JP4444368B1 - 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム - Google Patents

集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム Download PDF

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Publication number
JP4444368B1
JP4444368B1 JP2009178077A JP2009178077A JP4444368B1 JP 4444368 B1 JP4444368 B1 JP 4444368B1 JP 2009178077 A JP2009178077 A JP 2009178077A JP 2009178077 A JP2009178077 A JP 2009178077A JP 4444368 B1 JP4444368 B1 JP 4444368B1
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semiconductor laser
wavelength
semiconductor
optical
laser device
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JP2009178077A
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Japanese (ja)
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JP2011035060A (ja
Inventor
竜也 木本
智一 向原
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THE FURUKAW ELECTRIC CO., LTD.
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THE FURUKAW ELECTRIC CO., LTD.
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Priority to JP2009178077A priority Critical patent/JP4444368B1/ja
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Publication of JP4444368B1 publication Critical patent/JP4444368B1/ja
Priority to EP10804227.6A priority patent/EP2461434A4/de
Priority to PCT/JP2010/061396 priority patent/WO2011013480A1/ja
Priority to CN201080033676.0A priority patent/CN102474069B/zh
Publication of JP2011035060A publication Critical patent/JP2011035060A/ja
Priority to US13/360,851 priority patent/US8457169B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
    • G02B6/4236—Fixing or mounting methods of the aligned elements
    • G02B6/4245—Mounting of the opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12121—Laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12195—Tapering
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29344—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by modal interference or beating, i.e. of transverse modes, e.g. zero-gap directional coupler, MMI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP2009178077A 2009-07-30 2009-07-30 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム Active JP4444368B1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009178077A JP4444368B1 (ja) 2009-07-30 2009-07-30 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム
EP10804227.6A EP2461434A4 (de) 2009-07-30 2010-07-05 Integriertes halbleiterlaserelement, halbleiterlasermodul und optisches übertragungssystem
PCT/JP2010/061396 WO2011013480A1 (ja) 2009-07-30 2010-07-05 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム
CN201080033676.0A CN102474069B (zh) 2009-07-30 2010-07-05 集成型半导体激光元件、半导体激光组件及光传输系统
US13/360,851 US8457169B2 (en) 2009-07-30 2012-01-30 Integrated semiconductor laser element, semiconductor laser module, and optical transmission system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009178077A JP4444368B1 (ja) 2009-07-30 2009-07-30 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム

Publications (2)

Publication Number Publication Date
JP4444368B1 true JP4444368B1 (ja) 2010-03-31
JP2011035060A JP2011035060A (ja) 2011-02-17

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JP2009178077A Active JP4444368B1 (ja) 2009-07-30 2009-07-30 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム

Country Status (5)

Country Link
US (1) US8457169B2 (de)
EP (1) EP2461434A4 (de)
JP (1) JP4444368B1 (de)
CN (1) CN102474069B (de)
WO (1) WO2011013480A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8548024B2 (en) 2011-02-15 2013-10-01 Furukawa Electric Co., Ltd. Semiconductor laser module
JP2020112400A (ja) * 2019-01-10 2020-07-27 株式会社デンソー 距離測定装置及びそのｓｎ比を改善する方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4444368B1 (ja) 2009-07-30 2010-03-31 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム
JP2013070027A (ja) 2011-09-08 2013-04-18 Furukawa Electric Co Ltd:The 光集積デバイス及び光集積デバイスの製造方法
JP5100881B1 (ja) * 2011-11-07 2012-12-19 古河電気工業株式会社 集積型半導体レーザ素子
WO2013180291A1 (ja) 2012-05-31 2013-12-05 古河電気工業株式会社 半導体レーザモジュール
JP6265895B2 (ja) 2012-06-22 2018-01-24 古河電気工業株式会社 光素子モジュール
JP2014041889A (ja) * 2012-08-22 2014-03-06 Mitsubishi Electric Corp 光半導体装置
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
JP2014236161A (ja) * 2013-06-04 2014-12-15 古河電気工業株式会社 半導体光素子およびその製造方法ならびに集積型半導体光素子
US9742152B2 (en) 2013-11-08 2017-08-22 Nanjing University Tunable semiconductor laser based on reconstruction-equivalent chirp and series mode or series and parallel hybrid integration, and preparation thereof
JP6070526B2 (ja) * 2013-12-11 2017-02-01 豊田合成株式会社 半導体装置の製造方法
JPWO2015099176A1 (ja) * 2013-12-26 2017-03-23 古河電気工業株式会社 半導体レーザアレイ、半導体レーザ素子、半導体レーザモジュール、および波長可変レーザアセンブリ
US9379819B1 (en) * 2014-01-03 2016-06-28 Google Inc. Systems and methods for reducing temperature in an optical signal source co-packaged with a driver
JPWO2015122367A1 (ja) * 2014-02-13 2017-03-30 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュール
CN103887710A (zh) * 2014-03-04 2014-06-25 维林光电(苏州)有限公司 多光束激光器合束装置及其方法
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
CN104966990A (zh) * 2015-07-11 2015-10-07 苏州至禅光纤传感技术有限公司 一种基于soa负压吸收的光脉冲产生方法
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation
CN110088995B (zh) * 2016-12-19 2021-06-04 古河电气工业株式会社 光集成元件以及光发送机模块
JP7145765B2 (ja) 2017-02-07 2022-10-03 古河電気工業株式会社 光導波路構造
US10761391B2 (en) * 2017-05-23 2020-09-01 The United States Of America As Represented By The Secretary Of The Air Force Optical attenuator
CN107565384B (zh) * 2017-09-07 2019-05-03 南京大学（苏州）高新技术研究院 一种混合集成双平衡调制dfb激光器及双平衡调制系统
US11929590B2 (en) 2018-11-06 2024-03-12 Mitsubishi Electric Corporation Method for producing optical semiconductor device
JPWO2020213066A1 (ja) * 2019-04-16 2021-12-09 日本電信電話株式会社 可視光光源
JP7384067B2 (ja) 2020-02-19 2023-11-21 ウシオ電機株式会社 半導体レーザ装置
CN112993747B (zh) * 2021-02-08 2022-05-27 苏州长光华芯光电技术股份有限公司 一种波长锁定半导体激光器系统

