JP4430918B2 - 薄膜形成装置の洗浄方法及び薄膜形成方法 - Google Patents

薄膜形成装置の洗浄方法及び薄膜形成方法 Download PDF

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JP4430918B2
JP4430918B2 JP2003371322A JP2003371322A JP4430918B2 JP 4430918 B2 JP4430918 B2 JP 4430918B2 JP 2003371322 A JP2003371322 A JP 2003371322A JP 2003371322 A JP2003371322 A JP 2003371322A JP 4430918 B2 JP4430918 B2 JP 4430918B2
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gas
film forming
reaction tube
thin film
nitrogen
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Japanese (ja)
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JP2004311929A (ja
Inventor
一秀 長谷部
充弘 岡田
貴司 千葉
淳 小川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2003371322A priority Critical patent/JP4430918B2/ja
Priority to TW093107967A priority patent/TW200501241A/zh
Priority to PCT/JP2004/004205 priority patent/WO2004086482A1/ja
Priority to US10/549,851 priority patent/US20060213539A1/en
Priority to KR1020047018897A priority patent/KR100779823B1/ko
Publication of JP2004311929A publication Critical patent/JP2004311929A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • H10P14/60—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003371322A 2003-03-25 2003-10-30 薄膜形成装置の洗浄方法及び薄膜形成方法 Expired - Fee Related JP4430918B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003371322A JP4430918B2 (ja) 2003-03-25 2003-10-30 薄膜形成装置の洗浄方法及び薄膜形成方法
TW093107967A TW200501241A (en) 2003-03-25 2004-03-24 Method for cleaning thin-film forming apparatus
PCT/JP2004/004205 WO2004086482A1 (ja) 2003-03-25 2004-03-25 薄膜形成装置の洗浄方法
US10/549,851 US20060213539A1 (en) 2003-03-25 2004-03-25 Method for cleaning thin-film forming apparatus
KR1020047018897A KR100779823B1 (ko) 2003-03-25 2004-03-25 박막 형성 장치, 박막 형성 방법 및 박막 형성 장치의 세정 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003083527 2003-03-25
JP2003371322A JP4430918B2 (ja) 2003-03-25 2003-10-30 薄膜形成装置の洗浄方法及び薄膜形成方法

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JP2009266448A Division JP5197554B2 (ja) 2003-03-25 2009-11-24 薄膜形成装置の洗浄方法及び薄膜形成方法

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JP2004311929A JP2004311929A (ja) 2004-11-04
JP4430918B2 true JP4430918B2 (ja) 2010-03-10

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US (1) US20060213539A1 (enExample)
JP (1) JP4430918B2 (enExample)
KR (1) KR100779823B1 (enExample)
TW (1) TW200501241A (enExample)
WO (1) WO2004086482A1 (enExample)

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JP4541864B2 (ja) * 2004-12-14 2010-09-08 東京エレクトロン株式会社 シリコン酸窒化膜の形成方法、形成装置及びプログラム
TWI365919B (en) * 2004-12-28 2012-06-11 Tokyo Electron Ltd Film formation apparatus and method of using the same
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JP4844261B2 (ja) * 2006-06-29 2011-12-28 東京エレクトロン株式会社 成膜方法及び成膜装置並びに記憶媒体
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
JP4990594B2 (ja) * 2006-10-12 2012-08-01 東京エレクトロン株式会社 ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP5008957B2 (ja) * 2006-11-30 2012-08-22 東京エレクトロン株式会社 シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム
US20080142046A1 (en) * 2006-12-13 2008-06-19 Andrew David Johnson Thermal F2 etch process for cleaning CVD chambers
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JP5554469B2 (ja) * 2007-05-14 2014-07-23 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP2008283148A (ja) * 2007-05-14 2008-11-20 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
US20100186774A1 (en) * 2007-09-19 2010-07-29 Hironobu Miya Cleaning method and substrate processing apparatus
JP4918453B2 (ja) * 2007-10-11 2012-04-18 東京エレクトロン株式会社 ガス供給装置及び薄膜形成装置
JP5113705B2 (ja) * 2007-10-16 2013-01-09 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP4531833B2 (ja) * 2007-12-05 2010-08-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びクリーニング方法
JP5044579B2 (ja) * 2009-01-27 2012-10-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
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KR20120090996A (ko) * 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
JP5571233B2 (ja) * 2013-06-19 2014-08-13 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
KR101516587B1 (ko) * 2014-01-27 2015-05-04 주식회사 엘지실트론 웨이퍼용 열처리 노 세정 방법
JP2015192063A (ja) * 2014-03-28 2015-11-02 東京エレクトロン株式会社 アモルファスシリコン膜形成装置の洗浄方法、アモルファスシリコン膜の形成方法およびアモルファスシリコン膜形成装置
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CN109585267B (zh) * 2017-09-29 2023-12-01 住友电气工业株式会社 氮化硅膜的形成方法
JP6956660B2 (ja) * 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
CN109608056A (zh) * 2018-11-06 2019-04-12 中国神华能源股份有限公司 一种玻璃制油样瓶的净化方法
CN111344852B (zh) * 2020-02-10 2021-08-31 长江存储科技有限责任公司 金属污染测试装置和方法
JP7189914B2 (ja) 2020-08-31 2022-12-14 株式会社Kokusai Electric クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
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Publication number Publication date
US20060213539A1 (en) 2006-09-28
JP2004311929A (ja) 2004-11-04
TWI336492B (enExample) 2011-01-21
KR20050109046A (ko) 2005-11-17
WO2004086482A1 (ja) 2004-10-07
KR100779823B1 (ko) 2007-11-28
TW200501241A (en) 2005-01-01

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