20 2006-04-20 プラズマ処理装置

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JP (1) JP4490938B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008153365A (ja) * 2006-12-15 2008-07-03 Renesas Technology Corp 半導体装置の製造方法
JP5161469B2 (ja) * 2007-03-16 2013-03-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4646941B2 (ja) * 2007-03-30 2011-03-09 東京エレクトロン株式会社 基板処理装置及びその処理室内の状態安定化方法
JP2010098053A (ja) * 2008-10-15 2010-04-30 Tokyo Electron Ltd クリーニング方法及び記録媒体
JP5712741B2 (ja) * 2011-03-31 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
WO2019053806A1 (ja) 2017-09-13 2019-03-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP7106358B2 (ja) * 2018-06-08 2022-07-26 東京エレクトロン株式会社 プラズマ処理装置及び温度制御方法
CN111312411B (zh) * 2018-12-11 2022-10-21 核工业西南物理研究院 液化惰性气体射流注入防护等离子体破裂的方法
CN113498546B (zh) * 2020-02-03 2024-04-12 株式会社日立高新技术 等离子处理装置以及等离子处理方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888095A (ja) * 1994-09-19 1996-04-02 Hitachi Ltd プラズマ処理装置及びその制御方法
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
JPH10130872A (ja) * 1996-10-29 1998-05-19 Sumitomo Metal Ind Ltd プラズマ処理方法
EP1171907A1 (en) * 2000-01-13 2002-01-16 Philips Semiconductors Inc. Method of performing plasma warm-up on semiconductor wafers
JP3660582B2 (ja) * 2000-12-04 2005-06-15 株式会社日立製作所 プラズマエッチング処理装置

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Publication number Publication date
JP2006210948A (ja) 2006-08-10

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