JP4438385B2 - 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス - Google Patents

絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス Download PDF

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JP4438385B2
JP4438385B2 JP2003383517A JP2003383517A JP4438385B2 JP 4438385 B2 JP4438385 B2 JP 4438385B2 JP 2003383517 A JP2003383517 A JP 2003383517A JP 2003383517 A JP2003383517 A JP 2003383517A JP 4438385 B2 JP4438385 B2 JP 4438385B2
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butyl
atom
formula
general formula
insulating film
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JP2005051192A5 (enExample
JP2005051192A (ja
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大治 原
圭介 吉田
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Tosoh Corp
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Tosoh Corp
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003383517A 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス Expired - Lifetime JP4438385B2 (ja)

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JP2003383517A JP4438385B2 (ja) 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス

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JP2002346226 2002-11-28
JP2003198654 2003-07-17
JP2003383517A JP4438385B2 (ja) 2002-11-28 2003-11-13 絶縁膜用材料、有機シラン化合物の製造方法、絶縁膜、及びそれを用いた半導体デバイス

Related Child Applications (1)

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JP2009120571A Division JP5003722B2 (ja) 2002-11-28 2009-05-19 有機シロキサン化合物

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JP2005051192A JP2005051192A (ja) 2005-02-24
JP2005051192A5 JP2005051192A5 (enExample) 2006-08-10
JP4438385B2 true JP4438385B2 (ja) 2010-03-24

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Families Citing this family (30)

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Publication number Priority date Publication date Assignee Title
WO2005053009A1 (ja) * 2003-11-28 2005-06-09 Nec Corporation 多孔質絶縁膜及びその製造方法並びに多孔質絶縁膜を用いた半導体装置
CN100446193C (zh) 2004-02-13 2008-12-24 松下电器产业株式会社 有机无机混合绝缘膜的形成方法
JP2006024670A (ja) 2004-07-07 2006-01-26 Sony Corp 半導体装置の製造方法
TW200730660A (en) * 2005-04-08 2007-08-16 Taiyo Nippon Sanso Corp Materials for an insulation film and a method for forming a film using the same
US8715791B2 (en) 2005-09-13 2014-05-06 Renesas Electronics Corporation Method for forming porous insulating film and semiconductor device
WO2007032563A1 (ja) 2005-09-16 2007-03-22 Nec Corporation 配線構造並びに半導体装置及びその製造方法
JP4618086B2 (ja) * 2005-09-30 2011-01-26 東ソー株式会社 Ｓｉ含有膜及びその製造方法等
WO2007061134A1 (ja) * 2005-11-24 2007-05-31 Nec Corporation 多孔質絶縁膜の形成方法、半導体装置の製造装置、半導体装置の製造方法及び半導体装置
JP2007221039A (ja) * 2006-02-20 2007-08-30 National Institute For Materials Science 絶縁膜および絶縁膜材料
US7531458B2 (en) * 2006-07-31 2009-05-12 Rohm And Haas Electronics Materials Llp Organometallic compounds
JPWO2008020592A1 (ja) 2006-08-15 2010-01-07 Jsr株式会社 膜形成用材料、ならびにケイ素含有絶縁膜およびその形成方法
WO2008029956A1 (fr) * 2006-09-08 2008-03-13 National Institute Of Advanced Industrial Science And Technology Dispositif de circuit intégré semiconducteur et procédé de formation de câble
US20090278178A1 (en) * 2006-12-12 2009-11-12 Nec Corporation Semiconductor device and method for fabricating the same
WO2008099811A1 (ja) 2007-02-14 2008-08-21 Jsr Corporation ケイ素含有膜形成用材料、ならびにケイ素含有絶縁膜およびその形成方法
JP2008274365A (ja) * 2007-05-01 2008-11-13 Shin Etsu Chem Co Ltd Ｓｉ含有膜形成材料、Ｓｉ含有膜及びその製造方法、並びに半導体デバイス
JP5015705B2 (ja) 2007-09-18 2012-08-29 ルネサスエレクトロニクス株式会社 層間絶縁膜形成方法、層間絶縁膜、半導体デバイス、および半導体製造装置
WO2009119583A1 (ja) * 2008-03-26 2009-10-01 Jsr株式会社 化学気相成長法用材料ならびにケイ素含有絶縁膜およびその製造方法
JP2009277686A (ja) * 2008-05-12 2009-11-26 Taiyo Nippon Sanso Corp 絶縁膜の成膜方法および絶縁膜
EP2358344A2 (en) * 2008-12-18 2011-08-24 Momentive Performance Materials Inc. Composition comprising at least two different cycloalkylmethicones and use thereof
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP2011111635A (ja) * 2009-11-24 2011-06-09 Tosoh Corp 炭素含有酸化ケイ素膜からなる封止膜、及びその用途
JP6014971B2 (ja) 2010-06-18 2016-10-26 東ソー株式会社 典型金属含有ポリシロキサン組成物、その製造方法、およびその用途
JP5838744B2 (ja) * 2010-12-15 2016-01-06 東ソー株式会社 炭素含有酸化ケイ素膜、封止膜及びその用途
JP2011116758A (ja) * 2010-12-22 2011-06-16 Tosoh Corp 有機シラン化合物、その製法、それを含むＳｉ含有膜形成材料、および成膜方法
JP6007662B2 (ja) 2011-09-05 2016-10-12 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
JP6131575B2 (ja) * 2011-12-22 2017-05-24 東ソー株式会社 環状シロキサン化合物の製造方法およびジシロキサン化合物
CN104471778A (zh) * 2012-07-17 2015-03-25 丰田自动车株式会社 锂二次电池及其制造方法
JP2015155521A (ja) * 2014-01-14 2015-08-27 東ソー株式会社 環状シロキサン組成物、その製造方法、及びその用途
JP6862049B2 (ja) * 2017-03-31 2021-04-21 東ソー株式会社 環状シロキサン化合物、その製造方法、それを用いてなる電気絶縁膜の製造法及び膜
CN117355632A (zh) * 2021-05-31 2024-01-05 东曹株式会社 平坦化膜的制造方法、平坦化膜用材料以及平坦化膜

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