JP4421710B2 - 新規なポリマー及びそれらを含有してなるフォトレジスト組成物 - Google Patents

新規なポリマー及びそれらを含有してなるフォトレジスト組成物 Download PDF

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Publication number
JP4421710B2
JP4421710B2 JP28327199A JP28327199A JP4421710B2 JP 4421710 B2 JP4421710 B2 JP 4421710B2 JP 28327199 A JP28327199 A JP 28327199A JP 28327199 A JP28327199 A JP 28327199A JP 4421710 B2 JP4421710 B2 JP 4421710B2
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JP
Japan
Prior art keywords
photoresist
photoresist composition
polymer
group
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP28327199A
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English (en)
Japanese (ja)
Other versions
JP2000298347A5 (enExample
JP2000298347A (ja
Inventor
ピーター・トレフォナス・サード
ゲイリー・エヌ・テイラー
ジョージ・ジー・バークレー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2000298347A publication Critical patent/JP2000298347A/ja
Publication of JP2000298347A5 publication Critical patent/JP2000298347A5/ja
Application granted granted Critical
Publication of JP4421710B2 publication Critical patent/JP4421710B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP28327199A 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物 Expired - Lifetime JP4421710B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US143462 1988-01-13
US09/143,462 US6136501A (en) 1998-08-28 1998-08-28 Polymers and photoresist compositions comprising same

Publications (3)

Publication Number Publication Date
JP2000298347A JP2000298347A (ja) 2000-10-24
JP2000298347A5 JP2000298347A5 (enExample) 2006-10-12
JP4421710B2 true JP4421710B2 (ja) 2010-02-24

Family

ID=22504190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28327199A Expired - Lifetime JP4421710B2 (ja) 1998-08-28 1999-08-30 新規なポリマー及びそれらを含有してなるフォトレジスト組成物

Country Status (3)

Country Link
US (1) US6136501A (enExample)
JP (1) JP4421710B2 (enExample)
KR (1) KR100735889B1 (enExample)

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US7022455B2 (en) * 2001-12-28 2006-04-04 Shipley Company, L.L.C. Photoacid-labile polymers and photoresists comprising same
US6767688B2 (en) * 2001-12-31 2004-07-27 Shipley Company, L.L.C. Photoresist compositions
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IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
US9851639B2 (en) 2012-03-31 2017-12-26 International Business Machines Corporation Photoacid generating polymers containing a urethane linkage for lithography
US9136123B2 (en) 2013-01-19 2015-09-15 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
US9171720B2 (en) 2013-01-19 2015-10-27 Rohm And Haas Electronic Materials Llc Hardmask surface treatment
KR102248827B1 (ko) 2013-05-20 2021-05-07 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 산 발생체 및 화합물
JP6421449B2 (ja) 2013-05-20 2018-11-14 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、酸発生体及び化合物
WO2014188762A1 (ja) 2013-05-24 2014-11-27 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、酸拡散制御剤、化合物及び化合物の製造方法
KR20170059992A (ko) 2014-09-17 2017-05-31 제이에스알 가부시끼가이샤 패턴 형성 방법
JP6572899B2 (ja) 2014-09-17 2019-09-11 Jsr株式会社 パターン形成方法
JP6646990B2 (ja) * 2014-10-02 2020-02-14 東京応化工業株式会社 レジストパターン形成方法
US9244345B1 (en) 2014-11-06 2016-01-26 International Business Machines Corporation Non-ionic photo-acid generating polymers for resist applications
CN106094431B (zh) 2015-04-30 2020-06-26 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
JP6886113B2 (ja) 2015-12-01 2021-06-16 Jsr株式会社 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤
US10113024B2 (en) 2015-12-21 2018-10-30 Dow Global Technologies Llc Arylcyclobutenes
US10120277B2 (en) 2016-02-19 2018-11-06 Jsr Corporation Radiation-sensitive composition and pattern-forming method
KR20170098173A (ko) 2016-02-19 2017-08-29 제이에스알 가부시끼가이샤 감방사선성 조성물 및 패턴 형성 방법
KR102341492B1 (ko) 2016-03-03 2021-12-22 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 감방사선성 산 발생제 및 화합물
WO2018043506A1 (ja) 2016-08-29 2018-03-08 Jsr株式会社 感放射線性組成物及びパターン形成方法
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WO2018123537A1 (ja) 2016-12-28 2018-07-05 Jsr株式会社 感放射線性組成物、パターン形成方法及び金属酸化物
KR20190099428A (ko) 2016-12-28 2019-08-27 제이에스알 가부시끼가이샤 감방사선성 조성물, 패턴 형성 방법 그리고 금속 함유 수지 및 그의 제조 방법
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
KR20190103229A (ko) 2017-01-26 2019-09-04 제이에스알 가부시끼가이샤 감방사선성 조성물 및 패턴 형성 방법
JPWO2018168221A1 (ja) 2017-03-13 2020-01-16 Jsr株式会社 感放射線性組成物及びパターン形成方法
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Also Published As

Publication number Publication date
KR20000016921A (ko) 2000-03-25
US6136501A (en) 2000-10-24
JP2000298347A (ja) 2000-10-24
KR100735889B1 (ko) 2007-07-06

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