JP4455874B2 - クランプ回路を有するイメージセンサ - Google Patents
クランプ回路を有するイメージセンサ Download PDFInfo
- Publication number
- JP4455874B2 JP4455874B2 JP2003433193A JP2003433193A JP4455874B2 JP 4455874 B2 JP4455874 B2 JP 4455874B2 JP 2003433193 A JP2003433193 A JP 2003433193A JP 2003433193 A JP2003433193 A JP 2003433193A JP 4455874 B2 JP4455874 B2 JP 4455874B2
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- JP
- Japan
- Prior art keywords
- voltage
- image sensor
- signal
- clamp
- reset signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 5
- 230000002596 correlated effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000001276 controlling effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
1.Tx、Rx、Sxをターンオフさせる。この場合、フォトダイオードPDは完全な空乏状態である。
2.光電荷(Photogenerated Charge)を低電圧フォトダイオードPDに集束する。
3.適正なインテグレーション(Integration)時間後にRxをターンオンさせ、フローティングノードFNを1次リセットさせる。
4.Sxをターンオンさせて、単位画素をオンさせる。
5.ソースフォロアバッファであるDxの出力電圧V1を測定する。この測定値は、フローティングノードFNの直流電位変化を意味する。
6.Txをターンオンさせる。
7.全ての光電荷をフローティングノードFNに伝送する。
8.Txをターンオフさせる。
9.Dxの出力電圧V2を測定する。
10.出力信号(V1-V2)は、V1とV2との差から得られた光電荷移送の結果であり、これはノイズが排除された純粋な信号値となる。
11.前記1から10の過程を繰り返す。但し、フォトダイオードPDは前記7の過程で完全な空乏状態となっている。上述したCDSでは、このような動作が実行される。
31 D/A変換器
32 インバータ
33 第1スイッチング素子
34 第2スイッチング素子
Claims (3)
- M×Nサイズの単位画素のアレイを有し、前記単位画素のリセット信号と光信号によるデータ信号との差を利用して、被写体に対するデータを出力する相関二重サンプリング方式のイメージセンサにおいて、
前記リセット信号と前記データ信号とを各々出力する複数個の単位画素と、
前記リセット信号を所定の電圧レベルにクランプするため、前記複数個の単位画素の出力端に接続された複数個のクランプトランジスタと、
前記複数個のクランプトランジスタのゲート電圧を制御する電圧調節部と
を含み、
前記電圧調節部が、
デジタルコードを受信して、前記電圧レベルを調節するのに用いられるアナログ電圧値を出力するD/A変換器と、
該D/A変換器とクランプトランジスタのゲートとの間に接続され、第1制御信号によって開閉される第1スイッチング素子と、
接地端と前記クランプトランジスタのゲートとの間に接続され、反転された前記第1制御信号によって開閉される第2スイッチング素子と
を含むものである、イメージセンサ。 - 前記電圧調節部が、前記第1制御信号を受信して、前記第2スイッチング素子に前記反転した第1制御信号を提供するインバータを更に含んで構成されていることを特徴とする請求項1に記載のイメージセンサ。
- 前記クランプトランジスタが、前記M×Nサイズの単位画素アレイ構造において、各カラムごとに設けられ、前記電圧調節部が、イメージセンサチップ全体に対して一つ設けられていることを特徴とする請求項1に記載のイメージセンサ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030002189A KR100574891B1 (ko) | 2003-01-13 | 2003-01-13 | 클램프 회로를 갖는 이미지센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004222273A JP2004222273A (ja) | 2004-08-05 |
JP4455874B2 true JP4455874B2 (ja) | 2010-04-21 |
Family
ID=32822582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003433193A Expired - Lifetime JP4455874B2 (ja) | 2003-01-13 | 2003-12-26 | クランプ回路を有するイメージセンサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7394491B2 (ja) |
JP (1) | JP4455874B2 (ja) |
KR (1) | KR100574891B1 (ja) |
Families Citing this family (28)
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KR100809680B1 (ko) * | 2004-02-04 | 2008-03-06 | 삼성전자주식회사 | Cmos 이미지 센서의 클램프 회로 |
US7667171B2 (en) | 2004-07-06 | 2010-02-23 | Panasonic Corporation | Solid-state imaging device |
US7916186B2 (en) * | 2005-04-07 | 2011-03-29 | Micron Technology, Inc. | Anti-eclipse circuitry with tracking of floating diffusion reset level |
