TW200730660A - Materials for an insulation film and a method for forming a film using the same - Google Patents

Materials for an insulation film and a method for forming a film using the same

Info

Publication number
TW200730660A
TW200730660A TW095112123A TW95112123A TW200730660A TW 200730660 A TW200730660 A TW 200730660A TW 095112123 A TW095112123 A TW 095112123A TW 95112123 A TW95112123 A TW 95112123A TW 200730660 A TW200730660 A TW 200730660A
Authority
TW
Taiwan
Prior art keywords
insulation film
materials
film
present
forming
Prior art date
Application number
TW095112123A
Other languages
Chinese (zh)
Inventor
Takahisa Ohno
Nobuo Tajima
Tomoyuki Hamada
Nobuyoshi Kobayashi
Katsumi Yoneda
Minoru Inoue
Satoshi Hasaka
Yoshiaki Sugimori
Kazuhiro Miyazawa
Original Assignee
Taiyo Nippon Sanso Corp
Nat Inst For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Nippon Sanso Corp, Nat Inst For Materials Science filed Critical Taiyo Nippon Sanso Corp
Publication of TW200730660A publication Critical patent/TW200730660A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention aims to provide an insulation film with a low dielectric constant and a high mechanical strength, which is useful as an interlayer insulation film in semiconductor devices etc. Materials for an insulation film of the present invention can be cyclotetrasiloxanes, disiloxane monosilanes, monosilanes, dihydroxysilanes, trisilabenzenes, and trisilacyclohexanes. It is preferred that organic materials having the same functional groups as in the materials for an insulation film are present during the plasma CVD reaction.
TW095112123A 2005-04-08 2006-04-06 Materials for an insulation film and a method for forming a film using the same TW200730660A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005111930 2005-04-08
JP2005111929 2005-04-08

Publications (1)

Publication Number Publication Date
TW200730660A true TW200730660A (en) 2007-08-16

Family

ID=37086961

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112123A TW200730660A (en) 2005-04-08 2006-04-06 Materials for an insulation film and a method for forming a film using the same

Country Status (3)

Country Link
JP (1) JP4997435B2 (en)
TW (1) TW200730660A (en)
WO (1) WO2006109686A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5040162B2 (en) * 2006-04-27 2012-10-03 東ソー株式会社 Si-containing film forming material comprising alkenyl group-containing organosilane compound and use thereof
JP5332442B2 (en) * 2008-09-19 2013-11-06 富士通セミコンダクター株式会社 Semiconductor device manufacturing method and semiconductor device
CN115992345A (en) * 2017-09-14 2023-04-21 弗萨姆材料美国有限责任公司 Composition and method for depositing silicon-containing films
CN114335723B (en) * 2021-12-27 2022-09-06 珠海市赛纬电子材料股份有限公司 Additive, and non-aqueous electrolyte and lithium ion battery containing additive

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3226479B2 (en) * 1996-08-29 2001-11-05 松下電器産業株式会社 Method of forming interlayer insulating film
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
EP1504138A2 (en) * 2002-05-08 2005-02-09 Applied Materials, Inc. Method for using low dielectric constant film by electron beam
JP4217870B2 (en) * 2002-07-15 2009-02-04 日本電気株式会社 Organosiloxane copolymer film, manufacturing method thereof, growth apparatus, and semiconductor device using the copolymer film
JP4438385B2 (en) * 2002-11-28 2010-03-24 東ソー株式会社 Insulating film material, organosilane compound manufacturing method, insulating film, and semiconductor device using the same

Also Published As

Publication number Publication date
JP4997435B2 (en) 2012-08-08
WO2006109686A1 (en) 2006-10-19
JPWO2006109686A1 (en) 2008-11-13

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