JP4439794B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4439794B2
JP4439794B2 JP2002264226A JP2002264226A JP4439794B2 JP 4439794 B2 JP4439794 B2 JP 4439794B2 JP 2002264226 A JP2002264226 A JP 2002264226A JP 2002264226 A JP2002264226 A JP 2002264226A JP 4439794 B2 JP4439794 B2 JP 4439794B2
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Japan
Prior art keywords
laser
substrate
film
thin film
film transistor
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Expired - Fee Related
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JP2002264226A
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English (en)
Japanese (ja)
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JP2003158086A5 (enExample
JP2003158086A (ja
Inventor
幸一郎 田中
智昭 森若
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2002264226A priority Critical patent/JP4439794B2/ja
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Publication of JP2003158086A5 publication Critical patent/JP2003158086A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002264226A 2001-09-10 2002-09-10 半導体装置の作製方法 Expired - Fee Related JP4439794B2 (ja)

Priority Applications (1)

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JP2002264226A JP4439794B2 (ja) 2001-09-10 2002-09-10 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001-273482 2001-09-10
JP2001273482 2001-09-10
JP2001273770 2001-09-10
JP2001-273770 2001-09-10
JP2002264226A JP4439794B2 (ja) 2001-09-10 2002-09-10 半導体装置の作製方法

Publications (3)

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JP2003158086A JP2003158086A (ja) 2003-05-30
JP2003158086A5 JP2003158086A5 (enExample) 2005-10-27
JP4439794B2 true JP4439794B2 (ja) 2010-03-24

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JP2002264226A Expired - Fee Related JP4439794B2 (ja) 2001-09-10 2002-09-10 半導体装置の作製方法

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
JP2006134986A (ja) * 2004-11-04 2006-05-25 Sony Corp レーザ処理装置
JP5019739B2 (ja) * 2004-11-29 2012-09-05 株式会社半導体エネルギー研究所 レーザ処理装置
US7393764B2 (en) 2004-11-29 2008-07-01 Semiconductor Energy Laboratory Co., Ltd. Laser treatment apparatus, laser treatment method, and manufacturing method of semiconductor device
JP5210574B2 (ja) * 2006-09-14 2013-06-12 株式会社半導体エネルギー研究所 レーザ照射装置
KR101777289B1 (ko) 2010-11-05 2017-09-12 삼성디스플레이 주식회사 연속측면고상화(Ｓｅｑｕｅｎｔｉａｌ Ｌａｔｅｒａｌ Ｓｏｌｉｄｉｆｉｃａｔｉｏｎ:ＳＬＳ)를 이용한 결정화 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220681A (ja) * 1988-07-05 1990-01-24 Fujitsu Ltd レーザビームの集束方法
JPH04256382A (ja) * 1991-02-08 1992-09-11 Matsushita Electric Ind Co Ltd レーザ加工装置
JP3027654B2 (ja) * 1992-08-10 2000-04-04 新日本製鐵株式会社 鋼板へのレーザマーキング方法
JPH0667119A (ja) * 1992-08-24 1994-03-11 Tokin Corp 光アイソレータの作製方法
JP3429129B2 (ja) * 1996-04-26 2003-07-22 三菱電機株式会社 低温ポリシリコン薄膜トランジスタのレーザアニーリング方法
JP2000243968A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000243969A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
JP4954359B2 (ja) * 1999-02-12 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4731655B2 (ja) * 1999-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3627096B2 (ja) * 1999-12-28 2005-03-09 三菱電機株式会社 レーザ加工機

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