JP5340374B2 (ja) * | 2005-06-09 | 2013-11-13 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5247007B2 (ja) | 2005-06-09 | 2013-07-24 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP4834345B2 (ja) * | 2005-08-01 | 2011-12-14 | キヤノン株式会社 | 撮像装置及びその制御方法及びプログラム及び記憶媒体 |
US7573519B2 (en) | 2005-10-26 | 2009-08-11 | Eastman Kodak Company | Method for correcting eclipse or darkle |
JP4396655B2 (ja) | 2006-03-06 | 2010-01-13 | ソニー株式会社 | 固体撮像装置 |
JP4185949B2 (ja) | 2006-08-08 | 2008-11-26 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
JP4194633B2 (ja) | 2006-08-08 | 2008-12-10 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5251881B2 (ja) | 2007-10-09 | 2013-07-31 | 株式会社ニコン | 撮像装置 |
JP4997137B2 (ja) * | 2008-02-20 | 2012-08-08 | オリンパス株式会社 | 固体撮像装置 |
JP5531417B2 (ja) | 2009-02-12 | 2014-06-25 | 株式会社ニコン | 固体撮像装置 |
JP2010251829A (ja) * | 2009-04-10 | 2010-11-04 | Olympus Corp | 固体撮像素子、カメラシステム、及び信号読み出し方法 |
JP5218309B2 (ja) * | 2009-07-14 | 2013-06-26 | ソニー株式会社 | 固体撮像素子およびその制御方法、並びにカメラシステム |
JP2011176762A (ja) * | 2010-02-25 | 2011-09-08 | Panasonic Corp | 固体撮像装置およびカメラ |
TWI527450B (zh) * | 2012-05-01 | 2016-03-21 | Sony Corp | Image sensor, and image sensor control method |
US8618865B1 (en) * | 2012-11-02 | 2013-12-31 | Palo Alto Research Center Incorporated | Capacitive imaging device with active pixels |
KR102178825B1 (ko) | 2013-11-15 | 2020-11-13 | 삼성전자 주식회사 | 픽셀 출력 레벨 제어 장치 및 이를 적용하는 이미지 센서 |
US10101373B2 (en) | 2014-04-21 | 2018-10-16 | Palo Alto Research Center Incorporated | Capacitive imaging device with active pixels and method |
JP6399871B2 (ja) * | 2014-09-11 | 2018-10-03 | キヤノン株式会社 | 撮像装置及びその制御方法 |
JP2017117828A (ja) * | 2015-12-21 | 2017-06-29 | ソニー株式会社 | 固体撮像素子および電子装置 |
WO2018046617A1 (en) * | 2016-09-07 | 2018-03-15 | Starship Technologies Oü | Method and system for calibrating multiple cameras |
US10523885B2 (en) * | 2016-12-20 | 2019-12-31 | Foveon, Inc. | Column line clamp circuit for imaging array |
KR102324224B1 (ko) * | 2017-06-28 | 2021-11-10 | 삼성전자주식회사 | 이미지 센서 및 그것에 포함되는 전자 회로 |
JP7345301B2 (ja) * | 2019-07-18 | 2023-09-15 | キヤノン株式会社 | 光電変換装置および機器 |
US11430821B2 (en) * | 2020-12-07 | 2022-08-30 | Semiconductor Components Industries, Llc | Image sensor with active clamp to suppress transfer gate feedthrough |
US20220408040A1 (en) * | 2021-06-21 | 2022-12-22 | Ams Sensors Belgium Bvba | Imaging pixel to mitigate cross-talk effects |
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-
2003
- 2003-01-13 KR KR1020030002189A patent/KR100574891B1/ko active IP Right Grant
- 2003-12-26 JP JP2003433193A patent/JP4455874B2/ja not_active Expired - Lifetime
- 2003-12-30 US US10/749,340 patent/US7394491B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2004222273A (ja) | 2004-08-05 |
US20040155973A1 (en) | 2004-08-12 |
KR100574891B1 (ko) | 2006-04-27 |
KR20040065331A (ko) | 2004-07-22 |
US7394491B2 (en) | 2008-07-01 |
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