TW200501241A - Method for cleaning thin-film forming apparatus - Google Patents
Method for cleaning thin-film forming apparatusInfo
- Publication number
- TW200501241A TW200501241A TW093107967A TW93107967A TW200501241A TW 200501241 A TW200501241 A TW 200501241A TW 093107967 A TW093107967 A TW 093107967A TW 93107967 A TW93107967 A TW 93107967A TW 200501241 A TW200501241 A TW 200501241A
- Authority
- TW
- Taiwan
- Prior art keywords
- forming apparatus
- film forming
- reaction chamber
- cleaning
- thin
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004140 cleaning Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 238000010926 purge Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- 238000005121 nitriding Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003083527 | 2003-03-25 | ||
JP2003371322A JP4430918B2 (ja) | 2003-03-25 | 2003-10-30 | 薄膜形成装置の洗浄方法及び薄膜形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200501241A true TW200501241A (en) | 2005-01-01 |
TWI336492B TWI336492B (zh) | 2011-01-21 |
Family
ID=33100377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093107967A TW200501241A (en) | 2003-03-25 | 2004-03-24 | Method for cleaning thin-film forming apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060213539A1 (zh) |
JP (1) | JP4430918B2 (zh) |
KR (1) | KR100779823B1 (zh) |
TW (1) | TW200501241A (zh) |
WO (1) | WO2004086482A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460791B (zh) * | 2007-12-05 | 2014-11-11 | Hitachi Int Electric Inc | A manufacturing method of a semiconductor device, a substrate processing device, and a method of using the same |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4272486B2 (ja) * | 2003-08-29 | 2009-06-03 | 東京エレクトロン株式会社 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
JP4541864B2 (ja) | 2004-12-14 | 2010-09-08 | 東京エレクトロン株式会社 | シリコン酸窒化膜の形成方法、形成装置及びプログラム |
TWI365919B (en) * | 2004-12-28 | 2012-06-11 | Tokyo Electron Ltd | Film formation apparatus and method of using the same |
WO2007026762A1 (ja) | 2005-08-31 | 2007-03-08 | Tokyo Electron Limited | クリーニング方法 |
JP4844261B2 (ja) * | 2006-06-29 | 2011-12-28 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置並びに記憶媒体 |
JP4245012B2 (ja) * | 2006-07-13 | 2009-03-25 | 東京エレクトロン株式会社 | 処理装置及びこのクリーニング方法 |
JP4990594B2 (ja) * | 2006-10-12 | 2012-08-01 | 東京エレクトロン株式会社 | ガス供給装置、ガス供給方法、薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
JP5008957B2 (ja) * | 2006-11-30 | 2012-08-22 | 東京エレクトロン株式会社 | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム |
US20080142046A1 (en) * | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
JP5554469B2 (ja) * | 2007-05-14 | 2014-07-23 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
US8080109B2 (en) * | 2007-05-14 | 2011-12-20 | Tokyo Electron Limited | Film formation apparatus and method for using the same |
JP2008283148A (ja) * | 2007-05-14 | 2008-11-20 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
KR20100071961A (ko) * | 2007-09-19 | 2010-06-29 | 가부시키가이샤 히다치 고쿠사이 덴키 | 클리닝 방법 및 기판 처리 장치 |
JP4918453B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | ガス供給装置及び薄膜形成装置 |
JP5113705B2 (ja) * | 2007-10-16 | 2013-01-09 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
JP5044579B2 (ja) * | 2009-01-27 | 2012-10-10 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
WO2011001394A2 (en) * | 2009-07-02 | 2011-01-06 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of removing residual fluorine from deposition chamber |
US20110117728A1 (en) * | 2009-08-27 | 2011-05-19 | Applied Materials, Inc. | Method of decontamination of process chamber after in-situ chamber clean |
JP5571233B2 (ja) * | 2013-06-19 | 2014-08-13 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
KR101516587B1 (ko) * | 2014-01-27 | 2015-05-04 | 주식회사 엘지실트론 | 웨이퍼용 열처리 노 세정 방법 |
JP2015192063A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | アモルファスシリコン膜形成装置の洗浄方法、アモルファスシリコン膜の形成方法およびアモルファスシリコン膜形成装置 |
WO2018026509A1 (en) * | 2016-08-05 | 2018-02-08 | Applied Materials, Inc. | Aluminum fluoride mitigation by plasma treatment |
CN109585267B (zh) * | 2017-09-29 | 2023-12-01 | 住友电气工业株式会社 | 氮化硅膜的形成方法 |
JP6956660B2 (ja) * | 2018-03-19 | 2021-11-02 | 東京エレクトロン株式会社 | クリーニング方法及び成膜装置 |
JP6860537B2 (ja) * | 2018-09-25 | 2021-04-14 | 株式会社Kokusai Electric | クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム |
CN109608056A (zh) * | 2018-11-06 | 2019-04-12 | 中国神华能源股份有限公司 | 一种玻璃制油样瓶的净化方法 |
WO2021159225A1 (en) * | 2020-02-10 | 2021-08-19 | Yangtze Memory Technologies Co., Ltd. | Metal contamination test apparatus and method |
JP7189914B2 (ja) | 2020-08-31 | 2022-12-14 | 株式会社Kokusai Electric | クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2314260A1 (de) * | 1972-05-30 | 1973-12-13 | Ibm | Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung |
JP2708533B2 (ja) * | 1989-03-14 | 1998-02-04 | 富士通株式会社 | Cvd装置の残留ガス除去方法 |
JPH03130368A (ja) * | 1989-09-22 | 1991-06-04 | Applied Materials Inc | 半導体ウェーハプロセス装置の洗浄方法 |
