JP4424659B2 - 窒化アルミニウム質材料および半導体製造装置用部材 - Google Patents

窒化アルミニウム質材料および半導体製造装置用部材 Download PDF

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JP4424659B2
JP4424659B2 JP2004033892A JP2004033892A JP4424659B2 JP 4424659 B2 JP4424659 B2 JP 4424659B2 JP 2004033892 A JP2004033892 A JP 2004033892A JP 2004033892 A JP2004033892 A JP 2004033892A JP 4424659 B2 JP4424659 B2 JP 4424659B2
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phase
oxide
aluminum
aluminum nitride
europium
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JP2004033892A
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Japanese (ja)
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JP2004262750A (ja
JP2004262750A5 (enExample
Inventor
義政 小林
徹 早瀬
直美 寺谷
潤 ▲よし▼川
直仁 山田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Priority to TW093103609A priority Critical patent/TWI262534B/zh
Priority to US10/785,774 priority patent/US7122490B2/en
Priority to DE602004030843T priority patent/DE602004030843D1/de
Priority to EP04251025A priority patent/EP1452510B1/en
Priority to KR1020040013034A priority patent/KR100609307B1/ko
Publication of JP2004262750A publication Critical patent/JP2004262750A/ja
Publication of JP2004262750A5 publication Critical patent/JP2004262750A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2004033892A 2003-02-28 2004-02-10 窒化アルミニウム質材料および半導体製造装置用部材 Expired - Fee Related JP4424659B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
TW093103609A TWI262534B (en) 2003-02-28 2004-02-16 Aluminum nitride materials and members for use in the production of semiconductors
US10/785,774 US7122490B2 (en) 2003-02-28 2004-02-24 Aluminum nitride materials and members for use in the production of semiconductors
DE602004030843T DE602004030843D1 (de) 2003-02-28 2004-02-25 Aluminiumnitridwerkstoffe und Teile für die Halbleiterherstellung
EP04251025A EP1452510B1 (en) 2003-02-28 2004-02-25 Aluminium nitride materials and members for use in the production of semiconductors
KR1020040013034A KR100609307B1 (ko) 2003-02-28 2004-02-26 질화알루미늄질 재료 및 반도체 제조 장치용 부재

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45110503P 2003-02-28 2003-02-28

Publications (3)

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JP2004262750A JP2004262750A (ja) 2004-09-24
JP2004262750A5 JP2004262750A5 (enExample) 2006-09-14
JP4424659B2 true JP4424659B2 (ja) 2010-03-03

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US (1) US7122490B2 (enExample)
JP (1) JP4424659B2 (enExample)
DE (1) DE602004030843D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102270157B1 (ko) * 2020-12-24 2021-06-29 한국씰마스타주식회사 산질화알루미늄 세라믹 히터 및 그 제조 방법

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1390298B1 (en) * 2001-05-23 2007-10-17 Ecaps Sintering resistant catalyst material and a method for the preparation thereof
JP3829935B2 (ja) * 2002-12-27 2006-10-04 信越化学工業株式会社 高耐電圧性部材
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
JP5036339B2 (ja) * 2007-02-07 2012-09-26 日本碍子株式会社 静電チャック及びその製造方法
JP5188085B2 (ja) * 2007-03-27 2013-04-24 日本碍子株式会社 窒化アルミニウム耐食性部材及び半導体製造装置用部材
JP5121268B2 (ja) * 2007-03-27 2013-01-16 日本碍子株式会社 窒化アルミニウム焼結体及び半導体製造装置用部材
KR101428833B1 (ko) * 2007-04-04 2014-08-08 오츠카 가가쿠 가부시키가이샤 티탄산칼륨, 그의 제조 방법, 마찰재 및 수지 조성물
JP5307671B2 (ja) * 2008-10-23 2013-10-02 日本碍子株式会社 窒化アルミニウム基複合材料、その製造方法及び半導体製造装置用部材
JP5180034B2 (ja) * 2008-11-21 2013-04-10 日本碍子株式会社 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP5225043B2 (ja) * 2008-11-26 2013-07-03 京セラ株式会社 静電チャック
JP5406565B2 (ja) * 2009-03-06 2014-02-05 日本碍子株式会社 酸化アルミニウム焼結体、その製法及び半導体製造装置部材
JP5345583B2 (ja) * 2009-04-07 2013-11-20 日本碍子株式会社 静電チャック
WO2012056807A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材
WO2012056808A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、半導体製造装置用部材、スパッタリングターゲット部材及びセラミックス材料の製造方法
WO2015056702A1 (ja) * 2013-10-15 2015-04-23 住友大阪セメント株式会社 耐食性部材、静電チャック装置
KR101769608B1 (ko) 2016-10-05 2017-08-21 주식회사 케이에스엠컴포넌트 정전척의 제조 방법
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
KR101797232B1 (ko) * 2017-07-10 2017-11-13 주식회사 케이에스엠컴포넌트 정전척
JP6393006B1 (ja) 2018-02-08 2018-09-19 日本碍子株式会社 半導体製造装置用ヒータ
DE112021002238T5 (de) 2020-04-09 2023-02-16 Nichia Corporation Gesinterter körper, lichtemittierende vorrichtung, wellenlängenumwandlungsbauteil, und verfahren zum herstellen des gesinterten körpers
JP7791442B2 (ja) * 2020-12-25 2025-12-24 日亜化学工業株式会社 蛍光体セラミックスおよび発光装置の製造方法

Family Cites Families (13)

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JP2666942B2 (ja) * 1988-01-19 1997-10-22 株式会社東芝 窒化アルミニウム焼結体
JP3076916B2 (ja) 1990-09-07 2000-08-14 日本特殊陶業株式会社 スパークプラグ
JP3457495B2 (ja) 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP3370532B2 (ja) 1996-11-26 2003-01-27 京セラ株式会社 静電チャック
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP4003907B2 (ja) 1998-07-08 2007-11-07 コバレントマテリアル株式会社 窒化アルミニウム焼結体からなる半導体製造装置関連製品及びその製造方法並びに静電チャック、サセプタ、ダミーウエハ、クランプリング及びパーティクルキャッチャー
JP2001064079A (ja) 1999-08-25 2001-03-13 Sumitomo Electric Ind Ltd 窒化アルミニウム焼結体及びその製造方法
US6607836B2 (en) 2000-10-23 2003-08-19 Ngk Insulators, Ltd. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
JP2002313781A (ja) 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
JP4245125B2 (ja) 2001-11-26 2009-03-25 日本碍子株式会社 窒化アルミニウム質セラミックス、半導体製造用部材、耐蝕性部材および導電性部材
JP4243943B2 (ja) 2002-04-22 2009-03-25 日本碍子株式会社 窒化アルミニウム材料および半導体製造用部材
JP4386695B2 (ja) * 2002-11-14 2009-12-16 日本碍子株式会社 窒化アルミニウム焼結体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102270157B1 (ko) * 2020-12-24 2021-06-29 한국씰마스타주식회사 산질화알루미늄 세라믹 히터 및 그 제조 방법

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US7122490B2 (en) 2006-10-17
US20040171474A1 (en) 2004-09-02
DE602004030843D1 (de) 2011-02-17
JP2004262750A (ja) 2004-09-24

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