JP4424039B2 - 半導体ウェーハの製造方法 - Google Patents

半導体ウェーハの製造方法 Download PDF

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Publication number
JP4424039B2
JP4424039B2 JP2004109870A JP2004109870A JP4424039B2 JP 4424039 B2 JP4424039 B2 JP 4424039B2 JP 2004109870 A JP2004109870 A JP 2004109870A JP 2004109870 A JP2004109870 A JP 2004109870A JP 4424039 B2 JP4424039 B2 JP 4424039B2
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JP
Japan
Prior art keywords
wafer
sodium hydroxide
weight
semiconductor wafer
etchant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004109870A
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English (en)
Japanese (ja)
Other versions
JP2005294682A (ja
Inventor
栄 古屋田
和成 高石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2004109870A priority Critical patent/JP4424039B2/ja
Priority to EP05726977.1A priority patent/EP1742256B1/en
Priority to PCT/JP2005/005527 priority patent/WO2005098921A1/ja
Priority to KR1020067022989A priority patent/KR100858774B1/ko
Priority to US10/599,576 priority patent/US7851375B2/en
Priority to TW094110355A priority patent/TW200539274A/zh
Publication of JP2005294682A publication Critical patent/JP2005294682A/ja
Application granted granted Critical
Publication of JP4424039B2 publication Critical patent/JP4424039B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2004109870A 2004-04-02 2004-04-02 半導体ウェーハの製造方法 Expired - Lifetime JP4424039B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2004109870A JP4424039B2 (ja) 2004-04-02 2004-04-02 半導体ウェーハの製造方法
EP05726977.1A EP1742256B1 (en) 2004-04-02 2005-03-25 Alkaline etchant for controlling surface roughness of semiconductor wafer
PCT/JP2005/005527 WO2005098921A1 (ja) 2004-04-02 2005-03-25 半導体ウェーハの表面粗さ制御用アルカリエッチャント
KR1020067022989A KR100858774B1 (ko) 2004-04-02 2005-03-25 반도체 웨이퍼의 표면 거칠기 제어용 알칼리 에천트
US10/599,576 US7851375B2 (en) 2004-04-02 2005-03-25 Alkaline etchant for controlling surface roughness of semiconductor wafer
TW094110355A TW200539274A (en) 2004-04-02 2005-03-31 Alkaline etchant for controlling surface roughness of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004109870A JP4424039B2 (ja) 2004-04-02 2004-04-02 半導体ウェーハの製造方法

Publications (2)

Publication Number Publication Date
JP2005294682A JP2005294682A (ja) 2005-10-20
JP4424039B2 true JP4424039B2 (ja) 2010-03-03

Family

ID=35125357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004109870A Expired - Lifetime JP4424039B2 (ja) 2004-04-02 2004-04-02 半導体ウェーハの製造方法

Country Status (6)