JP3150408B2 (ja) * | 1992-03-16 | 2001-03-26 | 株式会社東芝 | Cvd装置のプラズマ・クリーニング後処理方法 |
JP3593363B2 (ja) * | 1994-08-10 | 2004-11-24 | 株式会社東芝 | 半導体薄膜を具備するアクティブマトリックス型液晶表示装置の製造方法 |
US6444037B1 (en) * | 1996-11-13 | 2002-09-03 | Applied Materials, Inc. | Chamber liner for high temperature processing chamber |
JP3476638B2 (ja) * | 1996-12-20 | 2003-12-10 | 東京エレクトロン株式会社 | Cvd成膜方法 |
US6095158A (en) * | 1997-02-06 | 2000-08-01 | Lam Research Corporation | Anhydrous HF in-situ cleaning process of semiconductor processing chambers |
TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
JPH1187248A (ja) * | 1997-09-02 | 1999-03-30 | Sharp Corp | プラズマクリーニング装置 |
JP3132489B2 (ja) * | 1998-11-05 | 2001-02-05 | 日本電気株式会社 | 化学的気相成長装置及び薄膜成膜方法 |
JP4459329B2 (ja) * | 1999-08-05 | 2010-04-28 | キヤノンアネルバ株式会社 | 付着膜の除去方法及び除去装置 |
JP4346741B2 (ja) * | 1999-08-05 | 2009-10-21 | キヤノンアネルバ株式会社 | 発熱体cvd装置及び付着膜の除去方法 |
US20030010354A1 (en) * | 2000-03-27 | 2003-01-16 | Applied Materials, Inc. | Fluorine process for cleaning semiconductor process chamber |
US6468903B2 (en) * | 2000-11-15 | 2002-10-22 | Asm International N.V. | Pre-treatment of reactor parts for chemical vapor deposition reactors |
JP2002158218A (ja) * | 2000-11-21 | 2002-05-31 | Toshiba Corp | 成膜方法 |
US20020102859A1 (en) * | 2001-01-31 | 2002-08-01 | Yoo Woo Sik | Method for ultra thin film formation |
US6844273B2 (en) * | 2001-02-07 | 2005-01-18 | Tokyo Electron Limited | Precleaning method of precleaning a silicon nitride film forming system |
JP3421329B2 (ja) * | 2001-06-08 | 2003-06-30 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法 |
US6872323B1 (en) * | 2001-11-01 | 2005-03-29 | Novellus Systems, Inc. | In situ plasma process to remove fluorine residues from the interior surfaces of a CVD reactor |
-
2003
- 2003-10-30 JP JP2003371322A patent/JP4430918B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-24 TW TW093107967A patent/TW200501241A/zh not_active IP Right Cessation
- 2004-03-25 WO PCT/JP2004/004205 patent/WO2004086482A1/ja active Application Filing
- 2004-03-25 KR KR1020047018897A patent/KR100779823B1/ko active IP Right Grant
- 2004-03-25 US US10/549,851 patent/US20060213539A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460791B (zh) * | 2007-12-05 | 2014-11-11 | Hitachi Int Electric Inc | A manufacturing method of a semiconductor device, a substrate processing device, and a method of using the same |
Also Published As
Publication number | Publication date |
---|---|
JP2004311929A (ja) | 2004-11-04 |
KR100779823B1 (ko) | 2007-11-28 |
JP4430918B2 (ja) | 2010-03-10 |
TWI336492B (zh) | 2011-01-21 |
US20060213539A1 (en) | 2006-09-28 |
WO2004086482A1 (ja) | 2004-10-07 |
KR20050109046A (ko) | 2005-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200501241A (en) | Method for cleaning thin-film forming apparatus | |
TW200604390A (en) | Film formation apparatus and method of cleaning such a film formation apparatus | |
TW200606276A (en) | Vacuum film-forming apparatus | |
TW200636086A (en) | Film formation apparatus and method of using the same | |
TW200629389A (en) | Method for treating a substrate | |
TW200618112A (en) | Semiconductor device manufacturing method and plasma oxidation treatment method | |
TW200500485A (en) | CVD method and apparatus for forming silicon nitride film | |
EP1265276A4 (en) | METHOD FOR FORMING DIELECTRIC FILM | |
TW200717611A (en) | Film formation method and apparatus for semiconductor process | |
EP1475457A8 (en) | Metal barrier film production apparatus, metal barrier film production method, metal film production method, and metal film production apparatus | |
WO2008146805A1 (ja) | プラズマ窒化処理におけるチャンバ内の前処理方法、プラズマ処理方法、およびプラズマ処理装置 | |
WO2005104215A3 (en) | Method and system for adjusting a chemical oxide removal process using partial pressure | |
WO2005104186A3 (en) | Method and processing system for plasma-enhanced cleaning of system components | |
TW200705551A (en) | Method for forming a high density dielectric film by chemical vapor deposition | |
TW200625443A (en) | Film formation apparatus and method for semiconductor process | |
WO2006060827A3 (en) | Methods and apparatus for downstream dissociation of gases | |
SG152910A1 (en) | Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method | |
WO2004066365A3 (en) | Cleaning of cvd chambers using remote source with cxfyoz based chemistry | |
WO2004082820A3 (en) | Processing system and method for chemically treating a substrate | |
TW200517524A (en) | Processing apparatus and method | |
TW200701344A (en) | Film formation method and apparatus for semiconductor process | |
TW200614372A (en) | Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film and base material | |
TW200501254A (en) | Method for removing silicon oxide film and processing apparatus | |
WO2009155446A3 (en) | Ion source cleaning method and apparatus | |
EP1447459A3 (en) | A method and system for producing thin films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |