JP4397062B2 - 電圧発生回路および半導体記憶装置 - Google Patents

電圧発生回路および半導体記憶装置 Download PDF

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Publication number
JP4397062B2
JP4397062B2 JP33767798A JP33767798A JP4397062B2 JP 4397062 B2 JP4397062 B2 JP 4397062B2 JP 33767798 A JP33767798 A JP 33767798A JP 33767798 A JP33767798 A JP 33767798A JP 4397062 B2 JP4397062 B2 JP 4397062B2
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Japan
Prior art keywords
voltage
output
wiring
generation circuit
power supply
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Expired - Fee Related
Application number
JP33767798A
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English (en)
Japanese (ja)
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JP2000163964A5 (https=
JP2000163964A (ja
Inventor
玄 森下
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Renesas Technology Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP33767798A priority Critical patent/JP4397062B2/ja
Priority to US09/321,884 priority patent/US6246280B1/en
Publication of JP2000163964A publication Critical patent/JP2000163964A/ja
Priority to US09/843,691 priority patent/US6385117B2/en
Publication of JP2000163964A5 publication Critical patent/JP2000163964A5/ja
Application granted granted Critical
Publication of JP4397062B2 publication Critical patent/JP4397062B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0083—Converters characterised by their input or output configuration
    • H02M1/009—Converters characterised by their input or output configuration having two or more independently controlled outputs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/071—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Dc-Dc Converters (AREA)
JP33767798A 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置 Expired - Fee Related JP4397062B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33767798A JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置
US09/321,884 US6246280B1 (en) 1998-11-27 1999-05-28 Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same
US09/843,691 US6385117B2 (en) 1998-11-27 2001-04-30 Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33767798A JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2000163964A JP2000163964A (ja) 2000-06-16
JP2000163964A5 JP2000163964A5 (https=) 2006-01-12
JP4397062B2 true JP4397062B2 (ja) 2010-01-13

Family

ID=18310927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33767798A Expired - Fee Related JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置

Country Status (2)

Country Link
US (2) US6246280B1 (https=)
JP (1) JP4397062B2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4576736B2 (ja) * 2001-03-28 2010-11-10 セイコーエプソン株式会社 電源回路、表示装置および電子機器
US7336121B2 (en) * 2001-05-04 2008-02-26 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
US6891426B2 (en) * 2001-10-19 2005-05-10 Intel Corporation Circuit for providing multiple voltage signals
JP3874247B2 (ja) * 2001-12-25 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
US6784722B2 (en) * 2002-10-09 2004-08-31 Intel Corporation Wide-range local bias generator for body bias grid
CN1307720C (zh) * 2003-06-27 2007-03-28 富士通株式会社 半导体集成电路
KR100572323B1 (ko) * 2003-12-11 2006-04-19 삼성전자주식회사 멀티레벨 고전압 발생장치
US7026843B1 (en) * 2004-01-16 2006-04-11 Spansion Llc Flexible cascode amplifier circuit with high gain for flash memory cells
JP4965069B2 (ja) * 2004-10-21 2012-07-04 ラピスセミコンダクタ株式会社 半導体集積回路
US8390146B2 (en) * 2008-02-27 2013-03-05 Panasonic Corporation Semiconductor integrated circuit and various devices provided with the same
KR100956776B1 (ko) 2008-04-18 2010-05-12 주식회사 하이닉스반도체 네거티브 전압 생성 장치
US7733126B1 (en) * 2009-03-31 2010-06-08 Freescale Semiconductor, Inc. Negative voltage generation
KR101131945B1 (ko) * 2010-07-07 2012-03-29 주식회사 하이닉스반도체 비휘발성 메모리 장치
KR101809105B1 (ko) * 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
JP5866964B2 (ja) * 2011-10-25 2016-02-24 富士通株式会社 制御回路及びそれを用いた電子機器
US8830776B1 (en) * 2013-03-15 2014-09-09 Freescale Semiconductor, Inc. Negative charge pump regulation
JP2015170379A (ja) * 2014-03-10 2015-09-28 マイクロン テクノロジー， インク． 半導体装置
US10826388B2 (en) 2018-12-11 2020-11-03 Texas Instruments Incorporated Charge pump circuits
US12205663B2 (en) * 2019-07-09 2025-01-21 Arm Limited Regulated negative charge pump circuitry and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3569310B2 (ja) * 1993-10-14 2004-09-22 株式会社ルネサステクノロジ 半導体記憶装置
US5614815A (en) * 1994-03-10 1997-03-25 Fujitsu Limited Constant voltage supplying circuit
KR0145758B1 (ko) * 1994-08-24 1998-08-01 김주용 반도체 소자의 전압 조정 회로
FR2735921B1 (fr) * 1995-06-21 1997-08-22 Sgs Thomson Microelectronics Circuit generateur de phases pour circuit d'alimentation negative du type pompe de charge
FR2735922B1 (fr) * 1995-06-21 1997-08-22 Sgs Thomson Microelectronics Circuit generateur de tension negative du type pompe de charge
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
KR100293455B1 (ko) * 1998-08-31 2001-07-12 김영환 반도체메모리소자의전압공급장치

Also Published As

Publication number Publication date
JP2000163964A (ja) 2000-06-16
US6246280B1 (en) 2001-06-12
US6385117B2 (en) 2002-05-07
US20010017812A1 (en) 2001-08-30

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