Country Link
US (1) US7851375B2 (enExample)
EP (1) EP1742256B1 (enExample)
JP (1) JP4424039B2 (enExample)
KR (1) KR100858774B1 (enExample)
TW (1) TW200539274A (enExample)
WO (1) WO2005098921A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4517867B2 (ja) * 2005-01-31 2010-08-04 株式会社Sumco シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法
JP2008166805A (ja) * 2006-12-29 2008-07-17 Siltron Inc 高平坦度シリコンウェハーの製造方法
JP5261960B2 (ja) * 2007-04-03 2013-08-14 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP2009004675A (ja) * 2007-06-25 2009-01-08 Shin Etsu Handotai Co Ltd シリコンウエーハのエッチング方法及び装置
DE102008014166B3 (de) * 2008-03-14 2009-11-26 Rena Gmbh Verfahren zur Herstellung einer Siliziumoberfläche mit pyramidaler Textur
JP2009283616A (ja) * 2008-05-21 2009-12-03 Sumco Corp 半導体ウェーハ
JP2009289877A (ja) * 2008-05-28 2009-12-10 Sumco Corp 半導体ウェーハ
JP2009298680A (ja) * 2008-06-17 2009-12-24 Sumco Corp 半導体ウェーハ
JP5477375B2 (ja) * 2009-03-31 2014-04-23 栗田工業株式会社 エッチング液の処理装置及び処理方法
KR101024927B1 (ko) 2009-07-30 2011-03-31 노바테크인더스트리 주식회사 에칭 공정에서의 세정 방법
WO2011105255A1 (ja) * 2010-02-26 2011-09-01 株式会社Sumco 半導体ウェーハの製造方法
JP7023211B2 (ja) * 2018-10-23 2022-02-21 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 ポリッシュドシリコンウェーハのエッチング条件調整方法及びそれを用いたポリッシュドシリコンウェーハの製造方法
DE102018221922A1 (de) * 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4111011Y1 (enExample) 1964-10-20 1966-05-23
JPS63221967A (ja) * 1987-03-10 1988-09-14 Fujitsu Ltd 研磨加工後のリンス方法
JP2711389B2 (ja) 1987-08-28 1998-02-10 ユー，エス，フィルター／アローヘッド、インコーポレイテッド 集積回路製作方法
JPH02178919A (ja) * 1988-12-29 1990-07-11 Matsushita Electron Corp シリコン基板への不純物拡散方法
JP2830706B2 (ja) 1993-07-24 1998-12-02 信越半導体株式会社 シリコンウエーハのエッチング方法
JP3678505B2 (ja) 1995-08-29 2005-08-03 信越半導体株式会社 半導体ウェーハをエッチングするためのアルカリ溶液の純化方法及び半導体ウェーハのエッチング方法
JP3522475B2 (ja) * 1996-03-11 2004-04-26 三菱住友シリコン株式会社 シリコンウェーハ表面粗さ制御用のエッチャント
JPH09270396A (ja) 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
JP3658454B2 (ja) 1996-03-29 2005-06-08 コマツ電子金属株式会社 半導体ウェハの製造方法
JP3686910B2 (ja) 1997-09-29 2005-08-24 三菱住友シリコン株式会社 シリコンウェーハのエッチング方法
MY119304A (en) * 1997-12-11 2005-04-30 Shinetsu Handotai Kk Silicon wafer etching method and silicon wafer etchant
DE19953152C1 (de) 1999-11-04 2001-02-15 Wacker Siltronic Halbleitermat Verfahren zur naßchemischen Oberflächenbehandlung einer Halbleiterscheibe
JP3943869B2 (ja) 2000-06-29 2007-07-11 信越半導体株式会社 半導体ウエーハの加工方法および半導体ウエーハ
GB2368971B (en) 2000-11-11 2005-01-05 Pure Wafer Ltd Process for Reclaimimg Wafer Substrates
JP3413726B2 (ja) 2000-12-28 2003-06-09 株式会社スーパーシリコン研究所 ウエハ洗浄方法
JP2003007672A (ja) * 2001-06-25 2003-01-10 Toshiba Ceramics Co Ltd シリコン半導体ウェーハのエッチング方法
JP2003229392A (ja) * 2001-11-28 2003-08-15 Shin Etsu Handotai Co Ltd シリコンウエーハの製造方法及びシリコンウエーハ並びにｓｏｉウエーハ
JP3890981B2 (ja) * 2002-01-07 2007-03-07 株式会社Ｓｕｍｃｏ アルカリエッチング液及びこのエッチング液を用いたシリコンウェーハのエッチング方法並びにこの方法を用いたシリコンウェーハの表裏面差別化方法
WO2004027840A2 (en) 2002-09-18 2004-04-01 Memc Electronic Materials, Inc. Process for etching silicon wafers
JP4426192B2 (ja) 2003-02-14 2010-03-03 ニッタ・ハース株式会社 研磨用組成物の製造方法
EP1699075B1 (en) 2003-12-05 2012-11-21 SUMCO Corporation Method for manufacturing single-side mirror surface wafer
KR20050065312A (ko) * 2003-12-25 2005-06-29 마츠시타 덴끼 산교 가부시키가이샤 반도체웨이퍼의 세정방법
JP4517867B2 (ja) 2005-01-31 2010-08-04 株式会社Sumco シリコンウェーハ表面形状制御用エッチング液及び該エッチング液を用いたシリコンウェーハの製造方法

Also Published As

Publication number Publication date
EP1742256A4 (en) 2007-06-06
TW200539274A (en) 2005-12-01
EP1742256B1 (en) 2018-08-15
TWI292586B (enExample) 2008-01-11
EP1742256A1 (en) 2007-01-10
KR20060133082A (ko) 2006-12-22
WO2005098921A1 (ja) 2005-10-20
US7851375B2 (en) 2010-12-14
US20070298618A1 (en) 2007-12-27
KR100858774B1 (ko) 2008-09-16
JP2005294682A (ja) 2005-10-20

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