WO2005098921A1 - 半導体ウェーハの表面粗さ制御用アルカリエッチャント - Google Patents
半導体ウェーハの表面粗さ制御用アルカリエッチャント Download PDFInfo
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- WO2005098921A1 WO2005098921A1 PCT/JP2005/005527 JP2005005527W WO2005098921A1 WO 2005098921 A1 WO2005098921 A1 WO 2005098921A1 JP 2005005527 W JP2005005527 W JP 2005005527W WO 2005098921 A1 WO2005098921 A1 WO 2005098921A1
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- Prior art keywords
- weight
- sodium hydroxide
- wafer
- etchant
- solution
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 230000003746 surface roughness Effects 0.000 title claims abstract description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 186
- 239000007864 aqueous solution Substances 0.000 claims abstract description 38
- 239000000243 solution Substances 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 7
- 239000003513 alkali Substances 0.000 claims description 6
- 238000006386 neutralization reaction Methods 0.000 claims description 6
- 230000003472 neutralizing effect Effects 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 27
- 235000012431 wafers Nutrition 0.000 description 79
- 235000011121 sodium hydroxide Nutrition 0.000 description 56
- 230000000052 comparative effect Effects 0.000 description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000005498 polishing Methods 0.000 description 10
- 235000011118 potassium hydroxide Nutrition 0.000 description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- XGZRAKBCYZIBKP-UHFFFAOYSA-L disodium;dihydroxide Chemical compound [OH-].[OH-].[Na+].[Na+] XGZRAKBCYZIBKP-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Definitions
- the present invention relates to an etchant (etchant) for controlling the surface roughness of a semiconductor wafer, and more particularly, to an etchant capable of suppressing the deterioration of the global flatness of the semiconductor wafer and reducing the glossiness. About.
- an acid etchant or an alkali etchant is used as an etchant.
- the former uses a mixed acid of hydrofluoric acid (HF) and nitric acid (HNO).
- Recon Si is oxidized by this nitric acid to form SiO, and this SiO is dissolved by hydrofluoric acid.
- the latter etchant is an etchant obtained by diluting caustic potash (KOH) or caustic soda (NaOH) with water. By such chemical etching, the affected layer of silicon wafer is removed, the surface roughness is reduced, and a smooth surface is obtained.
- KOH caustic potash
- NaOH caustic soda
- the mirror surface of the mirror-finished silicon wafer is adjusted to its global flatness, for example, TTV (total thickness variation: wafer when the back surface of the wafer is fixed by suction). While maintaining the difference between the maximum and minimum surface height m, GBIR of SEMI standard, it was impossible to reduce the gloss uniformly.
- TTV total thickness variation: wafer when the back surface of the wafer is fixed by suction
- An object of the present invention is to provide a method for manufacturing an etchant and a semiconductor wafer that can suppress deterioration of global flatness and sufficiently reduce the glossiness of the wafer.
- an aqueous solution of sodium hydroxide having a weight concentration of 55% by weight to 70% by weight.
- An alkaline etchant for controlling the surface roughness of C is provided.
- sodium hydroxide having a temperature of 80 ° C to 90 ° C and a weight concentration of 55% to 70% by weight is used.
- One main surface of a semiconductor wafer whose both surfaces are mirror-polished is brought into contact with an aqueous solution or an aqueous sodium hydroxide solution having a temperature of 85 ° C to 90 ° C and a weight concentration of 55% to 60% by weight, and A method for manufacturing a semiconductor wafer having a step of etching a main surface is provided.
- the mirror surface of the wafer is etched using an alkaline etchant having an anisotropic etching characteristic in which the etching rate in the depth direction is higher than the horizontal direction, the etching rate is low, but the surface roughness is low. Therefore, the deterioration of the global flatness can be suppressed.
- the glossiness can be reduced by adjusting the weight concentration of sodium hydroxide or potassium hydroxide to 55% by weight to 70% by weight.
- FIG. 1 (A) is a process diagram showing a method for manufacturing a semiconductor wafer according to an embodiment of the present invention
- FIG. 1 (B) is a flow chart showing a method for manufacturing a semiconductor wafer according to another embodiment.
- FIG. 1 (A) is a process diagram showing a method for manufacturing a semiconductor wafer according to an embodiment of the present invention
- FIG. 1 (B) is a flow chart showing a method for manufacturing a semiconductor wafer according to another embodiment.
- FIG. 1 (B) is a flow chart showing a method for manufacturing a semiconductor wafer according to another embodiment.
- FIG. 2 is a graph showing whether front / back identification is possible for a combination of a weight concentration of an alkaline etchant and an etching (clouding) temperature.
- FIG. 3 is a graph showing the gloss (%) with respect to the weight concentration (% by weight) of the alkaline etchant.
- a method for manufacturing a semiconductor wafer according to the present embodiment will be described with reference to FIG. 1A.
- the silicon wafer is manufactured through the steps of etching (clouding or surface roughening), pure water cleaning, neutralization, pure water cleaning, drying, and inspection.
- etching clouding or surface roughening
- pure water cleaning neutralization
- pure water cleaning drying, and inspection.
- the silicon ingot pulled up by the CZ method is sliced into a silicon wafer having a thickness of about 860 ⁇ m, for example, 8 inches, in the slicing step of step S1.
- the silicon wafer after slicing has a peripheral edge portion of a grinding wheel Is chamfered into a predetermined shape.
- the peripheral portion of the silicon wafer is formed into a predetermined rounded shape (for example, a MOS type chamfered shape).
- the chamfered silicon wafer is wrapped in the lapping step of step S3.
- the silicon wafer is arranged between a pair of lapping plates parallel to each other, and then a lapping liquid, which is a mixture of alumina abrasive grains, a dispersant, and water, is poured between the lapping plates, and then under pressure.
- a lapping liquid which is a mixture of alumina abrasive grains, a dispersant, and water.
- step S4 the wrapped wafer after the lapping is etched. Specifically, by immersing the silicon wafer in a mixed acid solution (hydrogen acid and nitric acid mixed at 50 ° C) mixed with hydrofluoric acid and nitric acid, for example, etching is performed to about 20 m on one side and about 40 m on both sides. . Thereby, distortion in the lapping step, distortion in the chamfering step, and the like are removed.
- a mixed acid solution hydrogen acid and nitric acid mixed at 50 ° C
- etching is performed to about 20 m on one side and about 40 m on both sides.
- step S5 both surfaces of the silicon wafer are mirror-polished.
- This step is carried out using a polishing apparatus having a rotating upper polishing plate and a lower polishing plate which is disposed opposite thereto and which also rotates.
- a polishing cloth is attached to each, and both surfaces are simultaneously mirror-polished by pressing silicon wafers on the upper and lower polishing cloths.
- the polishing allowance at this time is, for example, 10 m.
- a predetermined slurry is supplied.
- step S6 only the back surface of the wafer having both mirror surfaces is etched to remove the silicon wafer.
- the alkaline etchant according to the present invention is used.
- the alkaline etchant according to the present embodiment is for facilitating the visual identification of the front and back surfaces by lowering the glossiness of the back surface of the wafer, and does not deteriorate the global flatness of the back surface. Is characterized in that
- the alkaline etchant according to the present embodiment is an aqueous solution containing sodium hydroxide as a main component and having a weight concentration (molarity) of 55% by weight (22.3 mol / L). ) — 70% by weight (31.3 mol / L) aqueous solution can be selected. If the weight concentration of sodium hydroxide is less than 55% by weight, the etching proceeds but the gloss is low. No bottom can be seen and the front and back sides cannot be visually identified. An etchant having a weight concentration of sodium hydroxide greater than 70% by weight will not dissolve unless the temperature of the etchant is raised to about 100 ° C., and is therefore unsuitable as an etching temperature.
- the temperature of the etchant is set to 80 ° C. to 90 ° C. in the etching step of step S6.
- the back surface of the wafer to be fogged is etched, for example, by 20 to 30 ⁇ m.
- an aqueous solution of potassium hydroxide may be used instead of the aqueous solution of sodium hydroxide as an etchant.
- a potassium hydroxide aqueous solution the same as the sodium hydroxide aqueous solution can be obtained by using a potassium hydroxide aqueous solution having a molarity in the same range as that of the sodium hydroxide aqueous solution described above. An etching effect is obtained.
- potassium hydroxide has a larger molecular weight, so that the absolute value of the weight concentration range is also larger, and the aqueous sodium hydroxide is used. Becomes difficult. Therefore, it is more preferable to employ an aqueous solution of sodium hydroxide as an alkaline etchant because of its ease of preparation into an aqueous solution.
- the wafer is washed by immersing in pure water or spraying with pure water (pure water washing in step S7), and neutralization treatment for neutralizing the alkaline etching solution remaining in the wafer. Is performed (step S8).
- this neutralization treatment for example, the wafer is immersed in a hydrofluoric acid aqueous solution having a weight concentration of 10% by weight or less at room temperature for 5 minutes.
- ozone added to the hydrofluoric acid aqueous solution, an oxide film is formed on the surface of the wafer. As a result, the silicon wafer surface is not exposed, so that contamination by metal impurities and adhesion of particles can be prevented.
- the wafer to which the hydrofluoric acid aqueous solution has adhered is washed by immersing in pure water or spraying with pure water (pure water washing in step S9), and then, for example, at a rotational speed of 1500 rpm for 120 minutes.
- the wafer is dried by spin drying for 2 seconds (step S10).
- step S11 an inspection of the wafer flatness is performed in step S11.
- a flatness measuring device having a capacitance type distance sensor is used for this inspection.
- a wafer with a BIR (TTV) of 1.5 / zm or less is considered to be a good flatness product.
- step S8 the force of adding ozone to the hydrofluoric acid aqueous solution in step S8 in order to form an oxide film on the surface of the wafer is the same as step S8 ⁇ in FIG. 1 (B).
- a hydrofluoric acid aqueous solution to which no ozone was added was used, and instead of this, in step S1 (immediately before spin drying of T, for example, an ozone aqueous solution of lOppm or more was sprayed onto the wafer. Good.
- a 99% pure sodium hydroxide aqueous flake was added to the aqueous solution, and an alkali solution consisting of a 70% by weight aqueous sodium hydroxide solution was added.
- An etchant was prepared.
- One side of the double-sided mirror-polished silicon wafer after each of the steps S1 to S5 shown in Fig. 1 was immersed in the alkaline etchant maintained at 90 ° C, and the etching depth (gap) was 30 m. It was immersed until it became.
- Step S8 a solution obtained by adding 10 ppm by weight of ozone to a hydrofluoric acid aqueous solution having a weight concentration of 10% by weight was treated at room temperature for 5 minutes.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 85 ° C, 99% pure sodium hydroxide aqueous flakes were added to the aqueous solution to obtain a 70% by weight sodium chloride aqueous solution.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 80 ° C., 99% pure sodium hydroxide aqueous flakes were added to the aqueous solution to obtain a 70% by weight sodium hydroxide aqueous solution. Same conditions as in Example 1 except that an alkaline etchant consisting of sodium hydroxide aqueous solution was prepared. Processed the e-ha.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 90 ° C., 99% pure sodium hydroxide aqueous flakes were added thereto, and the weight concentration was 60% by weight.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 85 ° C., 99% pure sodium hydroxide aqueous flakes were added thereto, and the weight concentration of the aqueous sodium hydroxide solution was 60% by weight.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 80 ° C., 99% pure sodium hydroxide aqueous flakes were added to the aqueous solution, and the weight concentration of the aqueous solution was 60% by weight.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 while maintaining a 51% by weight sodium hydroxide aqueous solution at 90 ° C., 99% pure sodium hydroxide sodium flakes were added thereto, and the weight concentration was 55% by weight.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 while maintaining a 51% by weight aqueous sodium hydroxide solution at 85 ° C., a 99% pure sodium hydroxide aqueous flake was added thereto, and the weight concentration was 55% by weight.
- the wafer was treated under the same conditions as in Example 1 except that an alkaline etchant consisting of an aqueous sodium hydroxide solution was prepared.
- Example 1 an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution
- the wafers were treated under the same conditions as in Example 1 except that fogging was performed using this while maintaining the temperature at 90 ° C.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a fogging process was performed using an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution while maintaining the temperature at 85 ° C. Processed.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a 50% by weight aqueous sodium hydroxide solution was used as the alkaline etchant and the fogging process was performed while maintaining the temperature at 80 ° C. Processed.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a 40% by weight aqueous sodium hydroxide solution was used as an alkali etchant, while maintaining the temperature at 90 ° C. to carry out fogging. Processed.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a fogging process was performed using an alkaline etchant having a 40% by weight sodium hydroxide aqueous solution strength at 85 ° C while maintaining the same. Processed.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a fogging process was performed using an alkaline etchant having a 40% by weight aqueous sodium hydroxide solution while maintaining the temperature at 80 ° C. Processed.
- Example 1 a wafer was prepared under the same conditions as in Example 1 except that a fogging process was performed using an alkaline etchant having a 55% by weight aqueous sodium hydroxide solution while maintaining the temperature at 80 ° C. Processed.
- the fogging process was performed.
- the gloss before and after the fogging process were measured with a gloss meter (manufactured by Nippon Denshoku Co., Ltd.) at a gloss of 60 °, and the reduction rate (%) was also calculated.
- the front and back surfaces of these wafers were visually observed, and whether the front and back surfaces could be distinguished was visually evaluated.
- An unidentifiable wafer is designated as “ ⁇ ”, and an unidentifiable wafer is designated as “X”.
- FIG. 2 and FIG. Figure 2 is a graph showing the possibility of discrimination of front and back with respect to the combination of the weight concentration of alkali etchant and the etching (fogging) temperature. Show possible points. Also, the hatched area in the figure shows the identifiable range.
- FIG. 3 is a graph showing the gloss (%) with respect to the weight concentration (% by weight) of the alkaline etchant.
- Example 1 70 90 81 0 Example 2 70 85 70 ⁇ Example 3 70 80 55 0 Example 4 60 90 70 0 Example 5 60 85 55 0 Example 6 60 80 40 ⁇ Example 7 55 90 50 o Example 8 55 85 40 0 Comparative Example 1 50 90 15 X Comparative Example 2 50 85 5 X Comparative Example 3 50 80 0 X Comparative Example 4 40 90 0 X Comparative Example 5 40 85 0 X Comparative Example 6 40 80 0 X Comparative Example 7 55 60 31 X [0042] From the results of Examples 18 and 17 and Comparative Examples 17 and 17, it is necessary to reduce the glossiness by at least about 40% in order to visually identify the front and back of the mirror-polished wafer.
- the weight concentration of the alkaline etchant was set at 60% by weight to 70% by weight and the etching temperature was set at 80 ° C to 90 ° C, the front and back of the mirror-polished wafer could be visually identified. Also, when the weight concentration of the alkaline etchant was 55% by weight, if the etching temperature was 85 ° C-90 ° C, it was also confirmed that the front and back of mirror-polished wafer could be visually identified. . As a result, when the weight concentration of the alkaline etchant is 55-60% by weight, as shown in Fig. 2, the etching temperature is in the range of 80-85 ° C and the slope has a negative linear function. It is presumed that it becomes.
- a 99% pure sodium hydroxide aqueous flake was added thereto, and an alkali ethanol consisting of a 70% by weight aqueous sodium hydroxide solution was added.
- a chant was prepared.
- One side of the double-sided mirror-polished silicon wafer after each of the steps S1 to S5 shown in Fig. 1 was immersed in the alkaline etchant maintained at 80 ° C, and the etching depth (gap) was 10 m. It was immersed until it became.
- each wafer whose one surface was clouded was washed with pure water, neutralized, washed with pure water and dried in each step of steps S7 to S10 shown in FIG.