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09288287A (ja) * 1996-04-23 1997-11-04 Hitachi Ltd 半導体光増幅素子
JPH10308556A (ja) * 1997-05-02 1998-11-17 Nec Corp 半導体光素子およびその製造方法
JPH1174604A (ja) * 1997-08-29 1999-03-16 Furukawa Electric Co Ltd:The 半導体導波路型光素子
JP2003014963A (ja) * 2001-06-27 2003-01-15 Nec Corp 半導体光集積素子とその製造方法並びに光通信用モジュール
WO2003077383A1 (fr) * 2002-03-13 2003-09-18 Nikon Corporation Dispositif d'amplification lumineuse, son procede de fabrication, source de lumiere mettant ce dispositif en application, dispositif de traitement lumineux utilisant la source de lumiere et dispositif d'exposition utilisant cette source de lumiere
JP2007194340A (ja) * 2006-01-18 2007-08-02 Fujitsu Ltd 光半導体素子及びその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003550A (en) * 1990-03-09 1991-03-26 Spectra Diode Laboratories, Inc. Integrated laser-amplifier with steerable beam
US5228049A (en) * 1991-08-27 1993-07-13 Xerox Corporation Beam control in integrated diode laser and power amplifier
US5321718A (en) * 1993-01-28 1994-06-14 Sdl, Inc. Frequency converted laser diode and lens system therefor
US6075801A (en) * 1995-01-18 2000-06-13 Nec Corporation Semiconductor laser with wide side of tapered light gain region
US6014396A (en) * 1997-09-05 2000-01-11 Sdl, Inc. Flared semiconductor optoelectronic device
JP3266194B2 (ja) * 1999-02-18 2002-03-18 日本電気株式会社 光導波路並びにその光導波路を用いたレーザ発振器およびレーザ増幅器
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
US7027475B1 (en) * 2000-04-11 2006-04-11 Nuvonyx, Inc. Tailored index single mode optical amplifiers and devices and systems including same
JP3991615B2 (ja) * 2001-04-24 2007-10-17 日本電気株式会社 半導体光アンプおよび半導体レーザ
FR2829306B1 (fr) * 2001-09-05 2003-12-19 Cit Alcatel Composant optique semiconducteur et procede de fabrication d'un tel composant
US7139299B2 (en) * 2002-03-04 2006-11-21 Quintessence Photonics Corporation De-tuned distributed feedback laser diode
JP3887744B2 (ja) 2002-03-06 2007-02-28 富士通株式会社 半導体光素子
US6836499B2 (en) * 2002-05-24 2004-12-28 Lucent Technologies Inc. Optical amplifier for quantum cascade laser
US7366220B2 (en) * 2005-03-17 2008-04-29 Fujitsu Limited Tunable laser
JP4579033B2 (ja) * 2005-03-31 2010-11-10 富士通株式会社 光半導体装置とその駆動方法
US7184207B1 (en) * 2005-09-27 2007-02-27 Bookham Technology Plc Semiconductor optical device
JP4652995B2 (ja) * 2006-03-16 2011-03-16 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュール
JP2010219227A (ja) * 2009-03-16 2010-09-30 Nec Corp 波長可変レーザとその製造方法
JP2010263153A (ja) * 2009-05-11 2010-11-18 Sumitomo Electric Ind Ltd 半導体集積光デバイス及びその作製方法
JP4444368B1 (ja) 2009-07-30 2010-03-31 古河電気工業株式会社 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09288287A (ja) * 1996-04-23 1997-11-04 Hitachi Ltd 半導体光増幅素子
JPH10308556A (ja) * 1997-05-02 1998-11-17 Nec Corp 半導体光素子およびその製造方法
JPH1174604A (ja) * 1997-08-29 1999-03-16 Furukawa Electric Co Ltd:The 半導体導波路型光素子
JP2003014963A (ja) * 2001-06-27 2003-01-15 Nec Corp 半導体光集積素子とその製造方法並びに光通信用モジュール
WO2003077383A1 (fr) * 2002-03-13 2003-09-18 Nikon Corporation Dispositif d'amplification lumineuse, son procede de fabrication, source de lumiere mettant ce dispositif en application, dispositif de traitement lumineux utilisant la source de lumiere et dispositif d'exposition utilisant cette source de lumiere
JP2007194340A (ja) * 2006-01-18 2007-08-02 Fujitsu Ltd 光半導体素子及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8548024B2 (en) 2011-02-15 2013-10-01 Furukawa Electric Co., Ltd. Semiconductor laser module
JP2020112400A (ja) * 2019-01-10 2020-07-27 株式会社デンソー 距離測定装置及びそのｓｎ比を改善する方法
JP7127548B2 (ja) 2019-01-10 2022-08-30 株式会社デンソー 距離測定装置及びそのｓｎ比を改善する方法

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Publication number Publication date
US20120128375A1 (en) 2012-05-24
JP2011035060A (ja) 2011-02-17
WO2011013480A1 (ja) 2011-02-03
US8457169B2 (en) 2013-06-04
CN102474069A (zh) 2012-05-23
CN102474069B (zh) 2014-03-26
EP2461434A4 (de) 2017-11-15
EP2461434A1 (de) 2012-06-06

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