DE602004030843D1 - Aluminiumnitridwerkstoffe und Teile für die Halbleiterherstellung - Google Patents

Aluminiumnitridwerkstoffe und Teile für die Halbleiterherstellung

Info

Publication number
DE602004030843D1
DE602004030843D1 DE602004030843T DE602004030843T DE602004030843D1 DE 602004030843 D1 DE602004030843 D1 DE 602004030843D1 DE 602004030843 T DE602004030843 T DE 602004030843T DE 602004030843 T DE602004030843 T DE 602004030843T DE 602004030843 D1 DE602004030843 D1 DE 602004030843D1
Authority
DE
Germany
Prior art keywords
parts
aluminum nitride
semiconductor manufacturing
nitride materials
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004030843T
Other languages
German (de)
English (en)
Inventor
Yoshimasa Kobayashi
Toru Hayase
Naomi Teratani
Jun Yoshikawa
Naohito Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE602004030843D1 publication Critical patent/DE602004030843D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Products (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE602004030843T 2003-02-28 2004-02-25 Aluminiumnitridwerkstoffe und Teile für die Halbleiterherstellung Expired - Lifetime DE602004030843D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45110503P 2003-02-28 2003-02-28
JP2004033892A JP4424659B2 (ja) 2003-02-28 2004-02-10 窒化アルミニウム質材料および半導体製造装置用部材

Publications (1)

Publication Number Publication Date
DE602004030843D1 true DE602004030843D1 (de) 2011-02-17

Family

ID=33131649

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004030843T Expired - Lifetime DE602004030843D1 (de) 2003-02-28 2004-02-25 Aluminiumnitridwerkstoffe und Teile für die Halbleiterherstellung

Country Status (3)

Country Link
US (1) US7122490B2 (enExample)
JP (1) JP4424659B2 (enExample)
DE (1) DE602004030843D1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1390298B1 (en) * 2001-05-23 2007-10-17 Ecaps Sintering resistant catalyst material and a method for the preparation thereof
JP3829935B2 (ja) * 2002-12-27 2006-10-04 信越化学工業株式会社 高耐電圧性部材
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
JP5036339B2 (ja) * 2007-02-07 2012-09-26 日本碍子株式会社 静電チャック及びその製造方法
JP5188085B2 (ja) * 2007-03-27 2013-04-24 日本碍子株式会社 窒化アルミニウム耐食性部材及び半導体製造装置用部材
JP5121268B2 (ja) 2007-03-27 2013-01-16 日本碍子株式会社 窒化アルミニウム焼結体及び半導体製造装置用部材
BRPI0809676B1 (pt) * 2007-04-04 2019-05-14 Otsuka Chemical Co., Ltd. Titanato de potássio, método para produção do mesmo, material de fricção e composição de resina
JP5307671B2 (ja) * 2008-10-23 2013-10-02 日本碍子株式会社 窒化アルミニウム基複合材料、その製造方法及び半導体製造装置用部材
JP5180034B2 (ja) * 2008-11-21 2013-04-10 日本碍子株式会社 窒化アルミニウム焼結体、その製法及びそれを用いた静電チャック
JP5225043B2 (ja) * 2008-11-26 2013-07-03 京セラ株式会社 静電チャック
JP5406565B2 (ja) * 2009-03-06 2014-02-05 日本碍子株式会社 酸化アルミニウム焼結体、その製法及び半導体製造装置部材
JP5345583B2 (ja) * 2009-04-07 2013-11-20 日本碍子株式会社 静電チャック
WO2012056807A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、積層体、半導体製造装置用部材及びスパッタリングターゲット部材
WO2012056808A1 (ja) * 2010-10-25 2012-05-03 日本碍子株式会社 セラミックス材料、半導体製造装置用部材、スパッタリングターゲット部材及びセラミックス材料の製造方法
JP6394396B2 (ja) * 2013-10-15 2018-09-26 住友大阪セメント株式会社 耐食性部材、静電チャック装置
KR101769608B1 (ko) 2016-10-05 2017-08-21 주식회사 케이에스엠컴포넌트 정전척의 제조 방법
KR102339550B1 (ko) * 2017-06-30 2021-12-17 주식회사 미코세라믹스 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
KR101797232B1 (ko) 2017-07-10 2017-11-13 주식회사 케이에스엠컴포넌트 정전척
US10566228B2 (en) 2018-02-08 2020-02-18 Ngk Insulators, Ltd. Heater for semiconductor manufacturing apparatus
JP6393006B1 (ja) * 2018-02-08 2018-09-19 日本碍子株式会社 半導体製造装置用ヒータ
KR102270157B1 (ko) * 2020-12-24 2021-06-29 한국씰마스타주식회사 산질화알루미늄 세라믹 히터 및 그 제조 방법
DE112021006659T5 (de) * 2020-12-25 2023-10-12 Nichia Corporation Verfahren zur herstellung von leuchtstoffkeramik und verfahren zur herstellung einer lichtemittierenden vorrichtung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2666942B2 (ja) * 1988-01-19 1997-10-22 株式会社東芝 窒化アルミニウム焼結体
JP3076916B2 (ja) 1990-09-07 2000-08-14 日本特殊陶業株式会社 スパークプラグ
JP3457495B2 (ja) 1996-03-29 2003-10-20 日本碍子株式会社 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP3370532B2 (ja) 1996-11-26 2003-01-27 京セラ株式会社 静電チャック
US5705450A (en) 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JP4003907B2 (ja) 1998-07-08 2007-11-07 コバレントマテリアル株式会社 窒化アルミニウム焼結体からなる半導体製造装置関連製品及びその製造方法並びに静電チャック、サセプタ、ダミーウエハ、クランプリング及びパーティクルキャッチャー
JP2001064079A (ja) * 1999-08-25 2001-03-13 Sumitomo Electric Ind Ltd 窒化アルミニウム焼結体及びその製造方法
US6607836B2 (en) 2000-10-23 2003-08-19 Ngk Insulators, Ltd. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors
TWI243158B (en) * 2000-12-21 2005-11-11 Ngk Insulators Ltd Aluminum nitride sintered bodies
JP2002313781A (ja) 2001-04-11 2002-10-25 Sumitomo Electric Ind Ltd 基板処理装置
JP4245125B2 (ja) 2001-11-26 2009-03-25 日本碍子株式会社 窒化アルミニウム質セラミックス、半導体製造用部材、耐蝕性部材および導電性部材
JP4243943B2 (ja) 2002-04-22 2009-03-25 日本碍子株式会社 窒化アルミニウム材料および半導体製造用部材
JP4386695B2 (ja) * 2002-11-14 2009-12-16 日本碍子株式会社 窒化アルミニウム焼結体の製造方法

Also Published As

Publication number Publication date
US7122490B2 (en) 2006-10-17
JP2004262750A (ja) 2004-09-24
US20040171474A1 (en) 2004-09-02
JP4424659B2 (ja) 2010-03-03

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