- a neutralizing agent in Step S8 a solution obtained by adding 10 ppm of ozone to a hydrofluoric acid aqueous solution having a weight concentration of 10% by weight was used, and the mixture was treated at room temperature for 5 minutes.
- Example 9 the wafer was processed under the same conditions as in Example 9 except that the etching depth by the alkaline etchant was set to 20 m.
- Example 9 the wafer was processed under the same conditions as in Example 9 except that the etching depth by the alkaline etchant was changed to 30 m.
- Example 9 the wafer was processed under the same conditions as in Example 9 except that the etching depth by the alkaline etchant was set to 40 m.
- Comparative Example 8 >>
- the wafer was treated under the same conditions as in Example 9 except that an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution was used.
- Example 10 The wafer was treated under the same conditions as in Example 10 except that an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution was used in Example 10.
- Example 11 the wafer was treated under the same conditions as in Example 11, except that an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution was used.
- Example 12 The wafer was treated under the same conditions as in Example 12 except that an alkaline etchant having a 50% by weight aqueous sodium hydroxide solution was used in Example 12.
- the global flatness GBIR (TTV) of the wafer before etching (clouding) and the GBIR after etching were each measured, and the rate of change was also calculated.
- Flatness GBIR was measured using a thickness / flatness measuring device (made by ADI Japan) with a capacitance type distance sensor.
- the site flatness SFQR and nanotopography were also measured. The results are shown in Table 2.
- Example 9 10 0.65 0.70 0.05 0.5 0.065 15
- Example 10 20 0.70 1.00 0.30 1.5 0.150
- Example 11 30 0.60 1.50 0.90 3.0 0.205> 100
- Example 12 40 0.75 2.00 1.25 3.1 0.350> 100
- Comparative example 8 10 0.60 0.95 0.35 3.5 0.175 50
- Comparative Example 9 20 0.55 1.20 0.65 3.3 0.355> 100
- Comparative Example 10 30 0.70 1.90 1.20 4.0 0.575> 100 Comparative Example 11 40 0.80 2.50 1.70 4.3 0.700 ⁇ 100
- Example 9-12 if the weight concentration of the alkaline etchant is set to 70% by weight, the global flatness can be obtained even if the etching depth is 30-40 ⁇ m. It was confirmed that the rate of change of BGIR can be suppressed to around 3%. In addition, it was confirmed that Examples 9-12 also exhibited better values for the site flatness SFQR and nanotopography than Comparative Examples 8-11.
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Abstract
Description
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/599,576 US7851375B2 (en) | 2004-04-02 | 2005-03-25 | Alkaline etchant for controlling surface roughness of semiconductor wafer |
EP05726977.1A EP1742256B1 (en) | 2004-04-02 | 2005-03-25 | Alkaline etchant for controlling surface roughness of semiconductor wafer |
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Application Number | Priority Date | Filing Date | Title |
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JP2004-109870 | 2004-04-02 | ||
JP2004109870A JP4424039B2 (ja) | 2004-04-02 | 2004-04-02 | 半導体ウェーハの製造方法 |
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US (1) | US7851375B2 (ja) |
EP (1) | EP1742256B1 (ja) |
JP (1) | JP4424039B2 (ja) |
KR (1) | KR100858774B1 (ja) |
TW (1) | TW200539274A (ja) |
WO (1) | WO2005098921A1 (ja) |
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Also Published As
Publication number | Publication date |
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EP1742256A4 (en) | 2007-06-06 |
EP1742256B1 (en) | 2018-08-15 |
JP2005294682A (ja) | 2005-10-20 |
US7851375B2 (en) | 2010-12-14 |
JP4424039B2 (ja) | 2010-03-03 |
TWI292586B (ja) | 2008-01-11 |
US20070298618A1 (en) | 2007-12-27 |
EP1742256A1 (en) | 2007-01-10 |
KR20060133082A (ko) | 2006-12-22 |
TW200539274A (en) | 2005-12-01 |
KR100858774B1 (ko) | 2008-09-16 |
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